Investigation of p-type macroporous silicon formation

2005 ◽  
Vol 202 (8) ◽  
pp. 1390-1395 ◽  
Author(s):  
C. Lévy-Clément ◽  
S. Lust ◽  
M. Mamor ◽  
J. Rappich ◽  
Th. Dittrich
Keyword(s):  
2002 ◽  
Vol 92 (12) ◽  
pp. 6966-6972 ◽  
Author(s):  
P. Bettotti ◽  
L. Dal Negro ◽  
Z. Gaburro ◽  
L. Pavesi ◽  
A. Lui ◽  
...  

2012 ◽  
Vol 463-464 ◽  
pp. 1410-1414
Author(s):  
Wei Ying Ou ◽  
Lei Zhao ◽  
Zhao Chen Li ◽  
Hong Wei Diao ◽  
Wen Jing Wang

Macroporous silicon was fabricated by electrochemical etching in hydrogen fluoride (HF) electrolyte on P-type silicon wafers. By optimizing the etching condition, the obtained macroporous silicon presented pore diameter of about 2 μm and pore density of ~107/cm2. Such macroporous silicon gave out an excellent antireflective performance with the reflectance lower than 4% in a wide spectral range of 400-1000 nm. An a-Si:H/c-Si heterojunction solar cell was fabricated on such macroporous silicon to show its application potential.


2013 ◽  
Vol 8 (8) ◽  
pp. 465-469 ◽  
Author(s):  
Mei Wang ◽  
Xiaohong Wang ◽  
Sarmishtha Ghoshal

2002 ◽  
Vol 722 ◽  
Author(s):  
Paolo Bettotti ◽  
Zeno Gaburro ◽  
Luca Dal Negro ◽  
Lorenzo Pavesi

AbstractWe discuss fabrication of macroporous structures, both random and periodical, on p-type silicon samples by electrochemical etching using aqueous and organic electrolytes. We have obtained different lattice structures starting from an unique lithographic mask. Organic compounds used in this work were Dimethylformamide (DMF) and Dimethylsulfoxide (DMSO).


2012 ◽  
Vol 488-489 ◽  
pp. 1343-1347
Author(s):  
Wei Ying Ou ◽  
Lei Zhao ◽  
Zhao Chen Li ◽  
Hong Wei Diao ◽  
Wen Jing Wang

Low cost electrochemical etching method was utilized to prepare macroporous silicon on p-type silicon substrate in dilute HF solution. By optimizing the substrate resistivity, the etching current density, and the etching time, excellent macroporous silicon was obtained on 15 Ω•cm p-type silicon substrate with the pore diameter of about 2 μm, the pore depth of about 30 μm, and the surface pore density up to ~107/cm2. Such macroporous silicon gave out an excellent antireflective performance with the reflectance lower than 4% in a wide spectral range of 400-1000 nm. The low reflectance combined with the deep pore morphology provides an attractive potential to fabricate radial p-n junction solar cells on such macroporous silicon.


2014 ◽  
Vol 5 ◽  
pp. 764-771 ◽  
Author(s):  
S. Haldar ◽  
A. De ◽  
S. Chakraborty ◽  
S. Ghosh ◽  
U. Ghanta

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