MOVPE growth of spontaneously ordered (GaIn) and (AlIn)P layers lattice matched to GaAs substrates

1997 ◽  
Vol 32 (1) ◽  
pp. 69-82 ◽  
Author(s):  
V. Gottschalch ◽  
R. Franzheld ◽  
I. Pietzonka ◽  
R. Schwabe ◽  
G. Benndorf ◽  
...  
Keyword(s):  
Gaas Substrates ◽  
Movpe Growth ◽  
Lattice Matched

Tem Observation of defects in InGaAsP and InGaP Crystals on GaAs Substrates Grown by Liquid Phase Epitaxy

1983 ◽  
Vol 31 ◽  
Author(s):  
O. Ueda ◽  
S. Isozumi ◽  
S. Komiya ◽  
T. Kusunoki ◽  
I. Umebu
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Gaas Substrate ◽  
Stacking Faults ◽  
Dislocation Loops ◽  
Gaas Substrates ◽  
Modulated Structures ◽  
Lattice Matched

ABSTRACTDefects in InGaAsP and InGaP crystals lattice-matched to (001)-oriented GaAs substrate successfully grown by liquid phase epitaxy, have been investigated by TEM and STEM/EDX. Typical defects observed by TEM are composition-modulated structures, dislocation loops, non-structural microdefects, and stacking faults.

Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates

2004 ◽  
Vol 132 (10) ◽  
pp. 707-711 ◽  
Author(s):  
L.F. Bian ◽  
D.S. Jiang ◽  
P.H. Tan ◽  
S.L. Lu ◽  
B.Q. Sun ◽  
...  
Keyword(s):  
Gaas Substrates ◽  
Lattice Matched

GaAs substrates for the MOVPE growth of (Hg,Cd)Te layers

1994 ◽  
Vol 3 (1-6) ◽  
pp. 239-245 ◽  
Author(s):  
R. Triboulet ◽  
A. Tromson-Carli ◽  
G. Patriarche ◽  
D. Lorans ◽  
T. Nguyen Duy
Keyword(s):  
Gaas Substrates ◽  
Movpe Growth

Status of IR detectors for high operating temperature produced by MOVPE growth of MCT on GaAs substrates

2012 ◽  
Author(s):  
P. Knowles ◽  
L. Hipwood ◽  
N. Shorrocks ◽  
I. M. Baker ◽  
L. Pillans ◽  
...  
Keyword(s):  
Operating Temperature ◽  
Ir Detectors ◽  
High Operating Temperature ◽  
Gaas Substrates ◽  
Movpe Growth

MOVPE Growth of lnSb on GaAs Substrates

2005 ◽  
Author(s):  
R.M. Graham ◽  
N.J. Mason ◽  
P.J. Walker ◽  
R.W. Gedridge
Keyword(s):  
Gaas Substrates ◽  
Movpe Growth

Growth of CuGaSe2Layers on Closely Lattice-Matched GaAs Substrates by Migration-Enhanced Epitaxy

2011 ◽  
Vol 50 (12R) ◽  
pp. 125502
Author(s):  
Miki Fujita ◽  
Atsushi Kawaharazuka ◽  
Jiro Nishinaga ◽  
Klaus H. Ploog ◽  
Yoshiji Horikoshi
Keyword(s):  
Gaas Substrates ◽  
Migration Enhanced Epitaxy ◽  
Lattice Matched

Strain-Induced Diffusion in Heteroepitaxially Grown CuInSe2 on GaAs Substrates

1995 ◽  
Vol 399 ◽  
Author(s):  
P. Fons ◽  
S. Niki ◽  
A. Yamada ◽  
A. Okada ◽  
D.J. Tweet
Keyword(s):  
Thin Film ◽  
Secondary Ion Mass Spectrometry ◽  
Second Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
State Of Stress ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTA series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (100) GaAs substrates

2010 ◽  
Vol 43 (1) ◽  
pp. 106-110 ◽  
Author(s):  
H. Ben Naceur ◽  
T. Mzoughi ◽  
I. Moussa ◽  
L. Nguyen ◽  
A. Rebey ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Surfactant Effect ◽  
Gaas Substrates ◽  
Movpe Growth
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