p-Type macroporous silicon having three-dimensional structureThis research has been supported partly by Cooperative System for Supporting Priority Research of Japan Science and Technology (JST).

2004 ◽  
pp. 1432 ◽  
Author(s):  
Sung-Ho Lee ◽  
Ryutaro Maeda
Keyword(s):  
Science And Technology ◽  
Three Dimensional ◽  
Macroporous Silicon ◽  
Cooperative System ◽  
P Type

Three-Dimensional Analysis on the Performance of the Thermoelectric Micro-Cooler

2005 ◽  
Author(s):  
Kong Hoon Lee ◽  
Ook Joong Kim
Keyword(s):  
Temperature Difference ◽  
Three Dimensional ◽  
Coefficient Of Performance ◽  
Thermoelectric Cooler ◽  
Small Temperature ◽  
Small Current ◽  
Thermoelectric Element ◽  
Maximum Value ◽  
Column Type ◽  
P Type

Three-dimensional numerical analysis has been carried out using the FEMLAB software package to figure out the performance of the thermoelectric micro-cooler. A small-size and column-type thermoelectric cooler is considered and Bi2Te3 and Sb2Te3 are selected as the n- and p-type thermoelectric materials, respectively. The thickness of the thermoelectric element considered is 5 to 20 μm and the thickness affects the performance of the cooler. The effect of parameters such as the temperature difference, the current, and the thickness of the thermoelectric element on the performance of the cooler has also been investigated. The coefficient of performance (COP) is the primary factor to evaluate the performance of the cooler and the COP varies with the parameters. The COP has the maximum value at a certain current and the value decreases with the temperature difference or the thickness. The predicted results also show that the performance can be improved for thick thermoelectric element at the small temperature difference and small current.

Epilogue

2016 ◽  
pp. 133-136
Author(s):  
William H. Brock
Keyword(s):  
Combinatorial Chemistry ◽  
Science And Technology ◽  
Three Dimensional ◽  
Structural Models ◽  
Service Science ◽  
Carbon Allotropes ◽  
Scientific Disciplines ◽  
Transdisciplinary Science ◽  
The 1960S

The Epilogue concludes with a brief look at some of the exciting, and more positive, aspects of chemistry since the 1960s: the use of computers to study perfect three-dimensional structural models and design new molecules on the screen; combinatorial chemistry; retrosynthesis; the discoveries of the carbon allotropes fullerene and graphene; and nanotechnology. In an age of cross-disciplinary, transdisciplinary science and technology several historians, sociologists, and philosophers of science have queried whether the concept of distinct scientific disciplines like chemistry, physics, and biology serves a purpose any longer. Has chemistry become a service science, or has chemistry taken over these other disciplines?

Embedding of Carbon Nanotubes on p-Type Silicon for Use in Solar Cells and PV Devices

2008 ◽  
Author(s):  
Abhishek Kumar ◽  
Nikhil Dhawan
Keyword(s):  
Carbon Nanotubes ◽  
Solar Cells ◽  
Solar Cell ◽  
Silicon Wafer ◽  
Three Dimensional ◽  
The Sun ◽  
Future Prospects ◽  
Nanotube Bundles ◽  
Type Silicon ◽  
P Type

Carbon nanotube bundles were precisely grown atop a p-type silicon wafer that had been treated with catalysts to produce geometries that resemble three-dimensional nano-models to extract more power from the sun. The embedded carbon nanotubes bundles on silicon wafer promise more opportunity for each photon of sunlight to interact with resulting solar cell, as a result of increase of surface area available to produce electricity. The paper discusses morphology of grown nanotubes on silicon wafer along with future prospects of Si-CNTs fabricated solar cells.

Creation of three-dimensional structures by direct ink writing with kaolin suspensions

2018 ◽  
Vol 6 (42) ◽  
pp. 11392-11400 ◽  
Author(s):  
Qinglei Sun ◽  
Zizhou Yang ◽  
Hao Cheng ◽  
Yang Peng ◽  
Yanqin Huang ◽  
...  
Keyword(s):  
Science And Technology ◽  
Three Dimensional ◽  
Direct Ink Writing ◽  
Layer Structures

Three-layer structures of the dried letters into the Huazhong University of Science and Technology “H, U, S and T” shapes.

Structure of the Calcium Pump from Sarcoplasmic Reticulum at 8 Å Resolution: Architecture of the Transmembrane Helices and Localization of the Binding Site for Thapsigargin

1998 ◽  
Vol 4 (S2) ◽  
pp. 462-463
Author(s):  
P. Zhang ◽  
C. Toyoshima ◽  
K. Yonekura ◽  
G. Inesi ◽  
M. Green ◽  
...  
Keyword(s):  
Sarcoplasmic Reticulum ◽  
Transmembrane Domain ◽  
Three Dimensional ◽  
Specific Inhibitor ◽  
Large Family ◽  
Calcium Pump ◽  
Dimensional Structure ◽  
Transmembrane Helices ◽  
Site Mutagenesis ◽  
P Type

The calcium pump (Ca2+-ATPase) from sarcoplasmic reticulum (SR) is a prominent member of the large family of ATP-dependent cation pumps, which include Na+ /K+-ATPase, H+/K+-ATPase from the stomach, H+-ATPase from yeast and Neurospora, and various detoxifying pumps for Cd+, Cu+ and other metals. In muscle, calcium is stored inside the SR and contraction is initiated by regulated release through specific calcium channels; Ca2+ -ATPase is responsible for relaxation by pumping calcium back into the SR lumen. Many techniques (chemical modification, site mutagenesis, reaction kinetics) have been used to correlate Ca2+-ATPase sequence with function, but no high resolution three-dimensional structure of Ca2+-ATPase, or any P-type pump, has yet been determined. In the current work, we have determined the structure from helical crystals at 8 A resolution and thus revealed the alpha-helical architecture of the transmembrane domain. In addition, a specific inhibitor of Ca2+-ATPase, thapsigargin, was used to promote crystallization and we have characterized the structural consequences of its inhibition.

Investigation of p-type macroporous silicon formation

2005 ◽  
Vol 202 (8) ◽  
pp. 1390-1395 ◽  
Author(s):  
C. Lévy-Clément ◽  
S. Lust ◽  
M. Mamor ◽  
J. Rappich ◽  
Th. Dittrich
Keyword(s):  
Macroporous Silicon ◽  
P Type

Supercapacitive behavior depending on the mesopore size of three-dimensional micro-, meso- and macroporous silicon carbide for supercapacitors

2015 ◽  
Vol 17 (6) ◽  
pp. 4424-4433 ◽  
Author(s):  
Myeongjin Kim ◽  
Ilgeun Oh ◽  
Jooheon Kim
Keyword(s):  
Silicon Carbide ◽  
Porous Structure ◽  
Synthesis Method ◽  
Three Dimensional ◽  
Macroporous Silicon ◽  
Facile Synthesis ◽  
Capacitive Performance ◽  
Structure And Morphology

A facile synthesis method is developed to prepare the three-dimensional micro-, meso- and macroporous silicon carbide spheres that exhibit a unique porous structure and morphology, resulting in high super-capacitive performance.

Partially Oxidized Macroporous Silicon: A Three-Dimensional Photonic Matrix for Microarray Applications

2006 ◽  
Vol 18 (23) ◽  
pp. 3135-3139 ◽  
Author(s):  
M. H. Klühr ◽  
A. Sauermann ◽  
C. A. Elsner ◽  
K. H. Thein ◽  
S. K. Dertinger
Keyword(s):  
Three Dimensional ◽  
Macroporous Silicon

Vertical Bipolar Transistors and a Merged 3–D Vertical Bipolar—Mos Device in Recrystallized Polysilicon

1985 ◽  
Vol 53 ◽  
Author(s):  
J.C. Sturm ◽  
J.F. Gibbons
Keyword(s):  
Minority Carrier ◽  
Strong Dependence ◽  
Three Dimensional ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Current Gain ◽  
Collector Current ◽  
Beam Laser ◽  
P Type ◽  
Mos Device

ABSTRACTThe minority carrier properties of shaped—beam laser-recrystallized polysilicon films have been studied, leading to the successful fabrication of vertical bipolar transistors in these films and to the demonstration of a novel three—dimensional mergedvertical bipolar—MOS device. Experiments with lateral transistors established a minority carrier diffusion length of 4 μm in p—type recrystallized films. Vertical bipolar npn transistors with a base—width of 0.2 μm were fabricated in 0.75–μm—thick films using a polysilicon emitter technology. The strong dependence of the gain of the transistors on hydrogen annealing steps is described. With an Ar:H plasma anneal to decrease base—emitter space—charge region recombination, a common—emitter current gain of 100 was possible. The bipolar transistor technology was then used to develop a 3—D fourterminal merged verticalbipolar—MOS device in a recrystallized film. It consists of the three terminals of a bipolar transistor plus a fourth underlying terminal which serves to switch the collector current on or off. A simple model for the device is presented.

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