Preparation of Large-Aperture Macroporous Silicon with Controllable Pore Tip Angle on Low-Resistivity p-Type c-Si Substrate by Metal-Catalyzed Electrochemical Etching

2013 ◽  
Vol 2 (4) ◽  
pp. Q65-Q68 ◽  
Author(s):  
Zhaochen Li ◽  
Lei Zhao ◽  
Hongwei Diao ◽  
Hailing Li ◽  
Chunlan Zhou ◽  
...  
Keyword(s):  
Electrochemical Etching ◽  
Macroporous Silicon ◽  
Si Substrate ◽  
Low Resistivity ◽  
Large Aperture ◽  
Type C ◽  
Metal Catalyzed ◽  
P Type

Optical Properties of Free-Standing Ultrahigh Porosity Silicon Films Prepared by Supercritical Drying

1996 ◽  
Vol 452 ◽  
Author(s):  
J. Von Behren ◽  
P. M. Fauchet ◽  
E. H. Chimowitz ◽  
C. T. Lira
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Supercritical Drying ◽  
Silicon Films ◽  
Index Of Refraction ◽  
Free Standing ◽  
Crystal Silicon ◽  
Si Substrates ◽  
Type C ◽  
P Type

AbstractHighly luminescent free-standing porous silicon thin films of excellent optical quality have been manufactured by using electrochemical etching and lift-off steps combined with supercritical drying. One to 50 μm thick free-standing layers made from highly (p+) and moderately (p) Boron doped single crystal silicon (c-Si) substrates have been produced with porosities (P) up to 95 %. The Fabry-Pérot fringes observed in the transmission and photoluminescence (PL) spectra are used to determine the refractive index. At the highest P the index of refraction is below 1.2 from the IR to 2 eV. The absorption coefficients follow a nearly exponential behavior in the energy range from 1.2 eV and 4 eV. The porosity corrected absorption spectra of free-standing films made from p type c-Si substrates are blue shifted with respect to those prepared from p+ substrates. For P > 70 % a blue shift is also observed in PL. At equal porosities the luminescence intensities of porous silicon films made from p+ and p type c-Si are different by one order of magnitude.

scholarly journals Optical Properties of Porous Silicon Solar Cells for Use in Transport

2019 ◽  
Vol 21 (3) ◽  
pp. 53-58
Author(s):  
Martin Kralik ◽  
Michaela Hola ◽  
Stanislav Jurecka
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Spectral Reflectance ◽  
High Efficiency ◽  
Electrochemical Etching ◽  
Electrical Potential ◽  
Etching Time ◽  
Si Substrate ◽  
Etching Parameters ◽  
P Type

Porous silicon (pSi) samples were prepared by electrochemical etching of p-type silicon (p-type Si) substrate. Three pSi samples with different parameters of electrochemical etching (electrical potential, etching time, etching current) were prepared and analyzed. We studied the influence of electrochemical etching parameters on spectral reflectance of pSi structure. A modification of interference pattern was observed due to changes of microstructure. We determined the thickness of pSi layers from spectral reflectance. Solar cells with a porous structure achieve high efficiency and long life. These solar cells are predestined for use in transport.

scholarly journals Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs

2019 ◽  
Vol 9 (11) ◽  
pp. 2373 ◽  
Author(s):  
Chunyan Song ◽  
Xuelin Yang ◽  
Panfeng Ji ◽  
Jun Tang ◽  
Shan Wu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Impact Ionization ◽  
Electron Injection ◽  
Depletion Region ◽  
High Electron ◽  
Si Substrate ◽  
Low Resistivity ◽  
Si Substrates ◽  
Vertical Leakage ◽  
P Type

The role of low-resistivity substrate on vertical leakage current (VLC) of AlGaN/GaN-on-Si epitaxial layers has been investigated. AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on both p-type and n-type Si substrates with low resistivity are applied to analyze the vertical leakage mechanisms. The activation energy (Ea) for p-type case is higher than that for n-type at 0–600 V obtained by temperature-dependent current-voltage measurements. An additional depletion region in the region of 0–400 V forms at the AlN/p-Si interface but not for AlN/n-Si. That depletion region leads to a decrease of electron injection and hence effectively reduces the VLC. While in the region of 400–600 V, the electron injection from p-Si substrate increases quickly compared to n-Si substrate, due to the occurrence of impact ionization in the p-Si substrate depletion region. The comparative results indicate that the doping type of low-resistivity substrate plays a key role for VLC.

Macroporous Silicon Fabricated by HF Electrochemical Etching for Antireflective Application in Solar Cells

2012 ◽  
Vol 463-464 ◽  
pp. 1410-1414
Author(s):  
Wei Ying Ou ◽  
Lei Zhao ◽  
Zhao Chen Li ◽  
Hong Wei Diao ◽  
Wen Jing Wang
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Hydrogen Fluoride ◽  
Pore Diameter ◽  
Electrochemical Etching ◽  
Macroporous Silicon ◽  
Pore Density ◽  
Wide Spectral Range ◽  
Application Potential ◽  
P Type

Macroporous silicon was fabricated by electrochemical etching in hydrogen fluoride (HF) electrolyte on P-type silicon wafers. By optimizing the etching condition, the obtained macroporous silicon presented pore diameter of about 2 μm and pore density of ~107/cm2. Such macroporous silicon gave out an excellent antireflective performance with the reflectance lower than 4% in a wide spectral range of 400-1000 nm. An a-Si:H/c-Si heterojunction solar cell was fabricated on such macroporous silicon to show its application potential.

New progress on p-type macroporous silicon electrodissolution

2002 ◽  
Vol 722 ◽  
Author(s):  
Paolo Bettotti ◽  
Zeno Gaburro ◽  
Luca Dal Negro ◽  
Lorenzo Pavesi
Keyword(s):  
Organic Compounds ◽  
Electrochemical Etching ◽  
Lattice Structures ◽  
Macroporous Silicon ◽  
Organic Electrolytes ◽  
Type Silicon ◽  
Lithographic Mask ◽  
P Type

AbstractWe discuss fabrication of macroporous structures, both random and periodical, on p-type silicon samples by electrochemical etching using aqueous and organic electrolytes. We have obtained different lattice structures starting from an unique lithographic mask. Organic compounds used in this work were Dimethylformamide (DMF) and Dimethylsulfoxide (DMSO).

Optimization Study on Preparation of Macroporous Silicon on P-Type Silicon Substrate by Electrochemical Etching

2012 ◽  
Vol 488-489 ◽  
pp. 1343-1347
Author(s):  
Wei Ying Ou ◽  
Lei Zhao ◽  
Zhao Chen Li ◽  
Hong Wei Diao ◽  
Wen Jing Wang
Keyword(s):  
Silicon Substrate ◽  
Electrochemical Etching ◽  
Low Cost ◽  
Attractive Potential ◽  
Etching Time ◽  
Macroporous Silicon ◽  
Type Silicon ◽  
Optimization Study ◽  
P Type ◽  
Pore Depth

Low cost electrochemical etching method was utilized to prepare macroporous silicon on p-type silicon substrate in dilute HF solution. By optimizing the substrate resistivity, the etching current density, and the etching time, excellent macroporous silicon was obtained on 15 Ω•cm p-type silicon substrate with the pore diameter of about 2 μm, the pore depth of about 30 μm, and the surface pore density up to ~107/cm2. Such macroporous silicon gave out an excellent antireflective performance with the reflectance lower than 4% in a wide spectral range of 400-1000 nm. The low reflectance combined with the deep pore morphology provides an attractive potential to fabricate radial p-n junction solar cells on such macroporous silicon.

Utilization of Low Wavelength Laser Linking with Electrochemical Etching to Produce Nano-Scale Porous Layer on p-Type Silicon Wafer with High Luminous Flux

2021 ◽  
Vol 10 (1) ◽  
pp. 016003
Author(s):  
Philip Nathaniel Immanuel ◽  
Chao-Ching Chiang ◽  
Tien-Hsi Lee ◽  
Sikkanthar Diwan Midyeen ◽  
Song-Jeng Huang
Keyword(s):  
Silicon Wafer ◽  
Porous Layer ◽  
Electrochemical Etching ◽  
Luminous Flux ◽  
Nano Scale ◽  
Type Silicon ◽  
P Type

scholarly journals Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs

2016 ◽  
Vol 11 (1) ◽  
Author(s):  
Youcef A. Bioud ◽  
Abderraouf Boucherif ◽  
Ali Belarouci ◽  
Etienne Paradis ◽  
Dominique Drouin ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Electrochemical Etching ◽  
P Type ◽  
Nanoporous Layer

Infrared Oscillators in Conventional Carbon Nanotube FET Technology

2015 ◽  
Vol 24 (04) ◽  
pp. 1550053
Author(s):  
Lobna I'msaddak ◽  
Dalenda Ben Issa ◽  
Abdennaceur Kachouri ◽  
Mounir Samet ◽  
Hekmet Samet
Keyword(s):  
Power Consumption ◽  
Response Time ◽  
Oscillation Frequency ◽  
Ring Oscillator ◽  
Propagation Time ◽  
Type C ◽  
P Type ◽  
Lc Tank ◽  
The Impact ◽  
Carbon Nanotube Fet

This paper presents the design of C-CNTFET oscillator's arrays for infrared 'IR' technology. These arrays are contained by both of the LC-tank and the voltage control 'coupled N- and P-type C-CNTFET LC-tank' oscillators. In this paper, the analysis of the impact of CNT diameter variations and the nonlinear capacitances (C GD and C GS ) were introduced, especially on propagation time, oscillation frequency and power consumption. The C-CNTFET inverter, ring oscillator, LC-tank and coupled N- and P-type C-CNTFET LC-tank oscillator structures were designed and their speeding and performances have been investigated with the proposed n-type of C-CNTFET model supplied by a 0.5 V power voltage. Simulation results show that the n- and p-types LC-tank oscillator circuit designs achieved an approximately equal oscillation frequency, response time and power consumption. Whereas the coupled N- and P-type C-CNTFET LC-tank oscillator has the lowest power consumption equal to 0.13 μW, the highest oscillation frequency (10.08 THz) and the fastest response time (1.81 ps).

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