Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure quantum-well lasers by three-step selective-area metalorganic chemical vapor deposition

T.M. Cockerill; D.V. Forbes; J.A. Dantzig; J.J. Coleman

doi:10.1109/3.283791

Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure quantum-well lasers by three-step selective-area metalorganic chemical vapor deposition

IEEE Journal of Quantum Electronics ◽

10.1109/3.283791 ◽

1994 ◽

Vol 30 (2) ◽

pp. 441-445 ◽

Cited By ~ 26

Author(s):

T.M. Cockerill ◽

D.V. Forbes ◽

J.A. Dantzig ◽

J.J. Coleman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Strained Layer ◽

Selective Area ◽

Buried Heterostructure ◽

Metalorganic Chemical

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InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.100935 ◽

1989 ◽

Vol 54 (6) ◽

pp. 499-501 ◽

Cited By ~ 70

Author(s):

P. K. York ◽

K. J. Beernink ◽

G. E. Fernández ◽

J. J. Coleman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Strained Layer ◽

Buried Heterostructure ◽

Metalorganic Chemical

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InGaAsP multiple quantum well lasers with planar buried heterostructure prepared by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.99547 ◽

1988 ◽

Vol 52 (25) ◽

pp. 2099-2101 ◽

Cited By ~ 3

Author(s):

H. Ishiguro ◽

T. Kawabata ◽

S. Koike

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Buried Heterostructure ◽

Metalorganic Chemical

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High power 1.017‐μm strained‐layer quantum well lasers grown by metalorganic chemical‐vapor deposition

Applied Physics Letters ◽

10.1063/1.107306 ◽

1992 ◽

Vol 60 (12) ◽

pp. 1413-1414 ◽

Cited By ~ 13

Author(s):

Michio Ohkubo ◽

Tetsuro Ijichi ◽

Akira Iketani ◽

Toshio Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

High Power ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Strained Layer ◽

Metalorganic Chemical

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Strained-layer InGaAs-GaAs-AlGaAs buried heterostructure lasers by three-step selective-area metalorganic chemical vapor deposition

Proceedings of LEOS '93 ◽

10.1109/leos.1993.379149 ◽

2002 ◽

Author(s):

T.M. Cockerill ◽

D.V. Forbes ◽

J.J. Coleman

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Strained Layer ◽

Selective Area ◽

Buried Heterostructure ◽

Metalorganic Chemical

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Metalorganic chemical vapor deposition of InGaAs-GaAs-AlGaAs strained-layer quantum well lasers

Journal of Crystal Growth ◽

10.1016/0022-0248(91)90551-f ◽

1991 ◽

Vol 107 (1-4) ◽

pp. 741-750 ◽

Cited By ~ 13

Author(s):

P.K. York ◽

K.J. Beernink ◽

J. Kim ◽

J.J. Alwan ◽

J.J. Coleman ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Strained Layer ◽

Metalorganic Chemical

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A strained-layer InGaAs-GaAs buried heterostructure circular ring laser with integrated Y-coupled passive waveguide by selective-area metalorganic chemical vapor deposition

Proceedings of IEEE 14th International Semiconductor Laser Conference ISLC-94 ◽

10.1109/islc.1994.519331 ◽

2002 ◽

Cited By ~ 5

Author(s):

T.M. Cockerill ◽

M.L. Osowski ◽

R.M. Lammert ◽

J.J. Coleman

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Ring Laser ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Circular Ring ◽

Strained Layer ◽

Selective Area ◽

Buried Heterostructure ◽

Metalorganic Chemical

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1.3 mu m InAs/sub y/P/sub 1/-/sub /y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition

IEEE Journal of Quantum Electronics ◽

10.1109/3.234387 ◽

1993 ◽

Vol 29 (6) ◽

pp. 1528-1535 ◽

Cited By ~ 27

Author(s):

A. Kasukawa ◽

T. Namegaya ◽

T. Fukushima ◽

N. Iwai ◽

T. Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Strained Layer ◽

Quantum Well Laser ◽

Metalorganic Chemical

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1.3 μm InAsyP1−y/InP strained‐layer quantum well laser diodes grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.108163 ◽

1992 ◽

Vol 61 (21) ◽

pp. 2506-2508 ◽

Cited By ~ 33

Author(s):

Y. Imajo ◽

A. Kasukawa ◽

T. Namegaya ◽

T. Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Strained Layer ◽

Quantum Well Laser ◽

Metalorganic Chemical

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Temperature engineered growth of low‐threshold quantum well lasers by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.101242 ◽

1989 ◽

Vol 54 (2) ◽

pp. 105-107 ◽

Cited By ~ 32

Author(s):

K. M. Dzurko ◽

E. P. Menu ◽

C. A. Beyler ◽

J. S. Osinski ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Low Threshold ◽

Metalorganic Chemical

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Dilute Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition

Dilute III-V Nitride Semiconductors and Material Systems - Materials Science ◽

10.1007/978-3-540-74529-7_18 ◽

2008 ◽

pp. 449-501 ◽

Cited By ~ 1

Author(s):

N. Tansu ◽

L. J. Mawst

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Dilute Nitride ◽

Metalorganic Chemical

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