Filtered Cathodic Arc Deposited Diamond-Like Carbon: Electron Spin Resonance (ESR) and Raman Spectroscopy

1999 ◽  
Vol 593 ◽  
Author(s):  
B. Druz ◽  
I. Zaritskiy ◽  
Y. Yevtukhov ◽  
A. Konchits ◽  
M. Valakh ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electron Spin Resonance ◽  
Ion Beam ◽  
Vacuum Arc ◽  
Diamond Like Carbon ◽  
Si Substrates ◽  
Spin Resonance ◽  
Filtered Cathodic Vacuum Arc ◽  
Cathodic Arc ◽  
Deposited Films

ABSTRACTTetrahedral diamond like carbon (ta-C) films were deposited onto Si substrates using Filtered Cathodic Vacuum Arc (FCVA) process. Stress of deposited films was varied in the range 3.5÷8.5 GPa. The ESR (stationary and pulse) and Raman techniques were used to analyze sp2 related defects in the pseudo-gap of undoped, as deposited 20 – 100 nm thick films. The results are compared with data for direct ion beam deposited from CH4 plasma hydrogenated DLHC films and nature of paramagnetic defects in DLC is discussed.

Diamond-like carbon films: electron spin resonance (ESR) and Raman spectroscopy

2004 ◽  
Vol 13 (9) ◽  
pp. 1592-1602 ◽  
Author(s):  
B Druz ◽  
I Zaritskiy ◽  
Y Yevtukhov ◽  
A Konchits ◽  
M Valakh ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Spin Resonance

Diamond-Like Carbon Thin Films with Extremely High Compressive Stress (>8~12GPa) for Advanced CMOS Strain Engineering

2012 ◽  
Vol 1427 ◽  
Author(s):  
Xiaolong Ma ◽  
Huaxiang Yin ◽  
Zuozhen Fu ◽  
Haiqiang Zhang ◽  
Xu Zhang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Compressive Stress ◽  
Cmos Technology ◽  
Strain Engineering ◽  
Intrinsic Stress ◽  
Vacuum Arc ◽  
Diamond Like Carbon ◽  
Multi Wavelength ◽  
Uv Raman ◽  
Filtered Cathodic Vacuum Arc

ABSTRACTDiamond-like carbon (DLC) films as a new strain-capping material with compressive stress up to 12GPa for strained silicon technology were fabricated by filtered cathodic vacuum arc (FCVA) deposition system. The films’ compositions and bonding structures were characterized using multi-wavelength Raman spectroscopy. The relationship between intrinsic stress and G peak dispersion of the films’ Raman spectra were discussed. The results showed that the bias voltage applied to substrate during deposition determines films’ sp3 bonding content and intrinsic stress. Process compatibility of the DLC films with standard CMOS technology was confirmed by using WDXRF measurement. Also diffusion behavior of carbon atoms in DLC films with copper and silicon was studied with a Cu(200nm)/DLC(40nm)/silicon multilayer structure annealed at 500℃ in N2 atmosphere for an hour. At last, stress induced on silicon surface by DLC strips was characterized using surface sensitive UV-Raman spectroscopy. The results showed that DLC films with extremely high compressive stress have potential application in future CMOS strain engineering.

scholarly journals Microstructure Changes of Ti-Al-C Films Deposited by Filtered Cathodic Vacuum Arc

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Xianjuan Pang ◽  
Xiaoqiang Liu ◽  
Bo Jin
Keyword(s):  
Raman Spectroscopy ◽  
Ir Spectroscopy ◽  
Flow Rate ◽  
Film Structure ◽  
Vacuum Arc ◽  
Chemical Bonds ◽  
Hydrogen Atoms ◽  
Filtered Cathodic Vacuum Arc ◽  
Carbon Network ◽  
Deposited Films

Nanocomposite Ti-Al-C films were deposited by filtered cathodic vacuum arc (FCVA) at different CH4flows. The deposited films were characterized in terms of elemental and phase compositions, chemical bonds, and texture as a function of CH4flow rate by XRD, XPS, HRTEM, Raman spectroscopy, and IR spectroscopy. The results show that the TiC grain size decreases from 4.2 to 2.9 nm as the CH4flow rate increases from 30 to 80 sccm. The analysis of XPS, HRTEM, and Raman spectroscopy shows that the microstructure of deposited films turns from a TiC dominant TiC-C film to a carbon network dominant TiAl-doped a-C film structure as the CH4flow increases from 30 sccm to 80 sccm. IR spectroscopy shows that most of the hydrogen atoms in the deposited films are bonded to the sp3-hybridized C atoms. All the composition and microstructure change can be explained by considering the plasma conditions and the effect of CH4flow.

Tribological behavior of diamond-like carbon coatings with patterned structure deposited by the filtered cathodic vacuum arc

2019 ◽  
Vol 685 ◽  
pp. 123-130 ◽  
Author(s):  
Yongqing Shen ◽  
Han Zhou ◽  
Haoqi Wang ◽  
Bin Liao ◽  
Xianying Wu ◽  
...  
Keyword(s):  
Tribological Behavior ◽  
Vacuum Arc ◽  
Diamond Like Carbon ◽  
Carbon Coatings ◽  
Filtered Cathodic Vacuum Arc

Control of Photo-Induced Degradation in a-Si:H Prepared from Xe-Diluted Silane

1991 ◽  
Vol 219 ◽  
Author(s):  
Satoshi Mashima ◽  
Kazuhiro Hasezaki ◽  
Atsushi Suzuki ◽  
Peter J. McElheny ◽  
Akihisa Matsuda
Keyword(s):  
Raman Spectroscopy ◽  
Infrared Spectroscopy ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Thermal Evolution ◽  
Dilution Method ◽  
Film Properties ◽  
Common Features ◽  
Spin Resonance

ABSTRACTFilms were prepared by the Xe-dilution method in an attempt to mimic the microstructure found in low-photodegradation deuterated films which show a greater number of clustered deuterium and microvoids when compared to conventional hydrogenated films. Common features were found for the light soaking behaviors in the film properties characterized by the electron spin resonance, gas thermal evolution, Raman spectroscopy, and infrared spectroscopy among deuterated, conventional hydrogenated, and Xe-diluted films.

Probing Semiconductor/Insulator Heterostructures Through Electron Spin Resonance of Point Defects: Interfaces, Interlayers, and Stress

2006 ◽  
Vol 984 ◽  
Author(s):  
A. Stesmans ◽  
K. Clémer ◽  
P. Somers ◽  
V. V. Afanas'ev
Keyword(s):  
Electron Spin Resonance ◽  
Integrated Circuits ◽  
Electron Spin ◽  
Point Defects ◽  
Atomic Scale ◽  
Interface Quality ◽  
Si Substrates ◽  
Spin Resonance ◽  
The Impact

AbstractElectron spin resonance (ESR) spectroscopy has become indispensable when it comes to the characterization on atomic-scale of structural, and correlated, electrical properties of actual semiconductor/insulator heterostructures. Through probing of paramagnetic point defects such as the Pb-type defects, E', and EX as a function of VUV irradiation and post deposition heat treatment, basic information as to the nature, quality, and thermal stability of the interface and interfacial regions can be established. This is illustrated by some specific examples of ESR analysis on contemporary Si/insulator structures promising for future developments in integrated circuits. First the impact of strain on the Si/SiO2 entity will be discussed. Through ESR analysis of thermally oxidized (111)Si substrates mechanically stressed in situ during oxidation, and tensile strained (100)sSi/SiO2 structures, it will be pointed out that in-plane tensile stress in Si can significantly improve the interface quality. Next, ESR results for stacks of (100)Si/SiOx/HfO2 and (100)Si/LaAlO3 are presented, revealing the potential to attain a high quality Si/SiO2 interface for the former and an abrupt, thermally stable interface for the latter.

Electron Spin Resonance of DNA Irradiated with a Heavy-Ion Beam ( 16 O 8+ ): Evidence for Damage to the Deoxyribose Phosphate Backbone

1996 ◽  
Vol 146 (4) ◽  
pp. 361 ◽  
Author(s):  
David Becker ◽  
Yurii Razskazovskii ◽  
Michael U. Callaghan ◽  
Michael D. Sevilla
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Ion Beam ◽  
Heavy Ion ◽  
Phosphate Backbone ◽  
Spin Resonance ◽  
Heavy Ion Beam
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