Wavelength tuning in strained layer InGaAs-GaAs-AlGaAs quantum well lasers by selective-area MOCVD

T. M. Cockerill; D. V. Forbes; H. Han; B. A. Turkot; J. A. Dantzig; I. M. Robertson; J. J. Coleman

doi:10.1007/bf02655256

Wavelength tuning in strained layer InGaAs-GaAs-AlGaAs quantum well lasers by selective-area MOCVD

Journal of Electronic Materials ◽

10.1007/bf02655256 ◽

1994 ◽

Vol 23 (2) ◽

pp. 115-119 ◽

Cited By ~ 19

Author(s):

T. M. Cockerill ◽

D. V. Forbes ◽

H. Han ◽

B. A. Turkot ◽

J. A. Dantzig ◽

...

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Wavelength Tuning ◽

Strained Layer ◽

Selective Area

Download Full-text

Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure quantum-well lasers by three-step selective-area metalorganic chemical vapor deposition

IEEE Journal of Quantum Electronics ◽

10.1109/3.283791 ◽

1994 ◽

Vol 30 (2) ◽

pp. 441-445 ◽

Cited By ~ 26

Author(s):

T.M. Cockerill ◽

D.V. Forbes ◽

J.A. Dantzig ◽

J.J. Coleman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Strained Layer ◽

Selective Area ◽

Buried Heterostructure ◽

Metalorganic Chemical

Download Full-text

Strained-layer InGaAs-GaAs-InGaP buried-heterostructure quantum-well lasers on a low-composition InGaAs substrate by selective-area MOCVD

IEEE Photonics Technology Letters ◽

10.1109/68.662570 ◽

1998 ◽

Vol 10 (4) ◽

pp. 489-491 ◽

Cited By ~ 3

Author(s):

A.M. Jones ◽

J.J. Coleman ◽

B. Lent ◽

A.H. Moore ◽

W.A. Bonner

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Strained Layer ◽

Selective Area ◽

Buried Heterostructure

Download Full-text

High-power 0.98-μm strained-layer quantum-well lasers with InGaP cladding

Microwave and Optical Technology Letters ◽

10.1002/mop.4650070313 ◽

1994 ◽

Vol 7 (3) ◽

pp. 139-143 ◽

Cited By ~ 1

Author(s):

Tetsuro Ijichi ◽

Michio Ohkubo ◽

Akira Iketani ◽

Toshio Kikuta

Keyword(s):

Quantum Well ◽

High Power ◽

Quantum Well Lasers ◽

Strained Layer

Download Full-text

Power penalty in 1.3-μm InP-based strained-layer multiple-quantum-well lasers at elevated temperatures

IEEE Photonics Technology Letters ◽

10.1109/68.618478 ◽

1997 ◽

Vol 9 (9) ◽

pp. 1205-1207 ◽

Cited By ~ 10

Author(s):

S. Seki ◽

K. Yokoyama

Keyword(s):

Quantum Well ◽

Elevated Temperatures ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Power Penalty ◽

Strained Layer

Download Full-text

Low‐threshold InGaAs strained‐layer quantum‐well lasers (λ=0.98 μm) with GaInP cladding layers and mass‐transported buried heterostructure

Applied Physics Letters ◽

10.1063/1.107377 ◽

1992 ◽

Vol 60 (1) ◽

pp. 6-8 ◽

Cited By ~ 68

Author(s):

Z. L. Liau ◽

S. C. Palmateer ◽

S. H. Groves ◽

J. N. Walpole ◽

L. J. Missaggia

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Strained Layer ◽

Buried Heterostructure ◽

Low Threshold ◽

Cladding Layers

Download Full-text

Optical gain of strained-layer hexagonal and cubic GaN quantum well lasers

10.1117/12.275554 ◽

1997 ◽

Author(s):

Do-Yeol Ahn

Keyword(s):

Quantum Well ◽

Optical Gain ◽

Quantum Well Lasers ◽

Strained Layer ◽

Cubic Gan

Download Full-text

Role of growth temperature in GSMBE growth of strained-layer InGaAs/GaAs quantum well lasers

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90606-w ◽

1993 ◽

Vol 127 (1-4) ◽

pp. 209-212 ◽

Cited By ~ 5

Author(s):

G. Zhang ◽

A. Ovtchinnikov ◽

M. Pessa

Keyword(s):

Quantum Well ◽

Growth Temperature ◽

Quantum Well Lasers ◽

Strained Layer

Download Full-text

Design criteria for highly-efficient operation of 1.3-/spl mu/m InP-based strained-layer multiple-quantum-well lasers at elevated temperatures

IEEE Photonics Technology Letters ◽

10.1109/68.403990 ◽

1995 ◽

Vol 7 (8) ◽

pp. 839-841 ◽

Cited By ~ 13

Author(s):

S. Seki ◽

H. Oohashi ◽

H. Sugiura ◽

T. Hirono ◽

K. Yokoyama

Keyword(s):

Quantum Well ◽

Elevated Temperatures ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Design Criteria ◽

Multiple Quantum ◽

Efficient Operation ◽

Strained Layer ◽

Highly Efficient

Download Full-text

Low‐threshold 1.3‐μm wavelength, InGaAsP strained‐layer multiple quantum well lasers grown by gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.112192 ◽

1994 ◽

Vol 65 (7) ◽

pp. 892-894 ◽

Cited By ~ 7

Author(s):

Guang‐Jye Shiau ◽

Chih‐Ping Chao ◽

Paul E. Burrows ◽

Stephen R. Forrest

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Strained Layer ◽

Gas Source ◽

Low Threshold

Download Full-text

Low‐threshold InGaAs strained‐layer quantum well lasers (λ=0.98 μm) with GaInP cladding layers prepared by chemical beam epitaxy

Applied Physics Letters ◽

10.1063/1.107788 ◽

1992 ◽

Vol 61 (7) ◽

pp. 755-757 ◽

Cited By ~ 11

Author(s):

W. T. Tsang ◽

R. Kapre ◽

M. C. Wu ◽

Y. K. Chen

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Chemical Beam Epitaxy ◽

Strained Layer ◽

Low Threshold ◽

Cladding Layers

Download Full-text