Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition

2001 ◽  
Vol 79 (21) ◽  
pp. 3449-3451 ◽  
Author(s):  
S. Keller ◽  
S. Heikman ◽  
I. Ben-Yaacov ◽  
L. Shen ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Multilayer Structures ◽  
Surfactant Assisted ◽  
Metalorganic Chemical

Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures

1999 ◽  
Vol 86 (10) ◽  
pp. 5850-5857 ◽  
Author(s):  
S. Keller ◽  
G. Parish ◽  
P. T. Fini ◽  
S. Heikman ◽  
C.-H. Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Effects of the Selenium Precursor on the Growth of ZnSe by Metalorganic Chemical Vapor Deposition

1988 ◽  
Vol 131 ◽  
Author(s):  
Konstantinos P. Giapis ◽  
Lu Da-Cheng ◽  
Klavs F. Jensen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Gaas Substrates ◽  
Downflow Reactor ◽  
Very High ◽  
Metalorganic Chemical

ABSTRACTThe growth of ZnSe on GaAs substrates by metalorganic chemical vapor deposition was investigated in a specially designed vertical downflow reactor. Dimethylzinc was used as the Zn source while different Se source compounds (hydrogen selenide (H2Se), diethylselenide and methylallylselenide) were employed to determine the effect of different source combinations on morphology, thickness uniformity, growth rate, electrical properties and photoluminescence (PL) characteristics of the grown ZnSe films. The H2Se was produced in situ by reaction of H2 and Se followed by distillation to control the amount of H2Se entering the reaction zone. H2Se produced very high mobility films with good PL spectra but poor surface morphology. Diethylselenide led to layers of good morphology and PL characteristics but the films were highly resistive. Unusual surface features were observed for methylallylselenide.

X‐ray microanalysis of InGaAs/InP multilayer structures grown by metalorganic chemical vapor deposition

1989 ◽  
Vol 65 (6) ◽  
pp. 2293-2299 ◽  
Author(s):  
A. J. McGibbon ◽  
J. N. Chapman ◽  
A. G. Cullis ◽  
N. G. Chew ◽  
S. J. Bass ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Multilayer Structures ◽  
X Ray ◽  
Metalorganic Chemical
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