Plasma chemistry of fluorocarbons as related to plasma etching and plasma polymerization

2006 ◽  
pp. 1-42 ◽  
Author(s):  
Eric Kay ◽  
John Coburn ◽  
Alan Dilks
Keyword(s):  
Plasma Etching ◽  
Plasma Polymerization ◽  
Plasma Chemistry

Experimental and Theoretical Study of the Plasma Chemistry of Ethyl Lactate Plasma Polymerization Discharges

2014 ◽  
Vol 12 (5) ◽  
pp. 405-415 ◽  
Author(s):  
Sylvie Ligot ◽  
Maxime Guillaume ◽  
Patrice Raynaud ◽  
Damien Thiry ◽  
Vincent Lemaur ◽  
...  
Keyword(s):  
Plasma Polymerization ◽  
Theoretical Study ◽  
Plasma Chemistry ◽  
Ethyl Lactate

Plasma Damage Effects in InAlN Field Effect Transistors

1997 ◽  
Vol 468 ◽  
Author(s):  
F. Ren ◽  
J. R. Lothian ◽  
Y. K. Chen ◽  
J. D. Mackenzie ◽  
S. M. Donovan ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Plasma Chemistry ◽  
Hydrogen Passivation ◽  
Plasma Damage ◽  
Ion Energy ◽  
Deep Acceptor ◽  
Preferential Loss ◽  
Etched Surface

ABSTRACTDuring gate mesa plasma etching of InN/InAlN field effect transistors the apparent conductivity in the channel can be either increased through three different mechanisms. If hydrogen is part of the plasma chemistry, hydrogen passivation of the shallow donors in the InAlN can occur, we find diffusion depths for 2H of ≥ 0.5 micron in 30 mins at 200°C. The hydrogen remains in the material until temperatures ≥ 700°C Energetic ion bombardment in SF6/O2 or BCl/Ar plasmas also compensates the doping in the InAlN by creation of deep acceptor states. Finally the conductivity of the immediate InAlN surface can be increased by preferential loss of N during BCl3 plasma etching, leading to poor rectifying contact characteristics when the gate metal is deposited on this etched surface. Careful control of plasma chemistry, ion energy and stoichiometry of the etched surface are necessary for acceptable pinch-off characteristics.

A Surface Kinetic Model for Plasma Polymerization with Application to Plasma Etching

1990 ◽  
Vol 137 (8) ◽  
pp. 2575-2581 ◽  
Author(s):  
Anand J. Bariya ◽  
Curtis W. Frank ◽  
James P. McVittie
Keyword(s):  
Kinetic Model ◽  
Plasma Etching ◽  
Plasma Polymerization

Plasma Polymerization of Thin Films:  Correlations between Plasma Chemistry and Thin Film Character

Langmuir ◽  
2002 ◽  
Vol 18 (10) ◽  
pp. 4118-4123 ◽  
Author(s):  
Daniel C. Guerin ◽  
David D. Hinshelwood ◽  
Sorin Monolache ◽  
Ferencz S. Denes ◽  
Vasgen A. Shamamian
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Plasma Polymerization ◽  
Plasma Chemistry

A Study of the Optical Emission from an rf Plasma during Semiconductor Etching

1977 ◽  
Vol 31 (3) ◽  
pp. 201-207 ◽  
Author(s):  
W. R. Harshbarger ◽  
R. A. Porter ◽  
T. A. Miller ◽  
P. Norton
Keyword(s):  
Silicon Nitride ◽  
Plasma Etching ◽  
Spectroscopic Analysis ◽  
Etching Rate ◽  
Plasma Chemistry ◽  
Optical Emission ◽  
Etching Process ◽  
Semiconductor Materials ◽  
Rf Plasma ◽  
Semiconductor Etching

Spectroscopic analysis of optical emission during rf plasma etching of semiconductor materials has been used to gain a better understanding of the plasma chemistry involved in these systems. The emission was studied principally in CF4-O2 gas mixtures, but other gases were observed as well. It is known that the addition of a relatively small percentage of O2 to CF4 yields a much faster etching rate for silicon and silicon nitride. With the addition of 02 to CF4 discharges we have studied emission from atomic O and molecular CO with a large increase in the emission of atomic F. When the plasma is actively etching silicon or silicon nitride, the emission intensities of both F and O atoms are significantly lower. The etching process can be monitored by observing the intensities of these lines. Analysis of the emission features has also been used to determine abnormal conditions which can adversely affect the etching process.

Characterization of an ECR Microwave Plasma Etching System

1992 ◽  
Vol 269 ◽  
Author(s):  
Ming Jin ◽  
Kwan C. Kao
Keyword(s):  
Electron Temperature ◽  
Plasma Density ◽  
Plasma Etching ◽  
Microwave Plasma ◽  
Plasma Chemistry ◽  
Voltage Source ◽  
Magnetic Field Profile ◽  
Absorbed Power ◽  
Etching System ◽  
Gas Pressures

ABSTRACTAn ECR microwave plasma etching system and an alternating bias voltage source with variable frequencies ( 10kHz to 10 MHz ) have been built for the study of the effects of the substrate bias on the submicron feature etching. A quadrupole mass spectrometer was used for the end-point monitoring and the plasma chemistry analysis. A Langmuir probe was used to characterize the etching plasma. The system can generate plasmas with densities ranging from 1×1015m−3 to 5×1016m−3 corresponding to gas pressures from 1×10−4 torr to 6×10−3torr at a fairly low microwave power. This condition results in a stable electron temperature. The magnetic field profile can be adjusted to obtain a constant plasma density of 2.8×1016m−3 and an electron temperature in kTe of 4 eV to 5 eV. The plasma beam is of 75mm in diameter with the ion current intensity fluctuation of about ±5% at the etching position for the gas pressures ranging from 4×10−4 torr to 3×10−3 torr at an absorbed power of 70Watts. The plasma density, the electron temperature, the breakdown power, and the sustaining power have been studied as functions of gas pressure in order to optimize the etching performance.

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