GaAs substrates for the MOVPE growth of (Hg,Cd)Te layers

1994 ◽  
Vol 3 (1-6) ◽  
pp. 239-245 ◽  
Author(s):  
R. Triboulet ◽  
A. Tromson-Carli ◽  
G. Patriarche ◽  
D. Lorans ◽  
T. Nguyen Duy
Keyword(s):  
Gaas Substrates ◽  
Movpe Growth

Status of IR detectors for high operating temperature produced by MOVPE growth of MCT on GaAs substrates

2012 ◽  
Author(s):  
P. Knowles ◽  
L. Hipwood ◽  
N. Shorrocks ◽  
I. M. Baker ◽  
L. Pillans ◽  
...  
Keyword(s):  
Operating Temperature ◽  
Ir Detectors ◽  
High Operating Temperature ◽  
Gaas Substrates ◽  
Movpe Growth

MOVPE Growth of lnSb on GaAs Substrates

2005 ◽  
Author(s):  
R.M. Graham ◽  
N.J. Mason ◽  
P.J. Walker ◽  
R.W. Gedridge
Keyword(s):  
Gaas Substrates ◽  
Movpe Growth

MOVPE growth of spontaneously ordered (GaIn) and (AlIn)P layers lattice matched to GaAs substrates

1997 ◽  
Vol 32 (1) ◽  
pp. 69-82 ◽  
Author(s):  
V. Gottschalch ◽  
R. Franzheld ◽  
I. Pietzonka ◽  
R. Schwabe ◽  
G. Benndorf ◽  
...  
Keyword(s):  
Gaas Substrates ◽  
Movpe Growth ◽  
Lattice Matched

Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (100) GaAs substrates

2010 ◽  
Vol 43 (1) ◽  
pp. 106-110 ◽  
Author(s):  
H. Ben Naceur ◽  
T. Mzoughi ◽  
I. Moussa ◽  
L. Nguyen ◽  
A. Rebey ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Surfactant Effect ◽  
Gaas Substrates ◽  
Movpe Growth

Metallorganic vapor phase epitaxy (MOVPE) growth of ZnSe1-xTex on (111) and (001) GaAs substrates

1994 ◽  
Author(s):  
Harald Stanzl ◽  
A. Rosenauer ◽  
Klaus H. Wolf ◽  
Marcus Kastner ◽  
Berthold Hahn ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Gaas Substrates ◽  
Movpe Growth

Orientation Effects on the Heteroepitaxial Growth of CdxHg1−xTe on to CdTe and GaAs

1986 ◽  
Vol 90 ◽  
Author(s):  
J Giess ◽  
J S Gough ◽  
S J C Irvine ◽  
J B Mullin ◽  
G W Blackmore
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Growth Conditions ◽  
Preferred Orientation ◽  
Heteroepitaxial Growth ◽  
Orientation Effects ◽  
Gaas Substrates ◽  
Movpe Growth ◽  
Buffer Composition

ABSTRACTFor MOVPE growth of CdTe on to (100) GaAs the orientation of the epitaxial layer is dependent on a combination of the growth conditions and substrate treatment prior to growth, (100) being the preferred orientation. (111) oriented CdTe layers can be grown on to (111) GaAs substrates. The effect of orientation on the choice of buffer composition, electrical properties and the extent of Ga diffusion from the substrate is discussed. Epitaxial CMT layers grown on to suitably buffered GaAs substrates are compared to similar layers grown on to CdTe substrates.

MOVPE growth and properties of P-I-N InGaAs/GaAs strained multi-quantum well structures on (111)A GaAs substrates

2000 ◽  
Vol 221 (1-4) ◽  
pp. 525-529 ◽  
Author(s):  
Jongseok Kim ◽  
Soohaeng Cho ◽  
Alfredo Sanz-Hervás ◽  
A. Majerfeld ◽  
B.W. Kim
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Gaas Substrates ◽  
Movpe Growth ◽  
Multi Quantum Well

MOVPE growth of InSb on GaAs substrates

1992 ◽  
Vol 124 (1-4) ◽  
pp. 363-370 ◽  
Author(s):  
R.M. Graham ◽  
N.J. Mason ◽  
P.J. Walker ◽  
D.M. Frigo ◽  
R.W. Gedridge
Keyword(s):  
Gaas Substrates ◽  
Movpe Growth

Direct MOVPE growth of InP on GaAs substrates

1988 ◽  
Vol 93 (1-4) ◽  
pp. 532-538 ◽  
Author(s):  
Akio Yoshikawa ◽  
Takashi Sugino ◽  
Akira Nakamura ◽  
Gota Kano ◽  
Iwao Teramoto
Keyword(s):  
Gaas Substrates ◽  
Movpe Growth

Studies of MOVPE growth conditions for the improvement of GaInAsN on GaAs substrates for 1.3μm laser emission

2003 ◽  
Vol 248 ◽  
pp. 446-450 ◽  
Author(s):  
E. Gouardes ◽  
F. Alexandre ◽  
O. Gauthier-Lafaye ◽  
A. Vuong-Becaert ◽  
V. Colson ◽  
...  
Keyword(s):  
Laser Emission ◽  
Growth Conditions ◽  
Gaas Substrates ◽  
Movpe Growth
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