Physical Model of RF Leakage in GaN HEMTs on Si Substrates Based on Atomic Diffusion Analysis at Buffer/Substrate Interface

2016 ◽  
Author(s):  
Yutaro Yamaguchi ◽  
Jun Kamioka ◽  
Shintaro Shinjo ◽  
Koji Yamanaka ◽  
Toshiyuki Oishi
Keyword(s):  
Physical Model ◽  
Atomic Diffusion ◽  
Substrate Interface ◽  
Si Substrates ◽  
Diffusion Analysis ◽  
Gan Hemts

scholarly journals Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias

2006 ◽  
Vol 55 (7) ◽  
pp. 3622
Author(s):  
Hao Yue ◽  
Han Xin-Wei ◽  
Zhang Jin-Cheng ◽  
Zhang Jin-Feng
Keyword(s):  
Physical Model ◽  
Dc Bias ◽  
Gan Hemts ◽  
Current Slump

Influence of Interface States on Output Characteristics of 4H-SiC MESFETs on Semi–Insulating Substrates

2000 ◽  
Vol 640 ◽  
Author(s):  
Nabil Sghaier ◽  
Abdel K. Souifi ◽  
Jean-Marie Bluet ◽  
Manuel Berenguer ◽  
Gérard Guillot ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Frequency Dispersion ◽  
Buffer Layers ◽  
Si Substrate ◽  
Substrate Interface ◽  
Si Substrates ◽  
Kink Effect ◽  
Parasitic Effect ◽  
Output Characteristics ◽  
Output Conductance

ABSTRACTThe aim of this work is to study the origin of parasitic phenomena in the output characteristics of 4H-SiC MESFETs on semi-insulating (SI) substrates with various buffer layers. Ids-Vds measurements as a function of temperature have first been performed. Different parasitic effects such as kink effect, hysteresis effect when the gate voltage is successively increased or decreased, or changes in the output characteristics after a high drain polarization are presented. Random Telegraph Signal (RTS) measurements and frequency dispersion of the output conductance have next been realized. From the obtained results, we propose that the parasitic effect on the output characteristics are correlated with the presence of deep levels located near the semi -insulating substrate interface. The main observed trap is tentatively attributed to the presence of Vanadium in the SI substrate.

Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer

2020 ◽  
Vol 41 (10) ◽  
pp. 1480-1483
Author(s):  
Arijit Bose ◽  
Debaleen Biswas ◽  
Shigeomi Hishiki ◽  
Sumito Ouchi ◽  
Koichi Kitahara ◽  
...  
Keyword(s):  
Nitride Layer ◽  
Low Resistivity ◽  
Si Substrates ◽  
Gan Hemts

Thermal Stability of Cu/Si (111) Films Prepared by Ionized Cluster Beam Technique

2011 ◽  
Vol 287-290 ◽  
pp. 2369-2372
Author(s):  
Bo Cao ◽  
Yan Hui Jia ◽  
Gong Ping Li ◽  
Seong Jin Cho ◽  
Hee Kim
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Interface Reaction ◽  
Atomic Diffusion ◽  
Cluster Beam ◽  
Copper Silicide ◽  
Cu Films ◽  
Si Substrates ◽  
Before And After ◽  
Different Temperatures ◽  
Cluster Beams

The Cu films were deposited on P type Si (111) substrates by ionized cluster beam (ICB) technique. The interface reaction and atomic diffusion of Cu/Si (111) system were studied at different annealing temperatures by X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results were obtained: For the Cu/Si (111) samples prepared by ionized cluster beams atVa=3 kV, the interdiffusion of Cu and Si atoms occurred in the as deposited samples. The RBS spectra features were changed with a very small extent with increasing the annealing temperature. There are no copper-silicide phases observed by XRD before and after being annealed at different temperatures. The reason may be that there is a thermally stable interface between Cu films and Si substrates formed.

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications

2013 ◽  
Vol 53 (9-11) ◽  
pp. 1444-1449 ◽  
Author(s):  
Clément Fleury ◽  
Rimma Zhytnytska ◽  
Sergey Bychikhin ◽  
Mattia Cappriotti ◽  
Oliver Hilt ◽  
...  
Keyword(s):  
Si Substrates ◽  
Gan Hemts

Growth Characteristics of AlGaN/GaN HEMTs on Patterned Si (111) Substrates Using Double AlN Interlayers by MOCVD

2011 ◽  
Vol 396-398 ◽  
pp. 372-375 ◽  
Author(s):  
Yong Wang ◽  
Nai Sen Yu ◽  
Cong Shun Wang ◽  
Kei May Lau
Keyword(s):  
Chemical Vapor ◽  
High Electron Mobility Transistors ◽  
Growth Conditions ◽  
Growth Characteristics ◽  
Organic Chemical ◽  
High Electron ◽  
Si Substrates ◽  
Electron Mobility Transistors ◽  
Thermal Expansion Coefficients ◽  
Gan Hemts

AlGaN/GaN high electron mobility transistors (HEMTs) were grown on un-patterned, patterned without mask, and patterned with mask Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The patterns on the Si substrates were fabricated by SiO2 masks and wet etching. Double AlN interlayers grown at high temperature were employed to relax the tensile stress induced by the large mismatches in the lattice constants and the thermal expansion coefficients. Growth characteristics of AlGaN/GaN HEMTs were discussed and analyzed. Before achieving optimized growth conditions, more cracking lines were observed on patterns along the [1-100] orientation than along the [11-20] orientation, resulted from more stable GaN (1-100) facets than GaN (11-20) facets. It is suggested that long patterns should be made along the [11-20] orientation. Micro-Raman measurements showed that Raman shifts at the concave corners are bigger than those at the convex corners, indicating the presence of the larger stress at the concave corners.

Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD

2010 ◽  
Vol 53 (9) ◽  
pp. 1578-1581 ◽  
Author(s):  
Yong Wang ◽  
NaiSen Yu ◽  
DongMei Deng ◽  
Ming Li ◽  
Fei Sun ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Breakdown Voltage ◽  
Si Substrates ◽  
Gan Hemts ◽  
Gan Buffer Layer ◽  
Mg Doped
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