650 V Highly Reliable GaN HEMTs on Si Substrates over Multiple Generations: Matching Silicon CMOS Manufacturing Metrics and Process Control

2016 ◽  
Author(s):  
Saurabh Chowdhury ◽  
YiFeng Wu ◽  
Likun Shen ◽  
Kurt Smith ◽  
Peter Smith ◽  
...  
Keyword(s):  
Process Control ◽  
Multiple Generations ◽  
Si Substrates ◽  
Gan Hemts ◽  
Silicon Cmos

Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer

2020 ◽  
Vol 41 (10) ◽  
pp. 1480-1483
Author(s):  
Arijit Bose ◽  
Debaleen Biswas ◽  
Shigeomi Hishiki ◽  
Sumito Ouchi ◽  
Koichi Kitahara ◽  
...  
Keyword(s):  
Nitride Layer ◽  
Low Resistivity ◽  
Si Substrates ◽  
Gan Hemts

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications

2013 ◽  
Vol 53 (9-11) ◽  
pp. 1444-1449 ◽  
Author(s):  
Clément Fleury ◽  
Rimma Zhytnytska ◽  
Sergey Bychikhin ◽  
Mattia Cappriotti ◽  
Oliver Hilt ◽  
...  
Keyword(s):  
Si Substrates ◽  
Gan Hemts

Growth Characteristics of AlGaN/GaN HEMTs on Patterned Si (111) Substrates Using Double AlN Interlayers by MOCVD

2011 ◽  
Vol 396-398 ◽  
pp. 372-375 ◽  
Author(s):  
Yong Wang ◽  
Nai Sen Yu ◽  
Cong Shun Wang ◽  
Kei May Lau
Keyword(s):  
Chemical Vapor ◽  
High Electron Mobility Transistors ◽  
Growth Conditions ◽  
Growth Characteristics ◽  
Organic Chemical ◽  
High Electron ◽  
Si Substrates ◽  
Electron Mobility Transistors ◽  
Thermal Expansion Coefficients ◽  
Gan Hemts

AlGaN/GaN high electron mobility transistors (HEMTs) were grown on un-patterned, patterned without mask, and patterned with mask Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The patterns on the Si substrates were fabricated by SiO2 masks and wet etching. Double AlN interlayers grown at high temperature were employed to relax the tensile stress induced by the large mismatches in the lattice constants and the thermal expansion coefficients. Growth characteristics of AlGaN/GaN HEMTs were discussed and analyzed. Before achieving optimized growth conditions, more cracking lines were observed on patterns along the [1-100] orientation than along the [11-20] orientation, resulted from more stable GaN (1-100) facets than GaN (11-20) facets. It is suggested that long patterns should be made along the [11-20] orientation. Micro-Raman measurements showed that Raman shifts at the concave corners are bigger than those at the convex corners, indicating the presence of the larger stress at the concave corners.

Integration of GaN HEMTs onto Silicon CMOS by micro Transfer Printing

2016 ◽  
Author(s):  
Ralf Lerner ◽  
Stefan Eisenbrandt ◽  
Christopher Bower ◽  
Salvatore Bonafede ◽  
Alin Fecioru ◽  
...  
Keyword(s):  
Transfer Printing ◽  
Gan Hemts ◽  
Silicon Cmos

Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD

2010 ◽  
Vol 53 (9) ◽  
pp. 1578-1581 ◽  
Author(s):  
Yong Wang ◽  
NaiSen Yu ◽  
DongMei Deng ◽  
Ming Li ◽  
Fei Sun ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Breakdown Voltage ◽  
Si Substrates ◽  
Gan Hemts ◽  
Gan Buffer Layer ◽  
Mg Doped

High temperature performance of AlGaN/GaN HEMTs on Si substrates

2006 ◽  
Vol 50 (3) ◽  
pp. 511-513 ◽  
Author(s):  
W.S. Tan ◽  
M.J. Uren ◽  
P.W. Fry ◽  
P.A. Houston ◽  
R.S. Balmer ◽  
...  
Keyword(s):  
High Temperature ◽  
Si Substrates ◽  
Temperature Performance ◽  
Gan Hemts

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1687-1691 ◽  
Author(s):  
Clément Fleury ◽  
Mattia Capriotti ◽  
Matteo Rigato ◽  
Oliver Hilt ◽  
Joachim Würfl ◽  
...  
Keyword(s):  
High Temperature ◽  
Si Substrates ◽  
Gan Hemts
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