scholarly journals Numerical simulations of rear point-contacted solar cells on 2.2 Ωcm p-type c-Si substrates

2013 ◽  
Vol 23 (1) ◽  
pp. 69-77 ◽  
Author(s):  
Juan M. López-González ◽  
Isidro Martín ◽  
Pablo Ortega ◽  
Albert Orpella ◽  
Ramon Alcubilla
Keyword(s):  
Solar Cells ◽  
Numerical Simulations ◽  
Si Substrates ◽  
Type C ◽  
P Type

Numerical simulations of hole carrier selective contacts in p-type c-Si solar cells

2019 ◽  
Vol 200 ◽  
pp. 109937 ◽  
Author(s):  
Paul Procel ◽  
Philipp Löper ◽  
Felice Crupi ◽  
Christophe Ballif ◽  
Andrea Ingenito
Keyword(s):  
Solar Cells ◽  
Numerical Simulations ◽  
Si Solar Cells ◽  
Type C ◽  
P Type

scholarly journals High-efficiency black silicon interdigitated back contacted solar cells on p-type and n-type c-Si substrates

2015 ◽  
Vol 23 (11) ◽  
pp. 1448-1457 ◽  
Author(s):  
Pablo Ortega ◽  
Eric Calle ◽  
Guillaume von Gastrow ◽  
Päivikki Repo ◽  
David Carrió ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Black Silicon ◽  
Si Substrates ◽  
Type C ◽  
P Type

N-type and P-type C-SI surface passivation by remote PECVD AlOx for solar cells

2010 ◽  
Author(s):  
Quanyuan Shang ◽  
Walter Seaman ◽  
Mike Whitney ◽  
Mark George ◽  
John Madocks ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Type C ◽  
P Type

Optical Properties of Free-Standing Ultrahigh Porosity Silicon Films Prepared by Supercritical Drying

1996 ◽  
Vol 452 ◽  
Author(s):  
J. Von Behren ◽  
P. M. Fauchet ◽  
E. H. Chimowitz ◽  
C. T. Lira
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Supercritical Drying ◽  
Silicon Films ◽  
Index Of Refraction ◽  
Free Standing ◽  
Crystal Silicon ◽  
Si Substrates ◽  
Type C ◽  
P Type

AbstractHighly luminescent free-standing porous silicon thin films of excellent optical quality have been manufactured by using electrochemical etching and lift-off steps combined with supercritical drying. One to 50 μm thick free-standing layers made from highly (p+) and moderately (p) Boron doped single crystal silicon (c-Si) substrates have been produced with porosities (P) up to 95 %. The Fabry-Pérot fringes observed in the transmission and photoluminescence (PL) spectra are used to determine the refractive index. At the highest P the index of refraction is below 1.2 from the IR to 2 eV. The absorption coefficients follow a nearly exponential behavior in the energy range from 1.2 eV and 4 eV. The porosity corrected absorption spectra of free-standing films made from p type c-Si substrates are blue shifted with respect to those prepared from p+ substrates. For P > 70 % a blue shift is also observed in PL. At equal porosities the luminescence intensities of porous silicon films made from p+ and p type c-Si are different by one order of magnitude.

Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

2006 ◽  
Vol 352 (9-20) ◽  
pp. 1972-1975 ◽  
Author(s):  
Ying Xu ◽  
Zhihua Hu ◽  
Hongwei Diao ◽  
Yi Cai ◽  
Shibin Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Nanocrystalline Silicon ◽  
Heterojunction Solar Cells ◽  
Type C ◽  
P Type

scholarly journals Material Requirements for Buffer Layers Used to Obtain Solar Cells with High Open Circuit Voltages

1999 ◽  
Vol 557 ◽  
Author(s):  
Bolko Von Roedern ◽  
Gottfried H. Bauer
Keyword(s):  
Solar Cells ◽  
Transparent Conductive Oxide ◽  
Contact Layer ◽  
Open Circuit ◽  
Buffer Layers ◽  
Hit Cells ◽  
Type C ◽  
P Type ◽  
Open Circuit Voltages ◽  
Material Requirements

AbstractThis paper discusses material requirements for junction layers needed to obtain solar cells with highest possible open-circuit voltages (VOC). In a typical a-Si:H-based “p/i/n” solar cell, this includes the transparent conductive oxide (TCO) contact layer, the p-layer, a “buffer layer” inserted at the p/i interface, and the surface portion of the intrinsic layer. In HIT-cells, the i-layer between (n-type) c-Si and (p-type) a-Si:H may be regarded as the buffer. Our suggestion to obtain high values of VOC relies on using materials with high lifetimes and low carrier mobilities that are capable of reducing surface or junction recombination by reducing the flow of carriers into this loss-pathway. We provide a general calculation that supports these approaches and can explain why these schemes are beneficial for all solar cells.

Analysis of p-type SiOxlayers as a boron diffusion source for n-type c-Si substrates

2016 ◽  
Vol 213 (7) ◽  
pp. 1760-1766 ◽  
Author(s):  
Prabal Goyal ◽  
Elias Urrejola ◽  
Junegie Hong ◽  
Julien Voillot ◽  
Pere Roca i Cabarrocas ◽  
...  
Keyword(s):  
Boron Diffusion ◽  
Si Substrates ◽  
Type C ◽  
Diffusion Source ◽  
P Type

scholarly journals Emitter formation using laser doping technique on n- and p-type c-Si substrates

2015 ◽  
Vol 336 ◽  
pp. 182-187 ◽  
Author(s):  
G. López ◽  
P. Ortega ◽  
M. Colina ◽  
C. Voz ◽  
I. Martín ◽  
...  
Keyword(s):  
Laser Doping ◽  
Si Substrates ◽  
Type C ◽  
Doping Technique ◽  
P Type

Implementation and understanding of p+ fired rear hole selective tunnel oxide passivating contacts enabling >22% conversion efficiency in p-type c-Si solar cells

2021 ◽  
Vol 219 ◽  
pp. 110809
Author(s):  
Andrea Ingenito ◽  
Sofia Libraro ◽  
Philippe Wyss ◽  
Christophe Allebé ◽  
Matthieu Despeisse ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conversion Efficiency ◽  
Si Solar Cells ◽  
Type C ◽  
P Type
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