Mass Production Test of Solar Cells and Modules Made of 100% UMG Silicon. 20.76% Record Efficiency

For more than 15 years FerroAtlantica (now Ferroglobe) has been developing a method of silicon purification to obtain Upgraded Metallurgical Grade Silicon (UMG-Si) for PV solar application without blending. After many improvements and optimizations, the final process has clearly demonstrated its validity in terms of quality and costs. In this paper the authors present new results stemming from a first mass-production campaign and a detailed description of the purification process that results in the tested UMG-Si. The subsequent steps in the value chain for the wafer, cell and module manufacturing are also described. Two independent companies, among the Tier-1 solar cells producers, were selected for the industrial test, each using a different solar cell technology: Al-BSF and black silicon + PERC. Cells and modules were manufactured in conventional production lines and their performances compared to those obtained with standard polysilicon wafers produced in the same lines and periods. Thus, for Al-BSF technology, the average efficiency of solar cells obtained with UMG-Si was (18.4 ± 0.4)% compared to 18.49% obtained with polysilicon-made wafers. In the case of black silicon + PERC, the average efficiency obtained with UMG-Si was (20.1 ± 0.6)%, compared to 20.41% for polysilicon multicrystalline wafers.

Defect characterization of UMG mc-Si solar cells using LBIC and luminescence imaging techniques

ABSTRACTUpgraded metallurgical-grade silicon (UMG Si) solar cells with different ranges of efficiencies were characterized through electroluminescence imaging (ELi) and light-beam induced current (LBIC) measurements. The results showed a good correlation between the EL intensity and the efficiency of the solar cells. ELi images gave a bright contrast at the defects, grain boundaries and intragrain defects, and dark contrast inside the grain bodies. Metallic impurities are much more present in some cells due to the directional solidification of the Si ingot. Local short-circuit current mapping with LBIC measurements revealed a bright zone in the neighborhoods of the defects due to the depletion of impurities. Internal quantum efficiencies (IQE) and effective diffusion lengths (Leff) were calculated using different excitation wavelengths. High resolution LBIC measurements revealed micrometric clusters of impurities around intragrain defects.