scholarly journals Effect of Dimethylformamide, Current Density and Resistivity on Pore Geometry in P-type Macroporous Silicon

2014 ◽  
Vol 5 ◽  
pp. 764-771 ◽  
Author(s):  
S. Haldar ◽  
A. De ◽  
S. Chakraborty ◽  
S. Ghosh ◽  
U. Ghanta
Keyword(s):  
Current Density ◽  
Pore Geometry ◽  
Macroporous Silicon ◽  
P Type

Structural, Surface Morphological and Photoluminescence Properties of Nanostructured Porous Silicon Material for Optoelectronics Application

2012 ◽  
Vol 584 ◽  
pp. 290-294 ◽  
Author(s):  
Jeyaprakash Pandiarajan ◽  
Natarajan Jeyakumaran ◽  
Natarajan Prithivikumaran
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Light Emission ◽  
Electrochemical Etching ◽  
Light Emitting Diode ◽  
Radiative Transition ◽  
Sem Images ◽  
Optoelectronic Application ◽  
Gap Opening ◽  
P Type

The promotion of silicon (Si) from being the key material for microelectronics to an interesting material for optoelectronic application is a consequence of the possibility to reduce its device dimensionally by a cheap and easy technique. In fact, electrochemical etching of Si under controlled conditions leads to the formation of nanocrystalline porous silicon (PS) where quantum confinement of photo excited carriers and surface species yield to a band gap opening and an increased radiative transition rate resulting in efficient light emission. In the present study, the nanostructured PS samples were prepared using anodic etching of p-type silicon. The effect of current density on structural and optical properties of PS, has been investigated. XRD studies confirm the presence of silicon nanocrystallites in the PS structure. By increasing the current density, the average estimated values of grain size are found to be decreased. SEM images indicate that the pores are surrounded by a thick columnar network of silicon walls. The observed PL spectra at room temperature for all the current densities confirm the formation of PS structures with nanocrystalline features. PL studies reveal that there is a prominent visible emission peak at 606 nm. The obtained variation of intensity in PL emission may be used for intensity varied light emitting diode applications. These studies confirm that the PS is a versatile material with potential for optoelectronics application.

Effects of current density and time on the characteristics of P-type silicon nano array

2018 ◽  
Vol 676 (1) ◽  
pp. 123-130
Author(s):  
Han Hee Ryu ◽  
Jae Keon Kim ◽  
Jun Yeop Lee ◽  
Seong Ho Kong ◽  
Daewoong Jung
Keyword(s):  
Current Density ◽  
Type Silicon ◽  
P Type

Investigation of p-type macroporous silicon formation

2005 ◽  
Vol 202 (8) ◽  
pp. 1390-1395 ◽  
Author(s):  
C. Lévy-Clément ◽  
S. Lust ◽  
M. Mamor ◽  
J. Rappich ◽  
Th. Dittrich
Keyword(s):  
Macroporous Silicon ◽  
P Type

Doping effects in p- and n-type layers of 390-nm InGaN DQW lasers

2015 ◽  
Vol 29 (18) ◽  
pp. 1550118
Author(s):  
Gh. Alahyarizadeh ◽  
M. Amirhoseiny ◽  
Z. Hassan
Keyword(s):  
Active Region ◽  
Current Density ◽  
Slope Efficiency ◽  
Radiative Recombination ◽  
Doping Concentration ◽  
Threshold Current ◽  
Optical Intensity ◽  
Current Densities ◽  
P Type ◽  
Hole Current

The performance characteristics of deep violet InGaN laser diodes (LDs) are theoretically studied with the effects of doping concentrations in p- and n-type layers. Comprehensive study on output performance characteristics such as output power, threshold current, slope efficiency, DQE, and optical intensity, as well as on several internal parameters such as quantum well (QW) carrier densities, electron and hole current densities of deep violet InGaN double quantum well (DQW) lasers, have been done. The simulation results indicate that output power of LD is increased by increasing doping concentration in both n- and p-type layers. it can be due to increased carrier current densities and consequently increased radiative recombination. The results also indicate decrease in slope efficiency and DQE with increasing doping concentration. This situation can be caused by increasing nonradiative recombinations, such as Auger recombination inside and outside the active region, current overflow from the active region, and optical losses. Increasing current overflow from the active region also causes an increase in threshold current. Using higher doping concentration in n-type layers results in increase in electron current density in the n-side and consequently, higher electron flow in the active region. It causes an increase in higher radiative recombination and a higher need for holes and consequently, a higher hole current density in p-type layers. As well as, optical intensity of LDs is increased by increasing the doping concentration.

A Systematic Study of the Structural and Luminescence Properties of P-Type Porous Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
H. Yoon ◽  
M. S. Goorsky
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Storage Time ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Luminescence Properties ◽  
Strained Layers ◽  
X Ray ◽  
P Type ◽  
The Relationship

AbstractThe structural and luminescence properties of (001) p-type porous silicon samples (p∼0.1-0.2 Ω•cm) fabricated electrochemically under various conditions were investigated using high resolution double and triple axis diffraction and photoluminescence spectroscopy. We show the sensitivity of the structure of the porous silicon to the current density in the range of 10-50 mA/cm2, HF acid concentration in the range of 15% - 30%, and the evolution of the structure with time. We have found a systematic dependence of the amount of strain in the porous silicon layer (PSL) on the current density. The effect of the HF concentration is such that at 25% and 30% HF, PSLs are formed which are crystalline and strained, but at a lower HF concentration (15%), strained layers are not formed. The perpendicular strain in the layer increases linearly with storage time but the in-plane lattice constant of the porous silicon remains matched to the substrate. Further, we utilized x-ray reciprocal space maps to observe that, with storage time, there is an increase in the diffuse scattering from the PSL due to an increase in the range of tilts in the layer. Room temperature photoluminescence emission was observed for all 15% and 25% HF samples, but not for all 30% HF samples. Higher peak luminescence energy was obtained with lower HF concentration. Finally, we note the relationship between the strain in the PSL and the luminescence properties.

Temperature Dependent Current-Voltage Characteristics of n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions

2015 ◽  
Vol 1120-1121 ◽  
pp. 435-439
Author(s):  
Nathaporn Promros ◽  
Dalin Prajakkan ◽  
Nantharat Hongsa ◽  
Nattanee Suthayanan ◽  
Phongsaphak Sittimart ◽  
...  
Keyword(s):  
Current Density ◽  
Ideality Factor ◽  
Series Resistance ◽  
Linear Part ◽  
Thermionic Emission ◽  
Saturation Current ◽  
Current Voltage ◽  
Saturation Current Density ◽  
Current Voltage Characteristics ◽  
P Type

In this work, n-type β-FeSi2/intrinsic Si/p-type Si heterojunctions were prepared by facing-targets direct-current sputtering. We measured their current-voltage characteristics at low temperatures ranging from 300 K down to 50 K and investigated their ideality factor, saturation current and series resistance using thermionic emission theory and Cheung’s method. From thermionic emission theory, the ideality factor and saturation current density were calculated from the slope of the linear part from the forward lnJ-V and the straight line intercept of lnJ-V at zero voltage, respectively. When the temperature decreased from 300 K down to 50 K, the ideality factor increased from 1.12 to 11.13, whereas the saturation current density decreased from 2.09 × 10-6 A/cm2 to 1.06 × 10-9 A/cm2. Using Cheung’s method, we plotted the relations of dV/d(lnJ)-J and H(J)-J in order to estimate the series resistance from the slope of both plots. In addition, we estimated the ideality factor from a y-axis intercept of the dV/d(lnJ)-J plot. The series resistances from both plots were consistent with each other and increased with the decreasing temperature. The ideality factor estimated by Cheung’s method was in agreement with that obtained from estimation by thermionic emission theory.

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