Raman spectroscopy and x-ray diffraction studies of (Ti,Al)N films deposited by filtered cathodic vacuum arc at room temperature

2001 ◽  
Vol 89 (11) ◽  
pp. 6192-6197 ◽  
Author(s):  
Y. H. Cheng ◽  
B. K. Tay ◽  
S. P. Lau ◽  
X. Shi
Keyword(s):  
Raman Spectroscopy ◽  
Room Temperature ◽  
Vacuum Arc ◽  
X Ray Diffraction ◽  
X Ray ◽  
Filtered Cathodic Vacuum Arc

SURFACE METALIZATION ON THE PHOTO-EMISSION, PHOTO-ABSORPTION AND CORE-LEVEL SHIFT OF NANOSOLID SILICON

2009 ◽  
Vol 16 (02) ◽  
pp. 265-270 ◽  
Author(s):  
LIKUN PAN ◽  
HAIBO LI ◽  
ZHUO SUN ◽  
CHANGQING SUN
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Vacuum Arc ◽  
Level Shift ◽  
Field Variation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Filtered Cathodic Vacuum Arc ◽  
Si Wafer ◽  
Ti Films

Cu , Al , and Ti films of ~ 10 nm thickness were deposited on porous silicon (PS) at room temperature using Filtered Cathodic Vacuum Arc system and annealed at 800°C for 10 min in vacuum. The PS layers were obtained by anodization of Si wafer. X-ray photoelectron spectroscopy, photoluminescence (PL), photo-absorption (PA), and X-ray diffraction studies revealed that before annealing just Cu -deposited sample exhibited PL blueshift, PA redshift, and Si -2p level shift due to the Cu diffusion at the surface of PS. While after annealing, Cu - and Ti -deposited samples exhibited obvious PA redshift and Si -2p level shift, which arise from the crystal field variation due to the formation of Cu / Ti silicides at the surface as well as the conduction electronic transportation.

Dielectric Properties and Raman Spectroscopy in Ca-Substituted Na0.5Bi0.5TiO3 Ferroelectric Ceramics

2011 ◽  
Vol 324 ◽  
pp. 298-301 ◽  
Author(s):  
Roy Jean Roukos ◽  
Olivier Bidault ◽  
Julien Pansiot ◽  
Ludivine Minier ◽  
Lucien Saviot
Keyword(s):  
Raman Spectroscopy ◽  
Dielectric Properties ◽  
Room Temperature ◽  
Rhombohedral Phase ◽  
Xrd Analysis ◽  
Solid State Reaction Method ◽  
Ferroelectric Ceramics ◽  
Dielectric Measurements ◽  
X Ray Diffraction ◽  
X Ray

Lead free Na0.5Bi0.5TiO3 (NBT) and (Na0.5Bi0.5TiO3)1-x(CaTiO3)x (NBT-CT) piezoelectric ceramics with the perovskite structure were studied. The NBT and NBT-CT samples were synthesized using a solid-state reaction method and characterized with X-ray diffraction (XRD), Raman spectroscopy and dielectric measurements for several compositions (x = 0, 0.07, 0.15) at room temperature. The XRD analysis showed a stabilization of a rhombohedral phase at a low concentration of Ca (0 < x <0.15), whereas Raman spectra reveal a strong modification for the sample with x = 0.15. The dielectric properties of these ceramics were studied by measuring impedance in the 79-451K temperature range for unpoled and field cooling with an electric field (FC) conditions.

Intercalation of Acceptors and Donors in Highly Ordered Graphite Fibers

1982 ◽  
Vol 20 ◽  
Author(s):  
T.C. Chieu ◽  
G. Timp ◽  
M.S. Dresselhaus
Keyword(s):  
Raman Spectroscopy ◽  
Room Temperature ◽  
Skin Depth ◽  
X Ray Diffraction ◽  
Repeat Distance ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Order Of Magnitude ◽  
Graphite Fibers

ABSTRACTThe intercalation of various acceptors and donors into graphite fibers, prepared from benzene-derived precursor materials is investigated by Raman spectroscopy, x-ray diffraction, electron diffraction, lattice fringing, and electrical resistivity measurements. Evidence for formation of well-staged acceptor compounds is provided by Debye-Scherrer x-ray diffraction which probes the bulk fiber and by Raman spectroscopy which probes an optical skin depth (< 0.1 μm). Lattice fringing measurements provide direct observation of large regions (up to 50 Aring; × 400 Aring;) of defectfree single-staged regions. Values for the c-axis repeat distance Ic are obtained by indexing (00l) lines of the x-ray diffraction pattern. Raman results show characteristic upshifted modes for stage 1 acceptor compounds with a sharpening in linewidth as compared to the E2g2 mode of the pristine fiber. The room temperature electrical conductivity is increased about an order of magnitude upon intercalation and exhibits a metallic dependence on temperature. The highest air-stable room temperature conductivity 1.4 × 105 (Ω-cm)−l ever reported for an intercalated fiber has been achieved.

scholarly journals Origin of Ultraviolet Luminescence from Bulk ZnO Thin Films Grown by Molecular Beam Epitaxy

2011 ◽  
Vol 1 ◽  
pp. 135-139 ◽  
Author(s):  
M. Asghar ◽  
Khalid Mahmood ◽  
Adnan Ali ◽  
M.A. Hasan ◽  
I. Hussain ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Energy Dispersive ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Uv Luminescence

Origin of ultraviolet (UV) luminescence from bulk ZnO has been investigated with the help of photoluminescence (PL) measurements. Thin films of ZnO having 52%, 53% and 54% of Zn-contents were prepared by means of molecular beam epitaxy (MBE). We observed a dominant UV line at 3.28 eV and a visible line centered at 2.5 eV in the PL spectrum performed at room temperature. The intensity of UV line has been found to depend upon the Zn percentage in the ZnO layers. Thereby, we correlate the UV line in our samples with the Zn-interstitials-bound exciton (Zni-X) recombination. The results obtained from, x-ray diffraction, the energy dispersive X-ray spectrum (EDAX) and Raman spectroscopy supported the PL results.

scholarly journals [HMIM][Br9]: a Room-temperature Ionic Liquid Based on a Polybromide Anion

2013 ◽  
Vol 68 (10) ◽  
pp. 1103-1107 ◽  
Author(s):  
Heike Haller ◽  
Michael Hog ◽  
Franziska Scholz ◽  
Harald Scherer ◽  
Ingo Krossing ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Raman Spectroscopy ◽  
Ionic Liquid ◽  
Nmr Spectroscopy ◽  
Single Crystal ◽  
Room Temperature ◽  
High Electrical Conductivity ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
X Ray

[HMIM][Br9] ([HMIM]=1-hexyl-3-methylimidazolium) has been investigated by Raman spectroscopy, single-crystal X-ray diffraction and NMR spectroscopy. Conductivity measurements show a high electrical conductivity like other polybromides.

scholarly journals Thermal Annealing and Phase Transformation of Serpentine-Like Garnierite

Minerals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 188
Author(s):  
Arun Kumar ◽  
Michele Cassetta ◽  
Marco Giarola ◽  
Marco Zanatta ◽  
Monique Le Guen ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Raman Spectroscopy ◽  
Phase Transformation ◽  
Differential Thermal Analysis ◽  
Thermal Treatment ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
Thermally Induced ◽  
X Ray ◽  
Micro Raman Spectroscopy

This study is focused on the vibrational and microstructural aspects of the thermally induced transformation of serpentine-like garnierite into quartz, forsterite, and enstatite occurring at about 620 °C. Powder specimens of garnierite were annealed in static air between room temperature and 1000 °C. The kinetic of the transformation was investigated by means of thermogravimetric and differential thermal analysis, and the final product was extensively characterized via micro-Raman spectroscopy and X-ray diffraction. Our study shows that serpentine-like garnierite consists of a mixture of different mineral species. Furthermore, these garnierites and their composition can provide details based on the mineralogy and the crystalline phases resulting from the thermal treatment.

Characteristics of titanium nitride films grown by pulsed laser deposition

1996 ◽  
Vol 11 (6) ◽  
pp. 1458-1469 ◽  
Author(s):  
R. Chowdhury ◽  
R. D. Vispute ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Titanium Nitride ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
X Ray Diffraction ◽  
Tin Films ◽  
X Ray ◽  
Transmission Electron

Laser physical vapor deposition (LPVD) has been used to grow titanium nitride films on hydrogen-terminated silicon(100) substrates at deposition temperatures ranging from room temperature to 600 °C. A pulsed KrF excimer laser (λ = 248 nm, τ = 25 ns) was used with the deposition chamber maintained at a base pressure of 10−7 Torr prior to deposition. Different properties of the films were investigated by x-ray diffraction, Auger electron spectroscopy, Raman spectroscopy, optical, scanning, and high resolution transmission electron microscopy, and measurement of electrical resistivity. When the substrate temperature was low (at and below 500 °C), oxygen atoms from the residual gases were incorporated in the films. The microstructures and resistivities of TiN films were found to be strongly dependent on the temperature of the silicon substrates. The TiN films deposited at 600 °C were oxygen-free, as observed from Auger analysis, and the room temperature resistivity was found to be 14–15 μΩ-cm. Raman spectroscopy of the films showed that the nitrogen-related optical phonon peak increased with deposition temperature in comparison with the titanium-related acoustic peak. Transmission electron microscopy and x-ray diffraction analyses showed that the films were polycrystalline at low temperature with grain size ranging from 300–600 Å, depending on the temperature of the substrate. At 600 °C, the films were found to be single crystals with occasional presence of dislocation loops. The spacing of Moiré fringes in TiN/Si samples deposited at 600 °C established the nearly periodic elastic strain field extending into the TiN and Si at the interface. Although there exists a large misfit between TiN and Si (24.6%), the epitaxial growth of TiN films on Si(100) substrates was explained by means of domain-matched epitaxy with a 4-to-3 match in unit cells for TiN/Si structure, giving rise to a residual lattice misfit of only 4%.

NANOCOMPOSITE nc-TiC/a-C:H FILMS FABRICATED BY DUAL PLASMA TECHNIQUE

2007 ◽  
Vol 14 (05) ◽  
pp. 891-897
Author(s):  
YAOHUI WANG ◽  
XU ZHANG ◽  
YUANZHI XU ◽  
XIANYING WU ◽  
HUIXING ZHANG ◽  
...  
Keyword(s):  
Flow Rate ◽  
Photoelectron Spectroscopy ◽  
Mechanical Tests ◽  
Vacuum Arc ◽  
X Ray Diffraction ◽  
Coil Current ◽  
X Ray ◽  
Mechanical And Tribological Properties ◽  
Nanocrystalline Graphite ◽  
Filtered Cathodic Vacuum Arc

Nanocomposite nc-TiC / a-C : H films have been deposited via filtered cathodic vacuum arc technique, employing Ti target and C 2 H 2 gas as material precursors. The composition and nanostructure of film, correlated to mechanical and tribological properties of film, are varied by changing C 2 H 2 flow rate and filter coil current. Glancing angle X-ray diffraction has been used to show that salient TiC (111) peak exists in film with grain size of order of 8–10 nm, as a function of filter coil current. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) investigations demonstrate that the nc-TiC / a-C : H films mainly contain nanocrystalline graphite and sp2-bonded carbon, both as a function of C 2 H 2 flow rate. Mechanical tests confirm that the nc-TiC / a-C : H films possess superior hardness of 33.9 GPa and elastic modulus of 237.6 GPa.

Baddeleyite Type Monoclinic Zirconium Oxide Nanocrystals Formation

2015 ◽  
Vol 1102 ◽  
pp. 79-82
Author(s):  
R. Yuvakkumar ◽  
Sun Ig Hong
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Zirconium Oxide ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Product Mixture ◽  
Transmission Electron ◽  
Nanocrystal Formation

We report successful synthesis of baddeleyite type monoclinic zirconium oxide nanocrystals formation. The product mixture of zirconium incubated at room temperature for 7 days were thoroughly investigated employing X-ray diffraction, Raman spectroscopy and transmission electron microscopy studies. XRD and Raman studies revealed the formation of baddeleyite type monoclinic zirconium oxide nanocrystals. TEM studies revealed the nanocrystal formation with size ranging from 100 nm to 200 nm.

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