Plasma Polymerization of Thin Films:  Correlations between Plasma Chemistry and Thin Film Character

Langmuir ◽  
2002 ◽  
Vol 18 (10) ◽  
pp. 4118-4123 ◽  
Author(s):  
Daniel C. Guerin ◽  
David D. Hinshelwood ◽  
Sorin Monolache ◽  
Ferencz S. Denes ◽  
Vasgen A. Shamamian
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Plasma Polymerization ◽  
Plasma Chemistry

SYNTHESIS OF IODINE DOPED n-BMA THIN FILMS VIA PLASMA POLYMERIZATION TECHNIQUE: EFFECT ON OPTICAL PROPERTIES

2019 ◽  
Vol 27 (04) ◽  
pp. 1950133
Author(s):  
RAHIMA NASRIN ◽  
HUMAYUN KABIR ◽  
A. H. BHUIYAN
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Plasma Polymerization ◽  
Film Surface ◽  
Microscopic Analysis ◽  
Butyl Methacrylate ◽  
Root Mean Square Roughness ◽  
Iodine Doping ◽  
Thin Film Surface

In order to understand the variation of surface morphology and optical properties due to modification, an attempt has been made to synthesize iodine-doped n-butyl methacrylate thin films through plasma polymerization technique. Field emission scanning electron microscope images displayed that the surface of the modified plasma polymerized n-butyl methacrylate (PPnBMA) thin films became smooth after iodine doping. Atomic force microscopic analysis reveals that with increasing doping time from 0[Formula: see text]min to 60[Formula: see text]min the surface root-mean-square roughness value is decreased from 0.68[Formula: see text]nm to 0.51[Formula: see text]nm, which suggests that roughness of the PPnBMA thin film surface quite improved due to iodine doping. UV-Vis absorption spectroscopic analyses exhibited that iodine doping noticeably decreased both the direct and indirect energy bandgap values of PPnBMA thin film. The effect of doping by iodine on absorption coefficient, extinction coefficient, etc. of these thin films have been also discussed.

Coating of Ultrathin Polymer Films on Carbon Nanotubes by a Plasma Treatment

2002 ◽  
Vol 740 ◽  
Author(s):  
Peng He ◽  
Jie Lian ◽  
Donglu Shi ◽  
Lumin Wang ◽  
David Mast ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carbon Nanotubes ◽  
Plasma Treatment ◽  
Polymer Films ◽  
Plasma Polymerization ◽  
Multi Wall Carbon Nanotubes ◽  
Layer 2 ◽  
Ultrathin Polymer Films ◽  
Secondary Ion

ABSTRACTUltrathin polymer films have been deposited on both single- and multi-wall carbon nanotubes using a plasma polymerization treatment. HRTEM experiments showed that an extremely thin film of the pyrrole layer (2–7 nm) was uniformly deposited on the surfaces of the nanotubes including inner wall surfaces of the multi-wall nanotubes. Time-of-Flight Secondary ion mass spectroscopy (TOFSIMS) experiments confirmed the nanosurface deposition of polymer thin films on the nanotubes. The deposition mechanisms and the effects of plasma treatment parameters are discussed.

Plasma Polymerized Thin-Films for Biosensors

2008 ◽  
Vol 47-50 ◽  
pp. 1367-1370
Author(s):  
Chin Chuan Chang ◽  
Shu Ling Wang ◽  
Wen Chi Tseng ◽  
Meng Jiy Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chinese Hamster Ovary ◽  
Plasma Polymerization ◽  
Chinese Hamster ◽  
Glass Slide ◽  
Good Adhesion ◽  
Deposition Rates ◽  
Chemical Structures ◽  
Amine Groups

Plasma polymerization is an effective method to directly deposit ultra-thin film on substrates with advantageous properties such as good adhesion and biocompatibility. In this paper, the monomers containing amine groups with various unsaturated structures (propylamine, allylamine) are chosen to provide amine functionalities and to promote biocompatibilities for the polymerized thin films. The deposition rates revealed by measuring the thickness of thin films are characterized by profilometer under various plasma conditions. FTIR and AFM are used to study the chemical structures and morphology of the deposited thin films. In order to examine the applicability of the deposited polymers for biosensors, the activities of the incorporated biomolecules on deposited thin films are analyzed. Chinese hamster ovary (CHO) cells are cultivated on the polymerized thin films. Both propylamine and allylamine polymerized thin films show enhanced cell viability than on glass slide substrates.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Scanning-probe microscope analysis of optical thin films: A new analytical tool in a manufacturing environment

1994 ◽  
Vol 52 ◽  
pp. 1068-1069
Author(s):  
S. P. Sapers ◽  
R. Clark ◽  
P. Somerville
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Control ◽  
Scanning Probe Microscope ◽  
Scanning Probe ◽  
List Type ◽  
Manufacturing Environment ◽  
Physical Measurements ◽  
Probe Microscope

OCLI is a leading manufacturer of thin films for optical and thermal control applications. The determination of thin film and substrate topography can be a powerful way to obtain information for deposition process design and control, and about the final thin film device properties. At OCLI we use a scanning probe microscope (SPM) in the analytical lab to obtain qualitative and quantitative data about thin film and substrate surfaces for applications in production and research and development. This manufacturing environment requires a rapid response, and a large degree of flexibility, which poses special challenges for this emerging technology. The types of information the SPM provides can be broken into three categories:(1)Imaging of surface topography for visualization purposes, especially for samples that are not SEM compatible due to size or material constraints;(2)Examination of sample surface features to make physical measurements such as surface roughness, lateral feature spacing, grain size, and surface area;(3)Determination of physical properties such as surface compliance, i.e. “hardness”, surface frictional forces, surface electrical properties.

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

Electron Microscopy Studies of The Chemistry And Microstructure of BaF2 / YBa2Cu3O7-x Thin Films

1994 ◽  
Vol 52 ◽  
pp. 796-797
Author(s):  
J. L. Lee ◽  
C. A. Weiss ◽  
R. A. Buhrman ◽  
J. Silcox
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Transmission Electron Microscope ◽  
Atomic Scale ◽  
Island Growth ◽  
Multilayer Systems ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Mgo Substrate

BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO film.Images from a VG HB501A UHV scanning transmission electron microscope (STEM) operating at 100 kV show that the thickness of the BaF2 film is rather uniform, with the BaF2/YBCO interface being quite flat. Relatively few intrinsic defects, such as hillocks and depressions, were evident in the BaF2 film. Moreover, the hillocks and depressions appear to be faceted along {111} planes, suggesting that the surface is smooth and well-ordered on an atomic scale and that an island growth mechanism is involved in the evolution of the BaF2 film.

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