Al‐O complex formation in ion implanted Czochralski and floating‐zone Si substrates

1993 ◽  
Vol 62 (4) ◽  
pp. 393-395 ◽  
Author(s):  
A. La Ferla ◽  
L. Torrisi ◽  
G. Galvagno ◽  
E. Rimini ◽  
G. Ciavola ◽  
...  
Keyword(s):  
Complex Formation ◽  
Floating Zone ◽  
Si Substrates ◽  
Ion Implanted

scholarly journals Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates

2004 ◽  
Vol 45 (8) ◽  
pp. 2644-2646 ◽  
Author(s):  
Junji Yamanaka ◽  
Kentaro Sawano ◽  
Kiyokazu Nakagawa ◽  
Kumiko Suzuki ◽  
Yusuke Ozawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Si Substrates ◽  
Induced Defects ◽  
Ion Implanted

scholarly journals Mechanical strength and microstructure of oxygen ion-implanted Al films

1994 ◽  
Vol 9 (2) ◽  
pp. 318-327 ◽  
Author(s):  
S. Bader ◽  
P.A. Flinn ◽  
E. Arzt ◽  
W.D. Nix
Keyword(s):  
Grain Size ◽  
Mechanical Strength ◽  
Grain Structure ◽  
Coarse Grained ◽  
Si Substrates ◽  
Oxygen Ion ◽  
Deformation Properties ◽  
Oxide Particles ◽  
Particle Strengthening ◽  
Ion Implanted

The influence of finely dispersed, stable particles on the mechanical strength and microstructure of Al films on Si substrates has been studied. Aluminum oxide particles were produced in Al films by oxygen ion implantation, and the grain size was increased by a laser reflow treatment. Transmission electron microscopy (TEM) was employed to observe the oxide particles and the grain structure in the films after subsequent annealing, and the wafer curvature technique was used to study the deformation properties of the films as a function of temperature. Significant particle strengthening was obtained in the coarse-grained films in tension as well as in compression. In the as-deposited and ion-implanted films a very fine grain size of only 0.35 μm is stabilized after annealing which causes considerable softening of the film in compression at higher temperature because of the enhancement of grain boundary and volume diffusion controlled relaxation mechanisms. However, in tension at low temperature these films show high stresses comparable to those of the laser reflowed and ion-implanted films. The results are discussed in the light of TEM observations.

Temperature and dose dependence of defect complex formation with ion implanted Mn/Fe in ZnO

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4820-4822 ◽  
Author(s):  
T.E. Mølholt ◽  
R. Mantovan ◽  
H.P. Gunnlaugsson ◽  
K. Bharuth-Ram ◽  
M. Fanciulli ◽  
...  
Keyword(s):  
Complex Formation ◽  
Dose Dependence ◽  
Defect Complex ◽  
Ion Implanted

Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates

2004 ◽  
Vol 85 (13) ◽  
pp. 2514-2516 ◽  
Author(s):  
K. Sawano ◽  
S. Koh ◽  
Y. Shiraki ◽  
Y. Ozawa ◽  
T. Hattori ◽  
...  
Keyword(s):  
High Quality ◽  
Si Substrates ◽  
Ion Implanted

Characterization of interstitial defect clusters in ion-implanted Si

1997 ◽  
Vol 469 ◽  
Author(s):  
J. L. Benton ◽  
S. Libertino ◽  
S. Coffa ◽  
D. J. Eaglesham
Keyword(s):  
Deep Level ◽  
Extended Defects ◽  
Enhanced Diffusion ◽  
Si Substrates ◽  
Interstitial Defect ◽  
Defect Growth ◽  
Diffusion Phenomena ◽  
Residual Damage ◽  
Transient Spectroscopy ◽  
Ion Implanted

ABSTRACTWe have investigated the properties of Si interstitial clusters in ion implanted crystalline Si. Deep Level Transient Spectroscopy measurements have been used to characterize the residual damage in Si samples implanted with Si ions at fluence in the range 1×109-1×1012/cm2 and annealed at temperatures of 100–700 °C. We have found that, in the fluence and annealing temperature range where extended defects are not formed, the residual damage is dominated by Si interstitial clusters which introduce deep levels at Ev+0.36 eV and at Ev+O-53 eV. By using Si substrates with a different impurity and dopant content, we have found that C, O and B play a role in determining the defect growth kinetics but are not the main constituents of these clusters. We estimate that 40 to 125 Si self intersti-tials are stored in these clusters and believe that they are the main source of Si self-inter-stitials in transient enhanced diffusion phenomena occurring in the absence of {311} or extended defects.

High Resolution TEM of Post-Deposition Ion Implanted C-BN Films

1999 ◽  
Vol 5 (S2) ◽  
pp. 830-831
Author(s):  
T. Dolukhanyan ◽  
S. Gunasekara ◽  
E. Byon ◽  
S.W. Lee ◽  
S.R. Lee ◽  
...  
Keyword(s):  
High Resolution ◽  
Ion Implantation ◽  
Plasma Source ◽  
Si Substrates ◽  
Routine Manner ◽  
Plasma Source Ion Implantation ◽  
High Resolution Tem ◽  
Film Substrate ◽  
Post Deposition ◽  
Ion Implanted

Post-deposition ion implantation of boron nitride (BN) films is to be considered as a powerful method for improvement of adhesion between films and substrates and reduction of compressive stresses, which usually accompany the growth of cubic BN.The goal of this investigation is microcharacterization of as-deposited and ion-implanted BN films to better understand effect of ion implantation on microstructure of the films and film/substrate interface. High Resolution TEM (HF-2000 with field emission gun) has been utilized because of nanocrystalline dimensions of both cubic (c-) and hexagonal (h-) BN phases.BN films have been deposited on (100) oriented Si substrates by magnetically enhanced activated reactive evaporation2. Plasma source ion implantation has been performed to make surface modifications and to improve the adhesion of the films. X/S specimens for TEM and HRTEM have been prepared in a routine manner, using G-1 epoxy for coupling the specimens, Dimpler VCR D500I, and Gatan Precision Ion Polishing System for final thinning.

In-Situ Photoexcitation-Induced Suppression of Point Defect Generation in Ion Implanted Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
C. R. Cho ◽  
N. Yarykin ◽  
G. A. Rozgonyi ◽  
R. A. Zuhr
Keyword(s):  
Complex Formation ◽  
Ion Implantation ◽  
Point Defect ◽  
Charge State ◽  
Defect Generation ◽  
Defect Clusters ◽  
Type Silicon ◽  
P Type ◽  
Ion Implanted

ABSTRACTThe formation of vacancy-related defects in n-type silicon has been studied immediately after implantation of He, Si, or Ge ions at 85 K using in-situ DLTS. A-center concentrations in He-implanted samples reach a maximum immediately after implantation, whereas, with Si or Ge ion implanted samples they continuously increase during subsequent anneals. It is proposed that defect clusters, which emit vacancies during anneals, are generated in the collision cascades of Si or Ge ions. An illumination-induced suppression of A-center formation is seen immediately after implantation of He ions at 85 K. This effect is also observed with Si or Ge ions, but only after annealing. The suppression of vacancy complex formation via photoexcitation is believed to occur due to an enhanced recombination of defects during ion implantation, and results in reduced number of vacancies remaining in the defect clusters. In p-type silicon, a reduction in K-center formation and an enhanced migration of defects are concurrently observed in the illuminated sample implanted with Si ions. These observations are consistent with a model where the injection of excess carriers modifies the defect charge state and impacts their diffusion.

Modelling of point defect complex formation and its application to H+ ion implanted silicon

2015 ◽  
Vol 99 ◽  
pp. 187-195 ◽  
Author(s):  
N. Cherkashin ◽  
F.-X. Darras ◽  
P. Pochet ◽  
S. Reboh ◽  
N. Ratel-Ramond ◽  
...  
Keyword(s):  
Complex Formation ◽  
Point Defect ◽  
Defect Complex ◽  
Ion Implanted

55 nm gate ion-implanted GaN-HEMTs on sapphire and Si substrates

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2410-2412 ◽  
Author(s):  
Hideo Katayose ◽  
Masanao Ohta ◽  
Kazuki Nomoto ◽  
Norio Onojima ◽  
Tohru Nakamura
Keyword(s):  
Si Substrates ◽  
Gan Hemts ◽  
Ion Implanted

In Situ Stress Measurements During GaN Growth on Ion-Implanted AlN/Si Substrates

2011 ◽  
Vol 41 (5) ◽  
pp. 865-872 ◽  
Author(s):  
Jarod C. Gagnon ◽  
Mihir Tungare ◽  
Xiaojun Weng ◽  
Jeffrey M. Leathersich ◽  
Fatemeh Shahedipour-Sandvik ◽  
...  
Keyword(s):  
In Situ Stress ◽  
Stress Measurements ◽  
Si Substrates ◽  
In Situ Stress Measurements ◽  
Ion Implanted
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