hit cells
Recently Published Documents


TOTAL DOCUMENTS

85
(FIVE YEARS 0)

H-INDEX

21
(FIVE YEARS 0)

2020 ◽  
Vol 77 (11) ◽  
pp. 971-974
Author(s):  
Hongsub Jee ◽  
Jaehyeong Lee ◽  
Daehan Moon ◽  
Min-Joon Park ◽  
Taewung Jeong ◽  
...  
Keyword(s):  

2019 ◽  
Vol 139 (12) ◽  
pp. 2458-2466.e9 ◽  
Author(s):  
Akiharu Kubo ◽  
Takashi Sasaki ◽  
Hisato Suzuki ◽  
Aiko Shiohama ◽  
Satomi Aoki ◽  
...  

2015 ◽  
Vol 5 (3) ◽  
pp. 725-735 ◽  
Author(s):  
Raghu Vamsi Krishna Chavali ◽  
Sanchit Khatavkar ◽  
C. V. Kannan ◽  
Vijay Kumar ◽  
Pradeep R. Nair ◽  
...  

2009 ◽  
Vol 1153 ◽  
Author(s):  
Ana Kanevce ◽  
Wyatt K. Metzger

AbstractHeterojunction with intrinsic thin layer (HIT) solar cells have achieved conversion efficiencies higher than 22%. Yet, many questions concerning the device physics governing these cells remain unanswered. We use numerical modeling to analyze the role of a-Si:H layers and tunneling on cell performance. For cells with n-type c-Si (n-HIT cells), incorporating the indium-tin-oxide (ITO) as an n-type semiconductor creates an n+/p/n structure. Most device simulations do not work with this structure. Our modeling indicates that the n+/p/n device often produces irregular S-shaped current density–voltage (J-V) curves, which have been observed experimentally but were not previously understood. However, if tunneling is included, there are specific conditions where the n+/p/n structure performs as a robust solar cell with efficiencies exceeding 20%. Additional analysis examines voltage-dependent carrier collection in n-HIT cells, as well as material and interface properties that limit fill factor. In p-HIT cells, modeling the ITO layer as a semiconductor, rather than as a metallic contact, significantly reduces the impact of a-Si:H layer parameters on device performance. In p-HIT cells, the a-Si:H layers adjacent to the ITO layer play the role of a buffer that reduces interface recombination at the a-Si:H/c-Si interface and prevents tunneling of electrons from the ITO layer to the c-Si absorber. Tunneling through the a-Si:H layers adjacent to the back contact is important to attain regular J-V curves.


Author(s):  
M. Taguchi ◽  
H. Sakata ◽  
Y. Yoshimine ◽  
E. Maruyama ◽  
A. Terakawa ◽  
...  
Keyword(s):  

2005 ◽  
Vol 13 (6) ◽  
pp. 481-488 ◽  
Author(s):  
Mikio Taguchi ◽  
Akira Terakawa ◽  
Eiji Maruyama ◽  
Makoto Tanaka
Keyword(s):  

2002 ◽  
Vol 445 (3) ◽  
pp. 342-351 ◽  
Author(s):  
Sadao Sasaki ◽  
Ikuko Nakagaki ◽  
Hisao Kondo ◽  
Seiki Hori
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document