Synthesis of Superhard and Elastic Carbon Nitride Films by Filtered Cathodic Vacuum arc Combined with Radio Frequency Ion Beam Source

2002 ◽  
Vol 17 (3) ◽  
pp. 521-524 ◽  
Author(s):  
Y. H. Cheng ◽  
B. K. Tay ◽  
S. P. Lau ◽  
X. Shi ◽  
X. L. Qiao ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Carbon Nitride ◽  
Elastic Recovery ◽  
Ion Beam ◽  
Film Surface ◽  
Membered Ring ◽  
Vacuum Arc ◽  
Nitride Film ◽  
Beam Source ◽  
Filtered Cathodic Vacuum Arc

Superhard and elastic carbon nitride films with hardness and elastic recovery of 47 GPa and 87.5%, respectively, were synthesized by using a double-bend filtered cathodic vacuum arc combined with radio-frequency nitrogen ion beam source. The bombardment of energetic nitrogen atom onto the growing film surface results in the high atomic ratio of N/C (0.4), which contributes to the high sp2 content and the formation of a five-membered ring structure in the carbon nitride film at room temperature. The buckling of the five-membered ring basal planes may facilitate cross-linking between the planes through sp3 coordinated carbon atoms. A rigid three-dimensional network is formed, which contributes to the high hardness and elastic recovery of the deposited films.

Deposition of carbon nitride films by filtered cathodic vacuum arc combined with radio frequency ion beam source

2000 ◽  
Vol 9 (12) ◽  
pp. 2010-2018 ◽  
Author(s):  
Y.H Cheng ◽  
B.K Tay ◽  
S.P Lau ◽  
X Shi ◽  
H.C Chua ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Vacuum Arc ◽  
Beam Source ◽  
Filtered Cathodic Vacuum Arc

Micromechanical properties of carbon nitride films deposited by radio-frequency-assisted filtered cathodic vacuum arc

2002 ◽  
Vol 75 (3) ◽  
pp. 375-380 ◽  
Author(s):  
Y.H. Cheng ◽  
B.K. Tay ◽  
S.P. Lau ◽  
X.L. Qiao ◽  
J.G. Chen ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Carbon Nitride ◽  
Vacuum Arc ◽  
Micromechanical Properties ◽  
Filtered Cathodic Vacuum Arc

Preparation and characterization of thin films of carbon nitride

1995 ◽  
Vol 53 ◽  
pp. 104-105
Author(s):  
L. Wan ◽  
R. F. Egerton
Keyword(s):  
Carbon Nitride ◽  
Arc Discharge ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Reactive Sputtering ◽  
Vacuum Arc ◽  
Specimen Preparation ◽  
Bonding Structure ◽  
Electron Energy Loss

INTRODUCTION Recently, a new compound carbon nitride (CNx) has captured the attention of materials scientists, resulting from the prediction of a metastable crystal structure β-C3N4. Calculations showed that the mechanical properties of β-C3N4 are close to those of diamond. Various methods, including high pressure synthesis, ion beam deposition, chemical vapor deposition, plasma enhanced evaporation, and reactive sputtering, have been used in an attempt to make this compound. In this paper, we present the results of electron energy loss spectroscopy (EELS) analysis of composition and bonding structure of CNX films deposited by two different methods.SPECIMEN PREPARATION Specimens were prepared by arc-discharge evaporation and reactive sputtering. The apparatus for evaporation is similar to the traditional setup of vacuum arc-discharge evaporation, but working in a 0.05 torr ambient of nitrogen or ammonia. A bias was applied between the carbon source and the substrate in order to generate more ions and electrons and change their energy. During deposition, this bias causes a secondary discharge between the source and the substrate.

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

Aligned InN nanofingers prepared by the ion-beam assisted filtered cathodic vacuum arc technique

2005 ◽  
Vol 16 (12) ◽  
pp. 3069-3073 ◽  
Author(s):  
X H Ji ◽  
S P Lau ◽  
H Y Yang ◽  
S F Yu
Keyword(s):  
Ion Beam ◽  
Vacuum Arc ◽  
Filtered Cathodic Vacuum Arc

The use of a biomolecular target for crystalline carbon nitride film deposition by Ar ion-beam sputtering without any other source of nitrogen

1998 ◽  
Vol 72 (26) ◽  
pp. 3449-3451 ◽  
Author(s):  
L. C. Chen ◽  
T. R. Lu ◽  
C. T. Kuo ◽  
D. M. Bhusari ◽  
J. J. Wu ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Ion Beam ◽  
Film Deposition ◽  
Nitride Film ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Carbon Nitride Film
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