Strain relaxation in epitaxial films

1991 ◽  
Vol 20 (7) ◽  
pp. 701-701
Author(s):  
Krishna Rajan ◽  
Eugene Fitzgerald ◽  
K. Jagganadham ◽  
William Jesser
Keyword(s):  
Strain Relaxation ◽  
Epitaxial Films

A model of strain relaxation in hetero-epitaxial films on compliant substrates

1998 ◽  
Vol 66 (1) ◽  
pp. 13-22 ◽  
Author(s):  
G. Kästner ◽  
U. Gösele ◽  
T.Y. Tan
Keyword(s):  
Strain Relaxation ◽  
Epitaxial Films ◽  
Compliant Substrates

Spectroscopic ellipsometry study on strain relaxation of epitaxial films

1998 ◽  
Vol 106 (9) ◽  
pp. 597-600 ◽  
Author(s):  
Kwang Joo Kim ◽  
Myoung Hee Lee ◽  
Tae Won Kang ◽  
Myung Soo Han
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Strain Relaxation ◽  
Epitaxial Films

Rheed Study of Strain Relaxation in Epitaxial Cds and Sn Overlayers

1990 ◽  
Vol 208 ◽  
Author(s):  
David W. Niles ◽  
Hartmut Höchst
Keyword(s):  
Film Thickness ◽  
Lattice Constant ◽  
Reasonable Agreement ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Epitaxial Films ◽  
Mechanical Equilibrium ◽  
Lattice Constants ◽  
Critical Film Thickness ◽  
Experimental Findings

ABSTRACTThe relaxation of strain in epitaxial overlayers is studied through an analysis of RHEED patterns. From the separation of the RHEED reflections, we determine the in-plane lattice constants for α-Sn/Cd0.8Zn0.2Te(100), CdS/GaAs(100), and CdS/CdTe(100) heterostructures. The discussion focuses on the critical thickness of the overlayers and the relaxation of the inplane lattice constant (a∥) of epitaxial films which exceed the critical thickness. Predictions based on Matthews and Blakeslee's mechanical equilibrium theory show reasonable agreement with our experimental findings, indicating that the metastability of the epitaxial overlayers does not cause a significant reduction in the critical film thickness.

Strain relaxation in InxGa1−xN epitaxial films grown coherently on GaN

2003 ◽  
Vol 249 (3-4) ◽  
pp. 455-460 ◽  
Author(s):  
Seong-Eun Park ◽  
Byungsung O ◽  
Cheul-Ro Lee
Keyword(s):  
Strain Relaxation ◽  
Epitaxial Films

Dynamical X-ray diffraction analysis of Solid Phase Epitaxy growth of Si1-yCy heterostructures

2000 ◽  
Vol 647 ◽  
Author(s):  
J. Rodriguez-Viejo ◽  
Zakia el-Felk
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Liquid Nitrogen Temperature ◽  
Amorphous Layer ◽  
Epitaxial Films ◽  
High Dose ◽  
X Ray Diffraction ◽  
Strained Si ◽  
X Ray

AbstractThe strain and damage produced on Si substrates by high-dose ion implantation of Si and C is investigated after thermal treatments by double and triple crystal X-ray diffraction, high ressolution transmission electron microscopy (HRTEM) and Secondary Ion Mass Spectrometry (SIMS). Si implantation (180 keV, 5×1015 Si at cm−2) at liquid nitrogen temperature forms a buried amorphous layer. Annealing at temperatures close to 650°C results in epitaxial films with significant defect recovery. X-ray rocking curves show the existence of interference fringes on the left hand side of the 004 Si peak indicating the presence of tensile strained Si layers due to the generation of Si interstitials during the implantation process. C implantation, at 60 keV, 7×1015 cm−2 and 450°C, in the preamorphized Si wafers results in the growth of Si1-yCy epitaxial films with a low amount of substitutional carbon (y≍ 0.1%). Rapid thermal annealing at 750°C results in highly defective epitaxial films with a maximum carbon content close to 0.4%.The high density of defects is responsible for the partial strain relaxation observed in those layers. The amount of substitutional Si also decreases drastically with increasing temperature. Profile fitting of rocking curves using dynamical X-ray theory is used to estimate the C concentration and the strain and disorder profiles of the heterostructures.

Precipitation in Al + 4% Cu Epitaxial Films

1968 ◽  
Vol 26 ◽  
pp. 384-385
Author(s):  
S. Herd ◽  
S. M. Mader
Keyword(s):  
Solid Solution ◽  
Bulk Material ◽  
Epitaxial Films ◽  
Detectable Change ◽  
Cu Films ◽  
Solution Treated ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Diffraction Patterns ◽  
Deposited Films

Single crystal films in (001) orientation, about 1500 Å thick, were produced by R-F sputtering of Al + 4 wt % Cu onto cleaved KCl at 150°C substrate temperature. The as-deposited films contained numerous θ-CuAl2 particles (C16 structure) about 0.1μ in size. They were transferred onto Mo screens, solution treated and rapidly cooled (within about ½ min) so as to retain a homogeneous solid solution. Subsequently, the films were aged in vacuum at various temperatures in order to induce precipitation and to compare structures and morphologies of precipitate particles in Al-Cu films with those found in age hardened bulk material.Aging for 3 weeks at 60°C or 48 hrs at 100°C did not produce any detectable change in high resolution micrographs or diffraction patterns. In this range Guinier-Preston zones (GP) form in quenched bulk material. The absence of GP in the present experiments in this aging range is perhaps due to the cooling rate employed, which might be more equivalent to an aged and reverted bulk material than to a quenched one.

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