Low‐threshold 1.3‐μm wavelength, InGaAsP strained‐layer multiple quantum well lasers grown by gas source molecular beam epitaxy

Guang‐Jye Shiau; Chih‐Ping Chao; Paul E. Burrows; Stephen R. Forrest

doi:10.1063/1.112192

Low‐threshold 1.3‐μm wavelength, InGaAsP strained‐layer multiple quantum well lasers grown by gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.112192 ◽

1994 ◽

Vol 65 (7) ◽

pp. 892-894 ◽

Cited By ~ 7

Author(s):

Guang‐Jye Shiau ◽

Chih‐Ping Chao ◽

Paul E. Burrows ◽

Stephen R. Forrest

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Strained Layer ◽

Gas Source ◽

Low Threshold

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Low‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.98481 ◽

1987 ◽

Vol 51 (4) ◽

pp. 221-223 ◽

Cited By ~ 20

Author(s):

Tow C. Chong ◽

Clifton G. Fonstad

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Si Substrates ◽

Low Threshold

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Yellow (5735 Å) emission GaInP multiple quantum well lasers grown by gas source molecular-beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588157 ◽

1995 ◽

Vol 13 (2) ◽

pp. 762 ◽

Cited By ~ 3

Author(s):

A. C. Chen

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Gas Source

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InGaAs/GaAs/InGaP multiple‐quantum‐well lasers prepared by gas‐source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.105858 ◽

1991 ◽

Vol 59 (22) ◽

pp. 2781-2783 ◽

Cited By ~ 28

Author(s):

J. M. Kuo ◽

Y. K. Chen ◽

M. C. Wu ◽

M. A. Chin

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Gas Source

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Yellow light (576 nm) lasing emission of GaInP/AlInP multiple quantum well lasers prepared by gas-source-molecular-beam-epitaxy

Electronics Letters ◽

10.1049/el:19900430 ◽

1990 ◽

Vol 26 (10) ◽

pp. 657-658 ◽

Cited By ~ 12

Author(s):

Y. Kaneko ◽

A. Kikuchi ◽

I. Nomura ◽

K. Kishino

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Yellow Light ◽

Gas Source

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Strain-compensations for interfacial strain and average strain in InGaAs/InAIP highly compressive-strained multiple quantum well structures on InP grown by gas source molecular beam epitaxy

Control of Semiconductor Interfaces ◽

10.1016/b978-0-444-81889-8.50016-x ◽

1994 ◽

pp. 69-73

Author(s):

K. Naniwae ◽

S. Sugou ◽

T. Anan

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Average Strain ◽

Quantum Well Structures ◽

Gas Source ◽

Interfacial Strain

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Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

Applied Physics Letters ◽

10.1063/1.3373834 ◽

2010 ◽

Vol 96 (14) ◽

pp. 141112 ◽

Cited By ~ 45

Author(s):

V. N. Jmerik ◽

A. M. Mizerov ◽

A. A. Sitnikova ◽

P. S. Kop’ev ◽

S. V. Ivanov ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Low Threshold

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Low-Threshold $\bf 1.3\,\mbi{\mu}m$ Wavelength, Strained-Layer InGaAsP Multi-Quantum Well Lasers Grown by All Solid Source Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.l634 ◽

1996 ◽

Vol 35 (Part 2, No. 5B) ◽

pp. L634-L636 ◽

Cited By ~ 4

Author(s):

Mika Toivonen ◽

Pekka Savolainen ◽

Harry Asonen ◽

Richard Murison

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Strained Layer ◽

Low Threshold ◽

Multi Quantum Well

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Molecular-beam epitaxy of phosphor-free 1.3 μm InAlGaAs multiple-quantum-well lasers on InP (100)

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2737434 ◽

2007 ◽

Vol 25 (3) ◽

pp. 1090 ◽

Cited By ~ 3

Author(s):

W. Li ◽

D. Moscicka ◽

A. Torfi ◽

W. I. Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum

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Type I/Type II Transition in InGaAlAs/InP Multiple Quantum Well Structures Grown by Gas Source Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l79 ◽

1994 ◽

Vol 33 (Part 2, No. 1B) ◽

pp. L79-L82 ◽

Cited By ~ 13

Author(s):

Yuichi Kawamura ◽

Hideki Kobayashi ◽

Hidetoshi Iwamura

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Type I ◽

Type Ii ◽

Quantum Well Structures ◽

Gas Source

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High-performance long-wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:20070279 ◽

2007 ◽

Vol 43 (8) ◽

pp. 454 ◽

Cited By ~ 12

Author(s):

G. Adolfsson ◽

S.M. Wang ◽

M. Sadeghi ◽

A. Larsson

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

High Performance ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Long Wavelength

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