The attenuation and slow-wave characteristics of an inverted embedded (IEM) metal-insulator semiconductor (MIS) microstrip line

2004 ◽  
Vol 41 (5) ◽  
pp. 366-369 ◽  
Author(s):  
W. Y. Yin ◽  
X. T. Dong
Keyword(s):  
Slow Wave ◽  
Microstrip Line ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Wave Characteristics

TSV Modeling Considering Signal Integrity Issues

2010 ◽  
Vol 2010 (1) ◽  
pp. 000572-000576
Author(s):  
Ivan Ndip ◽  
Brian Curran ◽  
Kai Löbbicke ◽  
Stephan Guttowski ◽  
Herbert Reichl ◽  
...  
Keyword(s):  
Slow Wave ◽  
Skin Effect ◽  
Signal Integrity ◽  
Semiconductor Structure ◽  
Frequency Range ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Tem Mode ◽  
The Impact

Since a TSV has a metal-insulator-semiconductor structure, it supports three fundamental modes namely, skin-effect, slow-wave and dielectric quasi-TEM mode. In this contribution, we predict the frequency range of these modes, considering TSVs for interposer applications as an example. Furthermore, the impact of Si-resistivity on signal integrity is quantified and coaxial TSV configurations are proposed to minimize this impact.

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

Influence of ultrashort pulses of electromagnetic radiation on parameters of metal-insulator-semiconductor structures

2004 ◽  
Vol 38 (12) ◽  
pp. 1390-1393
Author(s):  
V. A. Terekhov ◽  
A. N. Man’ko ◽  
E. N. Bormontov ◽  
V. N. Levchenko ◽  
S. Yu. Trebunskikh ◽  
...  
Keyword(s):  
Electromagnetic Radiation ◽  
Ultrashort Pulses ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures
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