Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates

2004 ◽  
Vol 132 (10) ◽  
pp. 707-711 ◽  
Author(s):  
L.F. Bian ◽  
D.S. Jiang ◽  
P.H. Tan ◽  
S.L. Lu ◽  
B.Q. Sun ◽  
...  
Keyword(s):  
Gaas Substrates ◽  
Lattice Matched

Tem Observation of defects in InGaAsP and InGaP Crystals on GaAs Substrates Grown by Liquid Phase Epitaxy

1983 ◽  
Vol 31 ◽  
Author(s):  
O. Ueda ◽  
S. Isozumi ◽  
S. Komiya ◽  
T. Kusunoki ◽  
I. Umebu
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Gaas Substrate ◽  
Stacking Faults ◽  
Dislocation Loops ◽  
Gaas Substrates ◽  
Modulated Structures ◽  
Lattice Matched

ABSTRACTDefects in InGaAsP and InGaP crystals lattice-matched to (001)-oriented GaAs substrate successfully grown by liquid phase epitaxy, have been investigated by TEM and STEM/EDX. Typical defects observed by TEM are composition-modulated structures, dislocation loops, non-structural microdefects, and stacking faults.

Growth of CuGaSe2Layers on Closely Lattice-Matched GaAs Substrates by Migration-Enhanced Epitaxy

2011 ◽  
Vol 50 (12R) ◽  
pp. 125502
Author(s):  
Miki Fujita ◽  
Atsushi Kawaharazuka ◽  
Jiro Nishinaga ◽  
Klaus H. Ploog ◽  
Yoshiji Horikoshi
Keyword(s):  
Gaas Substrates ◽  
Migration Enhanced Epitaxy ◽  
Lattice Matched

Strain-Induced Diffusion in Heteroepitaxially Grown CuInSe2 on GaAs Substrates

1995 ◽  
Vol 399 ◽  
Author(s):  
P. Fons ◽  
S. Niki ◽  
A. Yamada ◽  
A. Okada ◽  
D.J. Tweet
Keyword(s):  
Thin Film ◽  
Secondary Ion Mass Spectrometry ◽  
Second Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
State Of Stress ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTA series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

MOVPE growth of spontaneously ordered (GaIn) and (AlIn)P layers lattice matched to GaAs substrates

1997 ◽  
Vol 32 (1) ◽  
pp. 69-82 ◽  
Author(s):  
V. Gottschalch ◽  
R. Franzheld ◽  
I. Pietzonka ◽  
R. Schwabe ◽  
G. Benndorf ◽  
...  
Keyword(s):  
Gaas Substrates ◽  
Movpe Growth ◽  
Lattice Matched

Effects of substrate orientation on growth of epitaxial layers

1996 ◽  
Vol 54 ◽  
pp. 948-949
Author(s):  
Y. Hsu ◽  
T. S. Kuan ◽  
W. I. Wang
Keyword(s):  
Diffraction Pattern ◽  
High Order ◽  
Sharp Interface ◽  
Epitaxial Layers ◽  
Semiconductor Superlattices ◽  
Substrate Orientation ◽  
Perfect Lattice ◽  
Gaas Substrates ◽  
Different Temperatures ◽  
Lattice Matched

Semiconductor superlattices or epitaxial overlayers have so far been grown mostly on (100)-oriented substrates. It has long been suspected that growth on surfaces such as (m11) could produce equally good or better epitaxial layers. In this work, we have systematically tested the growth of multi- or single-layered structures, including the GaAs/AlAs, AlAs/Ge, and GaAs/Si systems, on surfaces of different orientations. The crystallinity and defect mechanisms in the layers grown on (100), (311), and (511) surfaces at different temperatures were compared. In most cases we found that (311) surfaces can produce epitaxial layers as good as on (100) surfaces.Perfect lattice-matched GaAs/AIAs superlattices were grown on (311)A-, (311)B-, and (100)-oriented GaAs substrates. Superlattices with good layer morphology were achieved on all three surfaces at 600°C. Fig. 1(a) shows an image of a typical GaAs/AIAs superlattice grown on a (311)B surface. This superlattice exhibits sharp interface abruptness as indicated by the high-order satellites observed in the diffraction pattern in Fig. 1(b).

MBE growth of high quality lattice-matched ZnSxSe1-x on GaAs substrates

1988 ◽  
Vol 86 (1-4) ◽  
pp. 311-317 ◽  
Author(s):  
Nobuo Matsumura ◽  
Mitsutaka Tsubokura ◽  
Junji Saraie ◽  
Yutaka Yodogawa
Keyword(s):  
High Quality ◽  
Mbe Growth ◽  
Gaas Substrates ◽  
Lattice Matched
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