Evolution of structure in thin microcrystalline silicon films grown by electron-cyclotron resonance chemical vapor deposition

2000 ◽  
Vol 88 (7) ◽  
pp. 4376 ◽  
Author(s):  
M. Birkholz ◽  
B. Selle ◽  
E. Conrad ◽  
K. Lips ◽  
W. Fuhs
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Evolution Of Structure

Stable Amorphous Silicon and Improved Microcrystalline Silicon by Photon-Assisted Electron Cyclotron Resonance Chemical Vapor Deposition

1999 ◽  
Vol 557 ◽  
Author(s):  
Young J. Song ◽  
Wayne A. Anderson
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Microcrystalline Silicon ◽  
Solar Cell Efficiency ◽  
Force Microscopy ◽  
Cell Efficiency

AbstractAmorphous (a-Si) and microcrystalline silicon (μc-Si) are widely used in photovoltaics and thin film transistors. These products suffer from instability and less than desired electrical properties. We have utilized photon-assisted electron cyclotron resonance chemical vapor deposition (PA-ECRCVD) resulting in great improvement in both areas. For example, PA-ECRCVD compared with conventional ECR-CVD gives carrier lifetime of 1.35 4ts compared to 0.17 μs, and photovoltaic solar cell efficiency of 10 % compared to 5.9 %. Moreover, the PAECRCVD cell only degraded to 9.8 % compared to the ECR-CVD cell degradation to 5.5 %, under long term exposure to tungsten lamp illumination. In addition, PA-ECRCVD gives much enhanced crystallinity in μc-Si as revealed by atomic force microscopy and Raman spectroscopy.

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