Characterization of local charge distribution of polyethylene terephthalate film and influence as a graphene substrate

2013 ◽  
Vol 103 (3) ◽  
pp. 033107 ◽  
Author(s):  
Won-Hwa Park ◽  
Seok Hwan Noh ◽  
Min Ho Joo ◽  
Tae Hyeong Kim ◽  
Wonbae Park ◽  
...  
Keyword(s):  
Charge Distribution ◽  
Polyethylene Terephthalate ◽  
Polyethylene Terephthalate Film ◽  
Local Charge

Characterization of the spatial charge distribution in local charge-trapping memory devices using the charge-pumping technique

2004 ◽  
Vol 48 (9) ◽  
pp. 1525-1530 ◽  
Author(s):  
Maarten Rosmeulen ◽  
Laurent Breuil ◽  
Martino Lorenzini ◽  
Luc Haspeslagh ◽  
Jan Van Houdt ◽  
...  
Keyword(s):  
Charge Distribution ◽  
Charge Trapping ◽  
Memory Devices ◽  
Charge Pumping ◽  
Local Charge ◽  
Spatial Charge ◽  
Charge Trapping Memory

Strain-optical behavior of polyethylene terephthalate film during uniaxial stretching investigated by Mueller matrix ellipsometry

Polymer ◽  
2019 ◽  
Vol 182 ◽  
pp. 121842
Author(s):  
Zhikang Zhou ◽  
Hao Jiang ◽  
Honggang Gu ◽  
Xiuguo Chen ◽  
Haiyan Peng ◽  
...  
Keyword(s):  
Polyethylene Terephthalate ◽  
Mueller Matrix ◽  
Uniaxial Stretching ◽  
Polyethylene Terephthalate Film ◽  
Optical Behavior

Change in optical properties of polyethylene terephthalate film irradiated with 25–150 keV protons

1973 ◽  
Vol 34 (4) ◽  
pp. 374-375
Author(s):  
S. P. Kapchigashev ◽  
V. P. Kovalev ◽  
V. A. Sokolov ◽  
É. S. Barkhatov
Keyword(s):  
Optical Properties ◽  
Polyethylene Terephthalate ◽  
Polyethylene Terephthalate Film

Microstructure and Local Charge Distribution in Hydrogenated Nanocrystalline Silicon under Illumination Studied by Electrostatic Force Microscopy.

2013 ◽  
Vol 1493 ◽  
pp. 201-206
Author(s):  
Rubana Bahar Priti ◽  
Venkat Bommisetty
Keyword(s):  
Grain Boundaries ◽  
Charge Distribution ◽  
Bias Voltage ◽  
Electrostatic Force ◽  
Nanocrystalline Silicon ◽  
Electrostatic Force Microscopy ◽  
Strained Si ◽  
Force Microscopy ◽  
Local Charge ◽  
Before And After

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) is a promising absorber material for photovoltaic applications. Nanoscale electrical conductivity and overall electronic quality of this material are significantly affected by film microstructure, specifically the density and dimension of grains and grain-boundaries (GB). Local charge distribution at grains and grain/GB interfaces of nc-Si:H was studied by Electrostatic Force Microscopy (EFM) in constant force mode under illumination of white LED. Bias voltage from -3V to +3V was applied on the tip. Scanning Kelvin Force (KFM) images were taken before and after illumination to study the change in surface photovoltage (SP). EFM and KFM analysis were combined with film topography to draw a correlation between surface morphology and nanoscale charge distribution in this material. After illumination, small blister like structures were observed whose size and density increase with time. Raman spectroscopy confirmed these new structures as nanocrystalline silicon. This change was assumed due to relaxation of strained Si-Si bonds as an effect of photo response. Nanocrystalline grain interiors were at lower potential and amorphous grain boundaries were at higher potential for negative bias; it was opposite for positive bias. Change in polarity in bias voltage reversed the polarity of the potential in grains and GBs indicating the dominance of negative type of defects. Further study with current sensing AFM in dark and illumination with variable bias voltages will be able to identify the type and density of defects in grains and grain/GB interfaces.

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