Mechanism of vertical correlation in Ge/Si(001) islands multilayer structures by chemical vapor deposition

2007 ◽  
Vol 102 (11) ◽  
pp. 113504
Author(s):  
V. Yam ◽  
D. Débarre ◽  
D. Bouchier ◽  
J.-Y. Laval
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Multilayer Structures ◽  
Vertical Correlation

Optical and morphological properties of SiNx/Si amorphous multilayer structures grown by Plasma Enhanced Chemical Vapor Deposition

2005 ◽  
Vol 2 (10) ◽  
pp. 3698-3701 ◽  
Author(s):  
G. Santana ◽  
O. de Melo ◽  
J. Aguilar-Hernández ◽  
B. M. Monroy ◽  
J. Fandiño ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Morphological Properties ◽  
Multilayer Structures

Photoluminescence properties of SiNx/Si amorphous multilayer structures grown by plasma-enhanced chemical vapor deposition

2006 ◽  
Vol 121 (2) ◽  
pp. 349-352 ◽  
Author(s):  
B.M. Monroy ◽  
G. Santana ◽  
J. Aguilar-Hernández ◽  
A. Benami ◽  
J. Fandiño ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Multilayer Structures ◽  
Photoluminescence Properties

Characterization of plasma-assisted CVD multilayers/heterostructures

1991 ◽  
Vol 49 ◽  
pp. 804-805
Author(s):  
M.G. Burke ◽  
R.M. Young ◽  
C.B. Freidhoff ◽  
W.D. Partlow ◽  
H. Buhay
Keyword(s):  
Thermal Conductivity ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Bandgap ◽  
High Thermal Conductivity ◽  
Multilayer Structures ◽  
Refractory Materials ◽  
Optoelectronic Applications

Amorphous refractory materials can be used in a number of optoelectronic applications when fabricated in multilayer structures. When the layers are deposited with very small thicknesses, heterostructures are produced. Such structures have an adjustable optical bandgap because the wavelength of light is much larger than the distance over which the composition of the film varies (layer to layer). Thicker multilayer structures can be fabricated on metallized, high thermal conductivity substrates. The purpose of the structure is to both protect and modify the substrate's properties. Two types of plasma-assisted chemical vapor deposition (PACVD) techniques have been employed to produce these structures.

Deep Levels in Multilayer Structures of Si/Si0.8Ge0.2 Grown by Low-Pressure Chemical Vapor Deposition

2003 ◽  
Vol 799 ◽  
Author(s):  
Yutaka Tokuda ◽  
Kenichi Shirai
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Deep Levels ◽  
Multilayer Structures ◽  
Pressure Chemical ◽  
Transient Spectroscopy ◽  
A Minor

ABSTRACTDeep levels in multilayer structures of ten periods Si/Si0.8Ge0.2 (16/5 nm) grown by low-pressure chemical vapor deposition have been characterized by deep level transient spectroscopy (DLTS). DLTS measurements reveal one dominant peak (E1) at around 130 K with a minor peak (E2) at around 240 K. The dominant trap E1 (Ec – 0.19 eV) is ascribed to the dislocation-related defect. The increase of the E1 concentration by a factor of 2 to 3 and the change of its energy level to Ec – 0.22 eV are observed with annealing up to 120°C. It is speculated that hydrogen incorporated during growth associates with E1 and the behavior of E1 upon annealing is caused by the release of hydrogen from E1.

X‐ray microanalysis of InGaAs/InP multilayer structures grown by metalorganic chemical vapor deposition

1989 ◽  
Vol 65 (6) ◽  
pp. 2293-2299 ◽  
Author(s):  
A. J. McGibbon ◽  
J. N. Chapman ◽  
A. G. Cullis ◽  
N. G. Chew ◽  
S. J. Bass ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Multilayer Structures ◽  
X Ray ◽  
Metalorganic Chemical
Sign in / Sign up

Export Citation Format

Share Document