Reduction of on-resistance in ion-implanted GaN/AlGaN/GaN HEMTs with low gate leakage current

2010 ◽  
Vol 93 (6) ◽  
pp. 19-24 ◽  
Author(s):  
Kazuki Nomoto ◽  
Masataka Satoh ◽  
Tohru Nakamura
Keyword(s):  
Leakage Current ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts ◽  
Ion Implanted

Effect of SiN:H x passivation layer on the reverse gate leakage current in GaN HEMTs

2018 ◽  
Vol 27 (9) ◽  
pp. 097309 ◽  
Author(s):  
Sheng Zhang ◽  
Ke Wei ◽  
Yang Xiao ◽  
Xiao-Hua Ma ◽  
Yi-Chuan Zhang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Passivation Layer ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts

Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer

2019 ◽  
Vol 114 (1) ◽  
pp. 013503 ◽  
Author(s):  
Sheng Zhang ◽  
Ke Wei ◽  
Xiao-Hua Ma ◽  
Bin Hou ◽  
Guo-Guo Liu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Passivation Layer ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched InAlN/GaN HEMTs

2015 ◽  
Vol 36 (12) ◽  
pp. 1281-1283 ◽  
Author(s):  
Dawei Yan ◽  
Jian Ren ◽  
Guofeng Yang ◽  
Shaoqing Xiao ◽  
Xiaofeng Gu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts ◽  
Lattice Matched

scholarly journals Design of Hybrid Schottky-Ohmic Gate in Normally-Off p-GaN Gate AlGaN/GaN HEMTs

2021 ◽  
Author(s):  
Wen-Shiuan Tsai ◽  
Zhen-Wei Qin ◽  
Yue-ming Hsin
Keyword(s):  
Leakage Current ◽  
Drain Current ◽  
Contact Length ◽  
Optimal Performance ◽  
Hole Injection ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gate Structure ◽  
Left And Right ◽  
Gan Hemts

Abstract This study proposes three hybrid Schottky-ohmic gate structures for normally-off p-GaN gate AlGaN/GaN HEMTs. One has a Schottky-gate cover on the ohmic-gate and has part of the area contact to the p-GaN surface at the left and right sides of ohmic-gate (Structure A). The two others only have the Schottky-gate contact to the p-GaN surface at the left side (Structure B) or right side (Structure C) of the ohmic-gate. Different gate metal designs change the hole injection from p-GaN to GaN channel and show various gate leakages. The optimized contact length of Schottky-gate can suppress on-state gate leakage current over two orders of magnitude compared to conventional ohmic p-GaN gate HEMT. The improved on-state maximum drain current is over 60 mA/mm compared to Schottky p-GaN gate HEMT. Optimal performance in Structure B with Schottky-gate contact length ranges from 0.8 to 1.8 μm in a 2 μm gate geometry.

Charge-Based Compact Model of Gate Leakage Current for AlInN/GaN and AlGaN/GaN HEMTs

2020 ◽  
Vol 67 (3) ◽  
pp. 834-840 ◽  
Author(s):  
Ankur Debnath ◽  
Nandita DasGupta ◽  
Amitava DasGupta
Keyword(s):  
Leakage Current ◽  
Compact Model ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts

Investigation of Gate Degradation Characteristics of AlGaN/GaN HEMTs under PWM Stress

2013 ◽  
Vol 732-733 ◽  
pp. 1255-1260
Author(s):  
Chen Chen ◽  
Gang Xie ◽  
Ceng Tang ◽  
Kuang Sheng
Keyword(s):  
Electric Field ◽  
Leakage Current ◽  
Threshold Voltage ◽  
Switching Frequency ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gate Electrode ◽  
Surface Electric Field ◽  
Gan Hemts ◽  
Operation Frequency

An investigation of gate degradation characteristics of AlGaN/GaN HEMTs under PWM stress is proposed in this paper. The device under testing features double source-connected field plates to reshape the surface electric field. A PWM signal with the operation frequency varied from 10 kHz to 1 MHz was applied to the gate electrode while the source was shorted to ground. HP 4155B was used to measure the gate characteristic of the device by every 30 minutes. The value of on-resistance shows an increase of 12.9 % after the device has been under stress for 30 minutes with the switching frequency of 10 kHz and the degradation is improved with higher switching frequency, while the threshold voltage and gate leakage current do not change significantly during the test.

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