Scanning capacitance microscopy and spectroscopy applied to local charge modifications and characterization of nitride-oxide-silicon heterostructures

1995 ◽  
Vol 61 (4) ◽  
pp. 357-362 ◽  
Author(s):  
M. Dreyer ◽  
R. Wiesendanger
Keyword(s):  
Scanning Capacitance Microscopy ◽  
Local Charge ◽  
Nitride Oxide ◽  
Silicon Heterostructures

Analysis of an Anomalous CMOS Transistor Exhibiting Drain to Source Leakage—Its Model and Cause

2014 ◽  
Author(s):  
Yuk L. Tsang ◽  
Alex VanVianen ◽  
Xiang D. Wang ◽  
N. David Theodore
Keyword(s):  
Threshold Voltage ◽  
Crystalline Silicon ◽  
Electrical Characterization ◽  
Visual Defect ◽  
Scanning Capacitance Microscopy ◽  
Device Model ◽  
Graphical Simulation ◽  
Cmos Transistor

Abstract In this paper, we report a device model that has successfully described the characteristics of an anomalous CMOS NFET and led to the identification of a non-visual defect. The model was based on detailed electrical characterization of a transistor exhibiting a threshold voltage (Vt) of about 120mv lower than normal and also exhibiting source to drain leakage. Using a simple graphical simulation, we predicted that the anomalous device was a transistor in parallel with a resistor. It was proposed that the resistor was due to a counter doping defect. This was confirmed using Scanning Capacitance Microscopy (SCM). The dopant defect was shown by TEM imaging to be caused by a crystalline silicon dislocation.

Synthesis and Characterization of Magnesium Vanadates as Potential Mg-ion Cathode Materials Through an Ab Initio Guided Carbothermal Reduction Approach

2021 ◽  
Author(s):  
Jeongjae Lee ◽  
Sunita Dey ◽  
Siân Dutton ◽  
Clare Grey
Keyword(s):  
Transition Metal ◽  
Ab Initio ◽  
Transition Metal Oxides ◽  
Solid State Nmr ◽  
Local Charge ◽  
Synthesis Strategy ◽  
Specific Complex ◽  
Magnesium Vanadates ◽  
Synthesis Approach

Many technologically relevant transition metal oxides for advanced energy storage and catalysis feature reduced transition metal (TM) oxides and are often nontrivial to prepare because of the need to control the reducing nature of the atmosphere in which they are synthesized. In this work, we show that an ab initio predictive synthesis strategy can be used to produce multiple gram-scale products of various MgVxOy-type phases (δ-MgV2O5, spinel MgV2O4, and MgVO3) containing V3+ or V4+ relevant for Mg-ion battery cathodes. Characterization of these phases using 25Mg solid-state NMR spectroscopy illustrates the potential of 25Mg NMR for studying reversible magnesiation and local charge distributions. Rotor-Assisted Population Transfer is used as a much needed signal-to-noise enhancement technique. The ab initio guided synthesis approach is seen as a step forward towards a predictive synthesis strategy for targeting specific complex TM oxides with variable oxidation states of technological importance.

Characterization of local charge distribution of polyethylene terephthalate film and influence as a graphene substrate

2013 ◽  
Vol 103 (3) ◽  
pp. 033107 ◽  
Author(s):  
Won-Hwa Park ◽  
Seok Hwan Noh ◽  
Min Ho Joo ◽  
Tae Hyeong Kim ◽  
Wonbae Park ◽  
...  
Keyword(s):  
Charge Distribution ◽  
Polyethylene Terephthalate ◽  
Polyethylene Terephthalate Film ◽  
Local Charge

Characterization of Polycrystalline Silicon Multilayers with thin Nitride/Oxide Films Using Spectroscopic Ellipsometry

1993 ◽  
Vol 324 ◽  
Author(s):  
L.M. Asinovsky
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Strongly Correlated ◽  
Si Substrate ◽  
Lorentz Oscillator ◽  
Pressure Chemical ◽  
Complete Recrystallization ◽  
Nitride Oxide

AbstractSpectroscopic ellipsometry has been used to characterize oxide/poly-Si/oxide with thin nitride/oxide layer. Films were deposited on Si substrate using low-pressure chemical vapor deposition (LPCVD) techniques. The measurements were taken at angles of incidence of 65 and 70 degrees in the wavelength range from 300 to 800 nm. The analysis of the data using effective medium and two-dimensional Lorentz oscillator approximations identified complete recrystallization of the poly-Si after annealing and and its transformation to µ c-Si. Three wafers taken at the sequential stages of the manufacturing process were studied. Although parameters of the thin nitride/oxide layers are strongly correlated, reasonable estimates of the thicknesses were found. The resuilts were consistent with the measured Auger electron spectroscopy (AES) profiles.

scholarly journals Scanning capacitance microscopy characterization of AIIIBV epitaxial layers

2016 ◽  
Vol 34 (4) ◽  
pp. 845-850 ◽  
Author(s):  
Adam Szyszka ◽  
Michał Obłąk ◽  
Tomasz Szymański ◽  
Mateusz Wośko ◽  
Wojciech Dawidowski ◽  
...  
Keyword(s):  
Solar Cell ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Tandem Solar Cell ◽  
Quantitative Characterization ◽  
High Electron Mobility ◽  
Scanning Capacitance Microscopy ◽  
Transistor Fabrication ◽  
Microscopy Characterization

AbstractThe applicability of scanning capacitance microscopy (SCM) technique for chosen electrical properties characterization of AIIIBV structures fabricated by Metalorganic Vapor Phase Epitaxy (MOVPE) was examined. The calibration curves for quantitative characterization of doping levels in GaAs layers were created. The AlGaN/GaN/Si heterostructures for high electron mobility transistor fabrication and InGaAs tunnel junction for tandem solar cell characterization were presented. The crucial factors of measurement conditions which could influence the obtained results were also discussed.

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