Strained-layer InGaAs-GaAs-InGaP buried-heterostructure quantum-well lasers on a low-composition InGaAs substrate by selective-area MOCVD

1998 ◽  
Vol 10 (4) ◽  
pp. 489-491 ◽  
Author(s):  
A.M. Jones ◽  
J.J. Coleman ◽  
B. Lent ◽  
A.H. Moore ◽  
W.A. Bonner
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Selective Area ◽  
Buried Heterostructure

Low‐threshold disorder‐defined buried heterostructure strained‐layer AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well lasers (λ∼910 nm)

1989 ◽  
Vol 54 (10) ◽  
pp. 913-915 ◽  
Author(s):  
J. S. Major ◽  
L. J. Guido ◽  
K. C. Hsieh ◽  
N. Holonyak ◽  
W. Stutius ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Buried Heterostructure ◽  
Low Threshold

High‐power operation of buried‐heterostructure strained‐layer InGaAs/GaAs single quantum well lasers

1990 ◽  
Vol 57 (26) ◽  
pp. 2762-2763 ◽  
Author(s):  
T. R. Chen ◽  
L. E. Eng ◽  
Y. H. Zhuang ◽  
Y. J. Xu ◽  
H. Zaren ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Buried Heterostructure ◽  
High Power Operation ◽  
Power Operation

Wavelength tuning in strained layer InGaAs-GaAs-AlGaAs quantum well lasers by selective-area MOCVD

1994 ◽  
Vol 23 (2) ◽  
pp. 115-119 ◽  
Author(s):  
T. M. Cockerill ◽  
D. V. Forbes ◽  
H. Han ◽  
B. A. Turkot ◽  
J. A. Dantzig ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Wavelength Tuning ◽  
Strained Layer ◽  
Selective Area
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