Radial p-n junction macroporous silicon solar cell on p-type upgraded metallurgical-grade silicon substrate

2012 ◽  
Vol 4 (6) ◽  
pp. 063108 ◽  
Author(s):  
L. Zhao ◽  
Z. C. Li ◽  
H. W. Diao ◽  
H. L. Li ◽  
C. L. Zhou ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Substrate ◽  
Silicon Solar Cell ◽  
Macroporous Silicon ◽  
Metallurgical Grade Silicon ◽  
Grade Silicon ◽  
P Type ◽  
Upgraded Metallurgical Grade Silicon

A 12%-Efficient Upgraded Metallurgical Grade Silicon–Organic Heterojunction Solar Cell Achieved by a Self-Purifying Process

ACS Nano ◽  
2014 ◽  
Vol 8 (11) ◽  
pp. 11369-11376 ◽  
Author(s):  
Jie Zhang ◽  
Tao Song ◽  
Xinlei Shen ◽  
Xuegong Yu ◽  
Shuit-Tong Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Heterojunction Solar Cell ◽  
Metallurgical Grade Silicon ◽  
Grade Silicon ◽  
Upgraded Metallurgical Grade Silicon

Influences of annealing and defect limitation on p-type silicon solar cell

2017 ◽  
Author(s):  
Yu-Hsuan Lin ◽  
Sung-Yu Chen ◽  
Kuen-Yi Wu ◽  
Chien-Hsun Chen ◽  
Chen-Hsun Du ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Type Silicon ◽  
P Type

scholarly journals Study of Internal versus External Gettering of Iron during Slow Cooling Processes for Silicon Solar Cell Fabrication

2009 ◽  
Vol 156-158 ◽  
pp. 387-393 ◽  
Author(s):  
Jasmin Hofstetter ◽  
Jean F. Lelièvre ◽  
Carlos del Cañizo ◽  
Antonio Luque
Keyword(s):  
Solar Cell ◽  
High Temperature ◽  
Silicon Solar Cell ◽  
Iron Concentration ◽  
Electron Lifetime ◽  
Slow Cooling ◽  
Metal Impurities ◽  
Solar Cell Fabrication ◽  
Cell Fabrication ◽  
P Type

The eect of slow cooling after dierent high temperature treatments on the in- terstitial iron concentration and on the electron lifetime of p-type mc-Si wafers has been in- vestigated. The respective impacts of internal relaxation gettering and external segregation gettering of metal impurities during an extended phosphorous diusion gettering are studied. It is shown that the enhanced reduction of interstitial Fe during extended P-gettering is due to an enhanced segregation gettering while faster impurities like Cu and Ni are possibly reduced due to an internal gettering eect.

Photoelectrical and Photovoltaic Peroperties of n-ZnO/p-Si Heterojunction

2011 ◽  
Vol 399-401 ◽  
pp. 1477-1480
Author(s):  
Yan Li Xu ◽  
Jin Hua Li
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Ion Beam ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Textured Surface ◽  
Si Solar Cell ◽  
The One ◽  
P Type

n-ZnO thin films doped In with 2 atm.% were deposited on p-type silicon wafer with textured surface by Ion Beam Enhanced Deposition method, after annealing and prepared front and back electrodes, the n-ZnO/p-Si heterojunction samples were fabricated. The photoelectric property of the sample were measured and compared with silicon solar cell. The result indicated the saturated photocurrent of n-ZnO/p-Si heterojunction was 20% greater than one of the Si solar cell. It means the ZnO/Si heterojunction has a higher ability of produce photoelectron then one of silicon solarcell. The result of the photovoltaic test of n-ZnO/p-Si heterojunction show The open circuit voltage and short-circuit current of the n-ZnO/p-Si heterojunction was 400mV and 5.5mA/cm2 respectively. It was much smaller than the one of silicon solar cells. The reason was discussed

Sign in / Sign up

Export Citation Format

Share Document