Strain Relaxation and Material Quality Improvement of Compressively Strained GeSn Epitaxial Films through a Cyclic Rapid Thermal Annealing Process

2014 ◽  
Author(s):  
Aboozar Mosleh ◽  
Seyed Amir Ghetmiri ◽  
Benjamin R. Conley ◽  
Wei Du ◽  
Shui-Qing Yu ◽  
...  
Keyword(s):  
Quality Improvement ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Strain Relaxation ◽  
Epitaxial Films ◽  
Annealing Process ◽  
Rapid Thermal Annealing Process ◽  
Material Quality ◽  
Thermal Annealing Process

Hydrogen Behavior in PECVD Nitride by SiH4 & ND3 During RTA

1996 ◽  
Vol 424 ◽  
Author(s):  
S. S. He ◽  
V. L. Shannon ◽  
T. Nguyen
Keyword(s):  
Silicon Nitride ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Process ◽  
Rapid Thermal Annealing Process ◽  
Wave Numbers ◽  
Thermal Annealing Process

AbstractPECVD silicon nitride was deposited by silane and deuterium ammonia. Silicon rich and nitrogen rich silicon nitride were deposited by varying the ratio of the SiH4/DH3. From FTIR, we found that the wave numbers of SiD and ND shifted lower when compared to SiH and NH bond in the NH3 nitride. In Si-rich nitride, both Si-H and Si-D bonds were found, which is different from N-rich nitride, where only an ND bond was found. Most of the hydrogen in NH(D) comes from the ammonia during PECVD deposition. We found that some of the deuterium exchanges its bonding to silicon from the initial bonding to nitrogen during a rapid thermal annealing process.

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