Analysis of p-type SiOxlayers as a boron diffusion source for n-type c-Si substrates

2016 ◽  
Vol 213 (7) ◽  
pp. 1760-1766 ◽  
Author(s):  
Prabal Goyal ◽  
Elias Urrejola ◽  
Junegie Hong ◽  
Julien Voillot ◽  
Pere Roca i Cabarrocas ◽  
...  
Keyword(s):  
Boron Diffusion ◽  
Si Substrates ◽  
Type C ◽  
Diffusion Source ◽  
P Type

Optical Properties of Free-Standing Ultrahigh Porosity Silicon Films Prepared by Supercritical Drying

1996 ◽  
Vol 452 ◽  
Author(s):  
J. Von Behren ◽  
P. M. Fauchet ◽  
E. H. Chimowitz ◽  
C. T. Lira
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Supercritical Drying ◽  
Silicon Films ◽  
Index Of Refraction ◽  
Free Standing ◽  
Crystal Silicon ◽  
Si Substrates ◽  
Type C ◽  
P Type

AbstractHighly luminescent free-standing porous silicon thin films of excellent optical quality have been manufactured by using electrochemical etching and lift-off steps combined with supercritical drying. One to 50 μm thick free-standing layers made from highly (p+) and moderately (p) Boron doped single crystal silicon (c-Si) substrates have been produced with porosities (P) up to 95 %. The Fabry-Pérot fringes observed in the transmission and photoluminescence (PL) spectra are used to determine the refractive index. At the highest P the index of refraction is below 1.2 from the IR to 2 eV. The absorption coefficients follow a nearly exponential behavior in the energy range from 1.2 eV and 4 eV. The porosity corrected absorption spectra of free-standing films made from p type c-Si substrates are blue shifted with respect to those prepared from p+ substrates. For P > 70 % a blue shift is also observed in PL. At equal porosities the luminescence intensities of porous silicon films made from p+ and p type c-Si are different by one order of magnitude.

scholarly journals Emitter formation using laser doping technique on n- and p-type c-Si substrates

2015 ◽  
Vol 336 ◽  
pp. 182-187 ◽  
Author(s):  
G. López ◽  
P. Ortega ◽  
M. Colina ◽  
C. Voz ◽  
I. Martín ◽  
...  
Keyword(s):  
Laser Doping ◽  
Si Substrates ◽  
Type C ◽  
Doping Technique ◽  
P Type

scholarly journals Nanostructured Cu2ZnSnS4 Thin Films on Porous-Si Wafer

2019 ◽  
Vol 8 (1) ◽  
pp. 28-33
Author(s):  
M. A. Jafarov ◽  
E. F. Nasirov ◽  
S. A. Jahangirova ◽  
R. Mammadov
Keyword(s):  
Solar Cell ◽  
Forward Bias ◽  
Etching Time ◽  
Reverse Bias Voltage ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Variation ◽  
Photo Response ◽  
Type C ◽  
P Type

 Nanostructure CZTS thin film was fabricated by electrodeposition technique. To manufacture the heterojunctions, p-type c-Si wafers of (100) orientation were used as a substrate.  Before anodization, the surface of the c-Si substrates were etched in an aqueous solution of HF and further washed in distilled water (at temperature of 80°С and ethyl alcohol and then dried in air. The current-voltage characteristics of the CZTS /PS solar cell under dark conditions show that forward bias current variation approximately exponentially with voltage bias. The capacitance for Nano- CZTS /PS Solar Cell decreases with the increase of the reverse bias voltage and with the increasing of etching time of nPS layers. That heterojunctions demonstrate good photo-response in the wavelength range of 510 - 650 nm.

Work Function Difference Between N-Type μc-Si Gate Electrodes Deposited by Remote Pecvd and P-Type c-Si Substrates in Mos Capacitors

1992 ◽  
Vol 258 ◽  
Author(s):  
D.R. Lee ◽  
G. Lucovsky
Keyword(s):  
Work Function ◽  
Mos Capacitors ◽  
Si Substrates ◽  
Gate Electrodes ◽  
Type C ◽  
Work Function Difference ◽  
Si Films ◽  
P Type ◽  
Mos Device ◽  
Function Difference

ABSTRACTWe have used remote PECVD to deposit highly-doped μc-Si films for use as gate electrodes in MOS capacitors. The flatband voltages of capacitors with different oxide thicknesses have been measured by high-frequency capacitance-voltage and have been used to determine the work function difference between an n-type μc-Si electrode and a p-type c-Si substrate. This value for ϕμs is discussed in terms of a band diagram for the stacked-gate MOS device, and is compared to the expected value.

Aluminum and boron diffusion in 4H-SiC

2002 ◽  
Vol 742 ◽  
Author(s):  
M. K. Linnarsson ◽  
M. S. Janson ◽  
A. Schöner ◽  
B. G. Svensson
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Strong Dependence ◽  
Solubility Limit ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Al Content ◽  
Diffusion Source ◽  
P Type ◽  
Secondary Ion

ABSTRACTA brief survey is given of some recent result of boron diffusion in low doped n-type (intrinsic) and p-type 4H-SiC. Aluminum diffusion and solubility limit in 4H-SiC are also discussed. Ion implantation of boron has been performed in epitaxial material to form a diffusion source but also epitaxial 4H-SiC structures, with heavily boron or aluminum doped layers prepared by vapor phase epitaxy have been studied. Heat treatments have been made at temperatures ranging from 1100 to 2050°C for 5 minutes up to 64 h. Secondary ion mass spectrometry has been utilized for analysis. For boron diffusion in acceptor doped 4H-SiC, 4×1019 Al atoms/cm3, an activation energy of 5.3 eV has been determined and a strong dependence on Al content for the diffusion coefficient is revealed. Transient enhanced diffusion of ion-implanted boron in intrinsic 4H-SiC samples is discussed. Solubility limits of ∼1×1020 Al/cm3 (1700°C) and <1×1020 B/cm3 (1900°C) have been deduced.

scholarly journals Numerical simulations of rear point-contacted solar cells on 2.2 Ωcm p-type c-Si substrates

2013 ◽  
Vol 23 (1) ◽  
pp. 69-77 ◽  
Author(s):  
Juan M. López-González ◽  
Isidro Martín ◽  
Pablo Ortega ◽  
Albert Orpella ◽  
Ramon Alcubilla
Keyword(s):  
Solar Cells ◽  
Numerical Simulations ◽  
Si Substrates ◽  
Type C ◽  
P Type

scholarly journals High-efficiency black silicon interdigitated back contacted solar cells on p-type and n-type c-Si substrates

2015 ◽  
Vol 23 (11) ◽  
pp. 1448-1457 ◽  
Author(s):  
Pablo Ortega ◽  
Eric Calle ◽  
Guillaume von Gastrow ◽  
Päivikki Repo ◽  
David Carrió ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Black Silicon ◽  
Si Substrates ◽  
Type C ◽  
P Type

Infrared Oscillators in Conventional Carbon Nanotube FET Technology

2015 ◽  
Vol 24 (04) ◽  
pp. 1550053
Author(s):  
Lobna I'msaddak ◽  
Dalenda Ben Issa ◽  
Abdennaceur Kachouri ◽  
Mounir Samet ◽  
Hekmet Samet
Keyword(s):  
Power Consumption ◽  
Response Time ◽  
Oscillation Frequency ◽  
Ring Oscillator ◽  
Propagation Time ◽  
Type C ◽  
P Type ◽  
Lc Tank ◽  
The Impact ◽  
Carbon Nanotube Fet

This paper presents the design of C-CNTFET oscillator's arrays for infrared 'IR' technology. These arrays are contained by both of the LC-tank and the voltage control 'coupled N- and P-type C-CNTFET LC-tank' oscillators. In this paper, the analysis of the impact of CNT diameter variations and the nonlinear capacitances (C GD and C GS ) were introduced, especially on propagation time, oscillation frequency and power consumption. The C-CNTFET inverter, ring oscillator, LC-tank and coupled N- and P-type C-CNTFET LC-tank oscillator structures were designed and their speeding and performances have been investigated with the proposed n-type of C-CNTFET model supplied by a 0.5 V power voltage. Simulation results show that the n- and p-types LC-tank oscillator circuit designs achieved an approximately equal oscillation frequency, response time and power consumption. Whereas the coupled N- and P-type C-CNTFET LC-tank oscillator has the lowest power consumption equal to 0.13 μW, the highest oscillation frequency (10.08 THz) and the fastest response time (1.81 ps).

scholarly journals Temperature-dependent characteristics for the p-type CuO gate HEMT and high-k HfO2 MIS-HEMT on the Si substrates

AIP Advances ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 105204
Author(s):  
Yaopeng Zhao ◽  
Chong Wang ◽  
Xuefeng Zheng ◽  
Yunlong He ◽  
Xiaohua Ma ◽  
...  
Keyword(s):  
Temperature Dependent ◽  
Si Substrates ◽  
High K ◽  
P Type
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