scholarly journals Semiconductor Electronics. Characterization of Semiconductor Materials at Sub-Micron Scale Using Scanning Capacitance Microscopy.

2002 ◽  
Vol 51 (9) ◽  
pp. 995-998
Author(s):  
Takayuki UCHIHASHI ◽  
Yoshimori ISHIZUKA ◽  
Haruhiko YOSHIDA ◽  
Seigo KISHINO
Keyword(s):  
Semiconductor Materials ◽  
Scanning Capacitance Microscopy ◽  
Semiconductor Electronics

Analysis of an Anomalous CMOS Transistor Exhibiting Drain to Source Leakage—Its Model and Cause

2014 ◽  
Author(s):  
Yuk L. Tsang ◽  
Alex VanVianen ◽  
Xiang D. Wang ◽  
N. David Theodore
Keyword(s):  
Threshold Voltage ◽  
Crystalline Silicon ◽  
Electrical Characterization ◽  
Visual Defect ◽  
Scanning Capacitance Microscopy ◽  
Device Model ◽  
Graphical Simulation ◽  
Cmos Transistor

Abstract In this paper, we report a device model that has successfully described the characteristics of an anomalous CMOS NFET and led to the identification of a non-visual defect. The model was based on detailed electrical characterization of a transistor exhibiting a threshold voltage (Vt) of about 120mv lower than normal and also exhibiting source to drain leakage. Using a simple graphical simulation, we predicted that the anomalous device was a transistor in parallel with a resistor. It was proposed that the resistor was due to a counter doping defect. This was confirmed using Scanning Capacitance Microscopy (SCM). The dopant defect was shown by TEM imaging to be caused by a crystalline silicon dislocation.

scholarly journals On-Chip Thermal Insulation Using Porous GaN

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 776 ◽  
Author(s):  
Bogdan F. Spiridon ◽  
Peter H. Griffin ◽  
John C. Jarman ◽  
Yingjun Liu ◽  
Tongtong Zhu ◽  
...  
Keyword(s):  
Thermal Insulation ◽  
High Speed ◽  
Thermal Characterization ◽  
Semiconductor Materials ◽  
3Ω Method ◽  
Theoretical Predictions ◽  
Order Of Magnitude ◽  
On Chip ◽  
Fundamental Requirement

This study focuses on the thermal characterization of porous gallium nitride (GaN) usingan extended 3ω method. Porous semiconductor materials provide a solution to the need for on-chipthermal insulation, a fundamental requirement for low-power, high-speed and high-accuracythermal sensors. Thermal insulation is especially important in GaN devices, due to the intrinsicallyhigh thermal conductivity of the material. The results show one order of magnitude reduction inthermal conductivity, from 130 W/mK to 10 W/mK, in line with theoretical predictions for porousmaterials. This achievement is encouraging in the quest for integrating sensors with opto-, powerandRF-electronics on a single GaN chip.

Effect of Electrical Resistance of TiO2 Layer Characteristics of Dye Sensitized Solar Cell Using Chlorophyll as a Sensitizer

2019 ◽  
Vol 966 ◽  
pp. 422-427
Author(s):  
Nurrisma Puspitasari ◽  
Nurul Yanti Cahaya ◽  
Gatut Yudoyono ◽  
Gontjang Prajitno ◽  
Darminto
Keyword(s):  
Anatase Phase ◽  
Electrical Characterization ◽  
Electrical Energy ◽  
Semiconductor Materials ◽  
Precipitation Method ◽  
Dye Sensitized ◽  
The Third ◽  
Conductive Glass ◽  
Co Precipitation

The third generation of solar cells found by Gratzel in 1991 was called Dye-sensitized Solar Sell (DSSC). DSSC is composed of five parts, namely transparent conductive glass as a substrat; titanium dioxide as a semiconductor materials; chlorophyll as a dye sensitizer, carbon as a catalyst which can convert energy of light into electrical energy. Characterization of DSSC will be carried out in this research covering electrical characterization using RLC meter & I-V meter, optical characterization using Spectrophotometer. TiO2 nanoparticle in in anatase phase having size of 13 nm used in this experiment was synthesized by co-precipitation method. Photoanode with thickness of 10 μm has the lowest resistance compared to the other thickness of 30 μm and 50 μm. The device applying photoanode of 10 μm shows the highest efficiency up to 0.1141 %, while those with other thicknesses respectively gives 0.0378%, and 0,0283%, revealing the efficiency becomes lower with the increasing thickness of TiO2.

scholarly journals Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Ju-Hung Chen ◽  
Sheng-Kuei Chiu ◽  
Jin-De Luo ◽  
Shu-Yu Huang ◽  
Hsiang-An Ting ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Transport ◽  
Deposition Process ◽  
Semiconductor Materials ◽  
Functionalized Graphene ◽  
Significant Progress ◽  
Graphene Glass ◽  
Comprehensive Characterization

Abstract Despite significant progress in the fabrication and application of semiconductor materials for optical emitters and sensors, few materials can cover the cyan-gap between 450 and 500 nm. We here introduce a robust and facile method to deposit amorphous Sb2S3 films with a bandgap of 2.8 eV. By exploiting the tunable functionality of graphene, a two-dimensional material, efficient deposition from a chemical was achieved. Ozone-generated defects in the graphene were shown to be required to enhance the morphology and quality of the material and comprehensive characterization of the seed layer and the Sb2S3 film were applied to design an optimal deposition process. The resulting material exhibits efficient carrier transport and high photodetector performance as evidenced by unprecedented responsivity and detectivity in semiconductor/graphene/glass vertical heterostructures. (112 A/W, 2.01 × 1012 Jones, respectively).

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