Tem Observation of defects in InGaAsP and InGaP Crystals on GaAs Substrates Grown by Liquid Phase Epitaxy

1983 ◽  
Vol 31 ◽  
Author(s):  
O. Ueda ◽  
S. Isozumi ◽  
S. Komiya ◽  
T. Kusunoki ◽  
I. Umebu
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Gaas Substrate ◽  
Stacking Faults ◽  
Dislocation Loops ◽  
Gaas Substrates ◽  
Modulated Structures ◽  
Lattice Matched

ABSTRACTDefects in InGaAsP and InGaP crystals lattice-matched to (001)-oriented GaAs substrate successfully grown by liquid phase epitaxy, have been investigated by TEM and STEM/EDX. Typical defects observed by TEM are composition-modulated structures, dislocation loops, non-structural microdefects, and stacking faults.

Catastrophic degradation of InGaAsP/InGaP double‐heterostructure lasers grown on (001) GaAs substrates by liquid‐phase epitaxy

1985 ◽  
Vol 58 (11) ◽  
pp. 3996-4002 ◽  
Author(s):  
Osamu Ueda ◽  
Kiyohide Wakao ◽  
Satoshi Komiya ◽  
Akio Yamaguchi ◽  
Shoji Isozumi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Double Heterostructure ◽  
Gaas Substrates

TEM Investigation of Dislocation Loops in Undoped InGaAsP and InGaP Layers Grown by Liquid Phase Epitaxy

1984 ◽  
Vol 23 (Part 2, No. 6) ◽  
pp. L394-L396 ◽  
Author(s):  
Osamu Ueda ◽  
Satoshi Komiya ◽  
Shoji Isozumi
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Dislocation Loops

Liquid-Phase Epitaxy on Channeled (100) GaAs Substrates

1986 ◽  
Vol 21 (8) ◽  
pp. K146-K148
Author(s):  
G. Kühn ◽  
M. Lux ◽  
E. Nowak
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Gaas Substrates

Liquid phase epitaxy of pbtese lattice-matched to pbsnte

1981 ◽  
Vol 10 (5) ◽  
pp. 863-878 ◽  
Author(s):  
Dumrong Kasemset ◽  
Shlomo Rotter ◽  
Clifton G. Fonstad
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Lattice Matched

Epitaxial lateral overgrowth of InGaAs on patterned GaAs substrates by liquid phase epitaxy

1996 ◽  
Vol 169 (4) ◽  
pp. 613-620 ◽  
Author(s):  
Y. Hayakawa ◽  
S. Iida ◽  
T. Sakurai ◽  
H. Yanagida ◽  
M. Kikuzawa ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Gaas Substrates

On the Nanostructure of SiC

2010 ◽  
Vol 12 ◽  
pp. 99-104
Author(s):  
Maya Marinova ◽  
Efstathios K. Polychroniadis
Keyword(s):  
Silicon Carbide ◽  
Liquid Phase ◽  
Structural Properties ◽  
Liquid Phase Epitaxy ◽  
Stacking Faults ◽  
Growth Conditions ◽  
Small Energy ◽  
Long Period ◽  
Stacking Order

The present work deals with the structural properties of silicon carbide in nanoscale dimensions. The examined crystals were 6H-SiC grown by Liquid Phase Epitaxy. The study was concentrated on the stacking faults and any other differences from the “correct” stacking order of the Si-C bilayers for this polytype. Three main types of stacking faults were observed: (i) Cubic lamellae with thickness of four and two Si-C bilayers, always occurring in reverse stacking with respect to each other and separated by at least one unit cell of 6H-SiC; (ii) “twinned” 6H-SiC lamellae separated by a two-bilayer thick cubic inclusion. As a result the sequence in the “twinned” 6H-SiC changes from (3+3-) to (3-3+). (iii) Lamellae showing fringes, the interrelated distance of which suggests inclusion with sequence (22). Further, a high variety of sequences was found, leading to the appearance of rare long period polytypes or individual lamellae having their “own” stacking inside the 6H-SiC matrix. These nanostructured faults which deteriorate the quality of the grown material indicate also their “sensitivity” to any small or even infinitesimal change of the growth conditions, due to the very small energy among them.

Phase equilibria and liquid‐phase‐epitaxy growth of PbSnSeTe lattice‐matched to PbSe

1987 ◽  
Vol 62 (7) ◽  
pp. 2994-3000 ◽  
Author(s):  
Patrick J. McCann ◽  
Jacob Fuchs ◽  
Ze’ev Feit ◽  
Clifton G. Fonstad
Keyword(s):  
Liquid Phase ◽  
Phase Equilibria ◽  
Liquid Phase Epitaxy ◽  
Lattice Matched
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