Low‐threshold InGaAs strained‐layer quantum‐well lasers (λ=0.98 μm) with GaInP cladding layers and mass‐transported buried heterostructure
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1996 ◽
Vol 35
(Part 2, No. 5B)
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pp. L634-L636
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1994 ◽
Vol 6
(10)
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pp. 1165-1166
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