Low‐threshold InGaAs strained‐layer quantum well lasers (λ=0.98 μm) with GaInP cladding layers prepared by chemical beam epitaxy

1992 ◽  
Vol 61 (7) ◽  
pp. 755-757 ◽  
Author(s):  
W. T. Tsang ◽  
R. Kapre ◽  
M. C. Wu ◽  
Y. K. Chen
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Chemical Beam Epitaxy ◽  
Strained Layer ◽  
Low Threshold ◽  
Cladding Layers

Strained‐layer InGaAs quantum well lasers emitting at 1.5 μm grown by chemical beam epitaxy

1992 ◽  
Vol 61 (3) ◽  
pp. 318-320 ◽  
Author(s):  
Hideo Sugiura ◽  
Yoshio Noguchi ◽  
Ryuzo Iga ◽  
Takeshi Yamada ◽  
Hidehiko Kamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Chemical Beam Epitaxy ◽  
Strained Layer ◽  
Ingaas Quantum Well

Investigation of effect of strain on low-threshold 1.3 µm InGaAsP strained-layer quantum well lasers

1994 ◽  
Vol 30 (10) ◽  
pp. 788-789 ◽  
Author(s):  
T. Tsuchiya ◽  
M. Komori ◽  
K. Uomi ◽  
A. Oka ◽  
T. Kawano ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Low Threshold

Low threshold current density 1.3-/spl mu/m strained-layer quantum-well lasers using n-type modulation doping

1994 ◽  
Vol 6 (10) ◽  
pp. 1165-1166 ◽  
Author(s):  
T. Yamamoto ◽  
T. Watanabe ◽  
S. Ide ◽  
I. Tanaka ◽  
H. Nobuhara ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Modulation Doping ◽  
Strained Layer ◽  
Low Threshold

Strained-layer 1.5 μm wavelength InGaAs/InP multiple quantum well lasers grown by chemical beam epitaxy

1990 ◽  
Vol 26 (24) ◽  
pp. 2035 ◽  
Author(s):  
W.T. Tsang ◽  
M.C. Wu ◽  
L. Yang ◽  
Y.K. Chen ◽  
A.M. Sergent
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Chemical Beam Epitaxy ◽  
Strained Layer
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