A model of strain relaxation in hetero-epitaxial films on compliant substrates

1998 ◽  
Vol 66 (1) ◽  
pp. 13-22 ◽  
Author(s):  
G. Kästner ◽  
U. Gösele ◽  
T.Y. Tan
Keyword(s):  
Strain Relaxation ◽  
Epitaxial Films ◽  
Compliant Substrates

Strain Relaxation During Heteroepitaxy on Twist-Bonded Thin Gallium Arsenide Substrates

1998 ◽  
Vol 535 ◽  
Author(s):  
P. Kopperschmidt ◽  
S T. Senz ◽  
R. Scholz ◽  
G. Kästner ◽  
U. Gösele ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Strain Relaxation ◽  
Twist Angle ◽  
Gaas Layer ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Compliant Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Epitaxial Deposition

AbstractWe realized “compliant” substrates in the square centimeter range by twist-wafer bonding of an (100) GaAs handle wafer to another (100) GaAs wafer with a several nm thick epitaxially grown GaAs layer followed by an appropriate back-etch procedure. The twist angle between the two GaAs wafers was chosen between 4 and 15 degrees. The twisted layers were characterized by area scanned X-ray diffraction, optical and electron microscopy and atomic force microscopy. Occasionally we observed regions showing pinholes in the transferred thin twistbonded GaAs layer.After epitaxial deposition of 300 nm InP and InGaAs films with different degrees of mismatch on these substrates, transmission electron microscopy revealed grains which are epitaxially oriented to either the substrate or the twist-bonded layer. The grain boundaries between the twisted and untwisted grains probably collect threading dislocations, thus reducing their density in the areas free of boundaries.

Strain relaxation in epitaxial films

1991 ◽  
Vol 20 (7) ◽  
pp. 701-701
Author(s):  
Krishna Rajan ◽  
Eugene Fitzgerald ◽  
K. Jagganadham ◽  
William Jesser
Keyword(s):  
Strain Relaxation ◽  
Epitaxial Films

Extended Pseudomorphic Limits Using Compliant Substrates

1992 ◽  
Vol 281 ◽  
Author(s):  
Y. H. Lo ◽  
W. J. Schaff ◽  
D. Teng
Keyword(s):  
Dynamic Model ◽  
Equilibrium Model ◽  
Thermal Equilibrium ◽  
Membrane Structure ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Substrate Thickness ◽  
New Approach ◽  
Supported Membrane ◽  
Compliant Substrates

ABSTRACTWe propose a new approach, growth on compliant substrates, to achieve extended pseudomorphic limits. The compliant substrate can be approximately achieved with a corner supported membrane structure. Both thermal equilibrium model and dynamic model considering strain relaxation are used to analyze the relations between the extended critical thickness and the substrate thickness. Preliminary experimental results of InGaAs grown on GaAs membranes seem to support the theories.

Spectroscopic ellipsometry study on strain relaxation of epitaxial films

1998 ◽  
Vol 106 (9) ◽  
pp. 597-600 ◽  
Author(s):  
Kwang Joo Kim ◽  
Myoung Hee Lee ◽  
Tae Won Kang ◽  
Myung Soo Han
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Strain Relaxation ◽  
Epitaxial Films

Rheed Study of Strain Relaxation in Epitaxial Cds and Sn Overlayers

1990 ◽  
Vol 208 ◽  
Author(s):  
David W. Niles ◽  
Hartmut Höchst
Keyword(s):  
Film Thickness ◽  
Lattice Constant ◽  
Reasonable Agreement ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Epitaxial Films ◽  
Mechanical Equilibrium ◽  
Lattice Constants ◽  
Critical Film Thickness ◽  
Experimental Findings

ABSTRACTThe relaxation of strain in epitaxial overlayers is studied through an analysis of RHEED patterns. From the separation of the RHEED reflections, we determine the in-plane lattice constants for α-Sn/Cd0.8Zn0.2Te(100), CdS/GaAs(100), and CdS/CdTe(100) heterostructures. The discussion focuses on the critical thickness of the overlayers and the relaxation of the inplane lattice constant (a∥) of epitaxial films which exceed the critical thickness. Predictions based on Matthews and Blakeslee's mechanical equilibrium theory show reasonable agreement with our experimental findings, indicating that the metastability of the epitaxial overlayers does not cause a significant reduction in the critical film thickness.

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