Plasma Damage Effects in InAlN Field Effect Transistors

1997 ◽  
Vol 468 ◽  
Author(s):  
F. Ren ◽  
J. R. Lothian ◽  
Y. K. Chen ◽  
J. D. Mackenzie ◽  
S. M. Donovan ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Plasma Chemistry ◽  
Hydrogen Passivation ◽  
Plasma Damage ◽  
Ion Energy ◽  
Deep Acceptor ◽  
Preferential Loss ◽  
Etched Surface

ABSTRACTDuring gate mesa plasma etching of InN/InAlN field effect transistors the apparent conductivity in the channel can be either increased through three different mechanisms. If hydrogen is part of the plasma chemistry, hydrogen passivation of the shallow donors in the InAlN can occur, we find diffusion depths for 2H of ≥ 0.5 micron in 30 mins at 200°C. The hydrogen remains in the material until temperatures ≥ 700°C Energetic ion bombardment in SF6/O2 or BCl/Ar plasmas also compensates the doping in the InAlN by creation of deep acceptor states. Finally the conductivity of the immediate InAlN surface can be increased by preferential loss of N during BCl3 plasma etching, leading to poor rectifying contact characteristics when the gate metal is deposited on this etched surface. Careful control of plasma chemistry, ion energy and stoichiometry of the etched surface are necessary for acceptable pinch-off characteristics.

Electron Cyclotron Resonance Plasma Processing of GaAs-AlGaAs Hemt Structures

1991 ◽  
Vol 240 ◽  
Author(s):  
S. J. Pearton ◽  
F. Ren ◽  
J. R. Lothian ◽  
T. R. Fullowan ◽  
R. F. Kopf ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Complete Removal ◽  
Pattern Transfer ◽  
Hydrogen Passivation ◽  
Ion Energy ◽  
Ion Energies ◽  
Resonance Plasma ◽  
Or Gate

ABSTRACTThe damage introduced into GaAs/AlGaAs HEMT structures during pattern transfer (O2 plasma etching of the PMGI layer in a trilevel resist mask) or gate mesa etching (CCl2F2/O2 or CH4/H2/Ar etching of GaAs selectively to AlGaAs) has been studied. For etching of the PMGI, the threshold O+ ion energy for damage introduction into the AlGaAs donor layer is ∼200 eV. This energy is a function of the PMGI over-etch time. The use of ECR-RF O2 discharges enhances the PMGI etch rate without creating additional damage to the device. Gate mesa etching produces measurable damage in the underlying AlGaAs at DC negative biases of 125–150V. Substantial hydrogen passivation of the Si dopants in the AlGaAs occurs with the CH4 /H2 /Ar mixture. Recovery of the initial carrier concentration in the damaged HEMT occurs at ∼400°C, provided the maximum ion energies were dept to ≤400 eV. Complete removal of residual AIF3 on the CCl2F2/O2 exposed AlGaAs was obtained after H2O and NH4 OH:H2O rinsing while chlorides were removed by H2O alone.

Elevated Temperature Operation of 4H-SiC Nanoribbon Field Effect Transistors

2015 ◽  
Vol 15 (10) ◽  
pp. 7551-7554 ◽  
Author(s):  
Min Seok Kang ◽  
Susanna Yu ◽  
Sang Mo Koo
Keyword(s):  
Elevated Temperature ◽  
Plasma Etching ◽  
Field Effect ◽  
Heat Dissipation ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Top Down ◽  
Channel Mobility ◽  
Channel Thickness ◽  
Effective Channel

We fabricated 4H-SiC nanoribbon field effect transistors (FETs) of various channel thickness (tch) of 100∼500 nm by a “top–down” approach, using a lithography and plasma etching process. We studied the dependence of the device transfer characteristics on the channel geometry. This demonstrated that fabricated SiC nanoribbon FETs with a tch of 100 nm show normally-on characteristics, and have a threshold voltage of −12 V, and a maximum transconductance value of 8.8 mS, which shows improved drain current degradation of the SiC nanoribbon FETs with tch =100 nm at elevated temperature. This can be attributed to the improved heat dissipation, enhanced channel mobility, and together with widening of effective channel thickness depletion induced.

scholarly journals Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors

2021 ◽  
Author(s):  
Etienne Eustache ◽  
M.A. Mahjoub ◽  
Y. Guerfi ◽  
Sébastien Labau ◽  
J. Aubin ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Field Effect ◽  
Field Effect Transistors

Plasma damage effects in InAlN field effect transistors

1996 ◽  
Vol 39 (12) ◽  
pp. 1747-1752 ◽  
Author(s):  
F. Ren ◽  
J.R. Lothian ◽  
J.D. Mackenzie ◽  
C.R. Abernathy ◽  
C.B. Vartuli ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Plasma Damage

scholarly journals Study for plasma etching of dielectric film in semiconductor device manufacturing. Review of ASET research project

2002 ◽  
Vol 74 (3) ◽  
pp. 381-395 ◽  
Author(s):  
Makoto Sekine
Keyword(s):  
Plasma Etching ◽  
Semiconductor Device ◽  
Process Development ◽  
Reaction Model ◽  
Design Rule ◽  
Plasma Etch ◽  
Electron Collisions ◽  
Ion Energy ◽  
Etched Surface ◽  
Polymer Thickness

Conventional developments were conducted in a very empirical way, such as a trial and error with many speculations using qualitative data. This approach requires more and more resources and time for the development of future devices with a design rule below 100 nm in the system on a chip (SOC) era. It is necessary to establish a systematic methodology for process development and qualification. ASET Plasma Laboratory had been found to research a basis for the systematic development of the plasma etching technology. Fluorocarbon (CF) plasma for the etching of high-aspect-ratio contact holes in SiO2 was investigated intensively in the 5-year program that finished in March 2001. They introduced 5 plasma sources that can etch 0.1-mm contact holes on a 200-mm wafer in production, and state-of-the-art diagnostics tools for the plasma and etched surface. The SiO2 etch mechanism was revealed from the etch species generation to the reaction in a deep hole. The number of electron collisions to fluorocarbon gas molecule is proposed as an important parameter to control the gas dissociation and etch species flux to the surface. An etch reaction model was also proposed using the estimated-surface-reaction probability that is a function of ion energy and CF polymer thickness that reduces the net ion energy to the reaction layer. The CF polymer thickness was determined by a balance equation of generation term (radical fluxes) and loss terms (etching by ions, radicals, and out-flux oxygen from SiO2). A program was developed and successfully predicts the etch rates of Si-containing materials, including organic dielectrics. Requirements for the next-generation plasma etch tools are also discussed.

Fabrication of diamond in-plane-gated field effect transistors using oxygen plasma etching

2003 ◽  
Vol 12 (3-7) ◽  
pp. 408-412 ◽  
Author(s):  
Tokishige Banno ◽  
Minoru Tachiki ◽  
Kazushi Nakazawa ◽  
Yu Sumikawa ◽  
Hitoshi Umezawa ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Field Effect ◽  
Oxygen Plasma ◽  
Field Effect Transistors ◽  
Oxygen Plasma Etching
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