55 nm gate ion-implanted GaN-HEMTs on sapphire and Si substrates

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2410-2412 ◽  
Author(s):  
Hideo Katayose ◽  
Masanao Ohta ◽  
Kazuki Nomoto ◽  
Norio Onojima ◽  
Tohru Nakamura
Keyword(s):  
Si Substrates ◽  
Gan Hemts ◽  
Ion Implanted

Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer

2020 ◽  
Vol 41 (10) ◽  
pp. 1480-1483
Author(s):  
Arijit Bose ◽  
Debaleen Biswas ◽  
Shigeomi Hishiki ◽  
Sumito Ouchi ◽  
Koichi Kitahara ◽  
...  
Keyword(s):  
Nitride Layer ◽  
Low Resistivity ◽  
Si Substrates ◽  
Gan Hemts

Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts

2007 ◽  
Vol 43 (25) ◽  
pp. 1466 ◽  
Author(s):  
Y. Pei ◽  
F. Recht ◽  
N. Fichtenbaum ◽  
S. Keller ◽  
S.P. DenBaars ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Deep Submicron ◽  
Gan Hemts ◽  
Ion Implanted

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications

2013 ◽  
Vol 53 (9-11) ◽  
pp. 1444-1449 ◽  
Author(s):  
Clément Fleury ◽  
Rimma Zhytnytska ◽  
Sergey Bychikhin ◽  
Mattia Cappriotti ◽  
Oliver Hilt ◽  
...  
Keyword(s):  
Si Substrates ◽  
Gan Hemts

Al‐O complex formation in ion implanted Czochralski and floating‐zone Si substrates

1993 ◽  
Vol 62 (4) ◽  
pp. 393-395 ◽  
Author(s):  
A. La Ferla ◽  
L. Torrisi ◽  
G. Galvagno ◽  
E. Rimini ◽  
G. Ciavola ◽  
...  
Keyword(s):  
Complex Formation ◽  
Floating Zone ◽  
Si Substrates ◽  
Ion Implanted

Growth Characteristics of AlGaN/GaN HEMTs on Patterned Si (111) Substrates Using Double AlN Interlayers by MOCVD

2011 ◽  
Vol 396-398 ◽  
pp. 372-375 ◽  
Author(s):  
Yong Wang ◽  
Nai Sen Yu ◽  
Cong Shun Wang ◽  
Kei May Lau
Keyword(s):  
Chemical Vapor ◽  
High Electron Mobility Transistors ◽  
Growth Conditions ◽  
Growth Characteristics ◽  
Organic Chemical ◽  
High Electron ◽  
Si Substrates ◽  
Electron Mobility Transistors ◽  
Thermal Expansion Coefficients ◽  
Gan Hemts

AlGaN/GaN high electron mobility transistors (HEMTs) were grown on un-patterned, patterned without mask, and patterned with mask Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The patterns on the Si substrates were fabricated by SiO2 masks and wet etching. Double AlN interlayers grown at high temperature were employed to relax the tensile stress induced by the large mismatches in the lattice constants and the thermal expansion coefficients. Growth characteristics of AlGaN/GaN HEMTs were discussed and analyzed. Before achieving optimized growth conditions, more cracking lines were observed on patterns along the [1-100] orientation than along the [11-20] orientation, resulted from more stable GaN (1-100) facets than GaN (11-20) facets. It is suggested that long patterns should be made along the [11-20] orientation. Micro-Raman measurements showed that Raman shifts at the concave corners are bigger than those at the convex corners, indicating the presence of the larger stress at the concave corners.

Sign in / Sign up

Export Citation Format

Share Document