scholarly journals Emitter formation using laser doping technique on n- and p-type c-Si substrates

2015 ◽  
Vol 336 ◽  
pp. 182-187 ◽  
Author(s):  
G. López ◽  
P. Ortega ◽  
M. Colina ◽  
C. Voz ◽  
I. Martín ◽  
...  
Keyword(s):  
Laser Doping ◽  
Si Substrates ◽  
Type C ◽  
Doping Technique ◽  
P Type

Optical Properties of Free-Standing Ultrahigh Porosity Silicon Films Prepared by Supercritical Drying

1996 ◽  
Vol 452 ◽  
Author(s):  
J. Von Behren ◽  
P. M. Fauchet ◽  
E. H. Chimowitz ◽  
C. T. Lira
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Supercritical Drying ◽  
Silicon Films ◽  
Index Of Refraction ◽  
Free Standing ◽  
Crystal Silicon ◽  
Si Substrates ◽  
Type C ◽  
P Type

AbstractHighly luminescent free-standing porous silicon thin films of excellent optical quality have been manufactured by using electrochemical etching and lift-off steps combined with supercritical drying. One to 50 μm thick free-standing layers made from highly (p+) and moderately (p) Boron doped single crystal silicon (c-Si) substrates have been produced with porosities (P) up to 95 %. The Fabry-Pérot fringes observed in the transmission and photoluminescence (PL) spectra are used to determine the refractive index. At the highest P the index of refraction is below 1.2 from the IR to 2 eV. The absorption coefficients follow a nearly exponential behavior in the energy range from 1.2 eV and 4 eV. The porosity corrected absorption spectra of free-standing films made from p type c-Si substrates are blue shifted with respect to those prepared from p+ substrates. For P > 70 % a blue shift is also observed in PL. At equal porosities the luminescence intensities of porous silicon films made from p+ and p type c-Si are different by one order of magnitude.

Analysis of p-type SiOxlayers as a boron diffusion source for n-type c-Si substrates

2016 ◽  
Vol 213 (7) ◽  
pp. 1760-1766 ◽  
Author(s):  
Prabal Goyal ◽  
Elias Urrejola ◽  
Junegie Hong ◽  
Julien Voillot ◽  
Pere Roca i Cabarrocas ◽  
...  
Keyword(s):  
Boron Diffusion ◽  
Si Substrates ◽  
Type C ◽  
Diffusion Source ◽  
P Type

Ohmic Contact of p-Type ZnSe Using Heavily Alkaline Doped p+-ZnSe by Excimer Laser Doping Technique

1997 ◽  
Author(s):  
Toru Aoki ◽  
Akira Ishibashi ◽  
Masaharu Nagai ◽  
Yoshinori Hatanaka
Keyword(s):  
Excimer Laser ◽  
Ohmic Contact ◽  
Laser Doping ◽  
Doping Technique ◽  
P Type

scholarly journals Nanostructured Cu2ZnSnS4 Thin Films on Porous-Si Wafer

2019 ◽  
Vol 8 (1) ◽  
pp. 28-33
Author(s):  
M. A. Jafarov ◽  
E. F. Nasirov ◽  
S. A. Jahangirova ◽  
R. Mammadov
Keyword(s):  
Solar Cell ◽  
Forward Bias ◽  
Etching Time ◽  
Reverse Bias Voltage ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Variation ◽  
Photo Response ◽  
Type C ◽  
P Type

 Nanostructure CZTS thin film was fabricated by electrodeposition technique. To manufacture the heterojunctions, p-type c-Si wafers of (100) orientation were used as a substrate.  Before anodization, the surface of the c-Si substrates were etched in an aqueous solution of HF and further washed in distilled water (at temperature of 80°С and ethyl alcohol and then dried in air. The current-voltage characteristics of the CZTS /PS solar cell under dark conditions show that forward bias current variation approximately exponentially with voltage bias. The capacitance for Nano- CZTS /PS Solar Cell decreases with the increase of the reverse bias voltage and with the increasing of etching time of nPS layers. That heterojunctions demonstrate good photo-response in the wavelength range of 510 - 650 nm.

Work Function Difference Between N-Type μc-Si Gate Electrodes Deposited by Remote Pecvd and P-Type c-Si Substrates in Mos Capacitors

1992 ◽  
Vol 258 ◽  
Author(s):  
D.R. Lee ◽  
G. Lucovsky
Keyword(s):  
Work Function ◽  
Mos Capacitors ◽  
Si Substrates ◽  
Gate Electrodes ◽  
Type C ◽  
Work Function Difference ◽  
Si Films ◽  
P Type ◽  
Mos Device ◽  
Function Difference

ABSTRACTWe have used remote PECVD to deposit highly-doped μc-Si films for use as gate electrodes in MOS capacitors. The flatband voltages of capacitors with different oxide thicknesses have been measured by high-frequency capacitance-voltage and have been used to determine the work function difference between an n-type μc-Si electrode and a p-type c-Si substrate. This value for ϕμs is discussed in terms of a band diagram for the stacked-gate MOS device, and is compared to the expected value.

scholarly journals Numerical simulations of rear point-contacted solar cells on 2.2 Ωcm p-type c-Si substrates

2013 ◽  
Vol 23 (1) ◽  
pp. 69-77 ◽  
Author(s):  
Juan M. López-González ◽  
Isidro Martín ◽  
Pablo Ortega ◽  
Albert Orpella ◽  
Ramon Alcubilla
Keyword(s):  
Solar Cells ◽  
Numerical Simulations ◽  
Si Substrates ◽  
Type C ◽  
P Type

scholarly journals High-efficiency black silicon interdigitated back contacted solar cells on p-type and n-type c-Si substrates

2015 ◽  
Vol 23 (11) ◽  
pp. 1448-1457 ◽  
Author(s):  
Pablo Ortega ◽  
Eric Calle ◽  
Guillaume von Gastrow ◽  
Päivikki Repo ◽  
David Carrió ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Black Silicon ◽  
Si Substrates ◽  
Type C ◽  
P Type

scholarly journals Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells

2015 ◽  
Vol 77 ◽  
pp. 752-758 ◽  
Author(s):  
Gema López ◽  
Pablo R. Ortega ◽  
Isidro Martín ◽  
Cristóbal Voz ◽  
Anna B. Morales ◽  
...  
Keyword(s):  
Solar Cells ◽  
Laser Doping ◽  
Si Solar Cells ◽  
Doping Technique ◽  
P Type ◽  
Selective Emitters

Infrared Oscillators in Conventional Carbon Nanotube FET Technology

2015 ◽  
Vol 24 (04) ◽  
pp. 1550053
Author(s):  
Lobna I'msaddak ◽  
Dalenda Ben Issa ◽  
Abdennaceur Kachouri ◽  
Mounir Samet ◽  
Hekmet Samet
Keyword(s):  
Power Consumption ◽  
Response Time ◽  
Oscillation Frequency ◽  
Ring Oscillator ◽  
Propagation Time ◽  
Type C ◽  
P Type ◽  
Lc Tank ◽  
The Impact ◽  
Carbon Nanotube Fet

This paper presents the design of C-CNTFET oscillator's arrays for infrared 'IR' technology. These arrays are contained by both of the LC-tank and the voltage control 'coupled N- and P-type C-CNTFET LC-tank' oscillators. In this paper, the analysis of the impact of CNT diameter variations and the nonlinear capacitances (C GD and C GS ) were introduced, especially on propagation time, oscillation frequency and power consumption. The C-CNTFET inverter, ring oscillator, LC-tank and coupled N- and P-type C-CNTFET LC-tank oscillator structures were designed and their speeding and performances have been investigated with the proposed n-type of C-CNTFET model supplied by a 0.5 V power voltage. Simulation results show that the n- and p-types LC-tank oscillator circuit designs achieved an approximately equal oscillation frequency, response time and power consumption. Whereas the coupled N- and P-type C-CNTFET LC-tank oscillator has the lowest power consumption equal to 0.13 μW, the highest oscillation frequency (10.08 THz) and the fastest response time (1.81 ps).

Features of characteristics and stability of CdTe nuclear radiation detectors fabricated by laser doping technique

2008 ◽  
Author(s):  
Volodymyr A. Gnatyuk ◽  
Toru Aoki ◽  
Oleksandr I. Vlasenko ◽  
Sergiy N. Levytskyi ◽  
Yoshinori Hatanaka ◽  
...  
Keyword(s):  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Laser Doping ◽  
Doping Technique ◽  
Nuclear Radiation Detectors
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