Optical and morphological properties of SiNx/Si amorphous multilayer structures grown by Plasma Enhanced Chemical Vapor Deposition

2005 ◽  
Vol 2 (10) ◽  
pp. 3698-3701 ◽  
Author(s):  
G. Santana ◽  
O. de Melo ◽  
J. Aguilar-Hernández ◽  
B. M. Monroy ◽  
J. Fandiño ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Morphological Properties ◽  
Multilayer Structures

scholarly journals Low-Humidity Sensing Properties of Multi-Layered Graphene Grown by Chemical Vapor Deposition

Sensors ◽  
2020 ◽  
Vol 20 (11) ◽  
pp. 3174 ◽  
Author(s):  
Filiberto Ricciardella ◽  
Sten Vollebregt ◽  
Tiziana Polichetti ◽  
Pasqualina M. Sarro ◽  
Georg S. Duesberg
Keyword(s):  
Chemical Vapor Deposition ◽  
Relative Humidity ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Morphological Properties ◽  
Humidity Sensing ◽  
Sensing Properties ◽  
Force Microscopy ◽  
Sensing Material ◽  
Low Humidity

Humidity sensing is fundamental in some applications, as humidity can be a strong interferent in the detection of analytes under environmental conditions. Ideally, materials sensitive or insensitive towards humidity are strongly needed for the sensors used in the first or second case, respectively. We present here the sensing properties of multi-layered graphene (MLG) upon exposure to different levels of relative humidity. We synthesize MLG by chemical vapor deposition, as shown by Raman spectroscopy, Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). Through an MLG-based resistor, we show that MLG is scarcely sensitive to humidity in the range 30%–70%, determining current variations in the range of 0.005%/%relative humidity (RH) well below the variation induced by other analytes. These findings, due to the morphological properties of MLG, suggest that defective MLG is the ideal sensing material to implement in gas sensors operating both at room temperature and humid conditions.

In situ laser recrystallization of Si layers during low-pressure chemical vapor deposition: Recrystallization dynamics and influence of the seed layer

2002 ◽  
Vol 17 (11) ◽  
pp. 2966-2973 ◽  
Author(s):  
D. Della Sala ◽  
A. Santoni ◽  
L. Fornarini ◽  
J. Lancok ◽  
S. Loreti ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Seed Layer ◽  
Film Surface ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Morphological Properties ◽  
Molten Silicon ◽  
Pressure Chemical

The growth of polycrystalline silicon on glass by low-pressure chemical vapor deposition and in situ laser induced recrystallization was investigated with the aim to study the influence of the seed layer and the mechanism of the recrystallization dynamics on the structural and morphological properties of the grown film. A seed layer was used to trigger the solidification process of many additional in situ laser-crystallized overlayers. One-dimensional calculations of the thermal flow produced by laser irradiation were used to clarify the complex interaction between the substrate and the molten silicon surface layer during nucleation and growth. The experiments show the relevant role played by the seed layer and the peculiar shaping of the film surface due to the preferential aggregation of molten silicon. Compact polysilicon films with thicknesses up to 4 μm with almost monocrystalline grains of 1–2-μm size were obtained.

Photoluminescence properties of SiNx/Si amorphous multilayer structures grown by plasma-enhanced chemical vapor deposition

2006 ◽  
Vol 121 (2) ◽  
pp. 349-352 ◽  
Author(s):  
B.M. Monroy ◽  
G. Santana ◽  
J. Aguilar-Hernández ◽  
A. Benami ◽  
J. Fandiño ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Multilayer Structures ◽  
Photoluminescence Properties

Characterization of plasma-assisted CVD multilayers/heterostructures

1991 ◽  
Vol 49 ◽  
pp. 804-805
Author(s):  
M.G. Burke ◽  
R.M. Young ◽  
C.B. Freidhoff ◽  
W.D. Partlow ◽  
H. Buhay
Keyword(s):  
Thermal Conductivity ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Bandgap ◽  
High Thermal Conductivity ◽  
Multilayer Structures ◽  
Refractory Materials ◽  
Optoelectronic Applications

Amorphous refractory materials can be used in a number of optoelectronic applications when fabricated in multilayer structures. When the layers are deposited with very small thicknesses, heterostructures are produced. Such structures have an adjustable optical bandgap because the wavelength of light is much larger than the distance over which the composition of the film varies (layer to layer). Thicker multilayer structures can be fabricated on metallized, high thermal conductivity substrates. The purpose of the structure is to both protect and modify the substrate's properties. Two types of plasma-assisted chemical vapor deposition (PACVD) techniques have been employed to produce these structures.

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