Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (100) GaAs substrates

2010 ◽  
Vol 43 (1) ◽  
pp. 106-110 ◽  
Author(s):  
H. Ben Naceur ◽  
T. Mzoughi ◽  
I. Moussa ◽  
L. Nguyen ◽  
A. Rebey ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Surfactant Effect ◽  
Gaas Substrates ◽  
Movpe Growth

Instrumental aspects of atmospheric pressure MOVPE growth of InP and InP: GaInAsP heterostructures

1986 ◽  
Vol 77 (1-3) ◽  
pp. 340-346 ◽  
Author(s):  
A. Mircea ◽  
R. Mellet ◽  
B. Rose ◽  
P. Dasté ◽  
G. Schiavini
Keyword(s):  
Atmospheric Pressure ◽  
Movpe Growth

GaAs substrates for the MOVPE growth of (Hg,Cd)Te layers

1994 ◽  
Vol 3 (1-6) ◽  
pp. 239-245 ◽  
Author(s):  
R. Triboulet ◽  
A. Tromson-Carli ◽  
G. Patriarche ◽  
D. Lorans ◽  
T. Nguyen Duy
Keyword(s):  
Gaas Substrates ◽  
Movpe Growth

Status of IR detectors for high operating temperature produced by MOVPE growth of MCT on GaAs substrates

2012 ◽  
Author(s):  
P. Knowles ◽  
L. Hipwood ◽  
N. Shorrocks ◽  
I. M. Baker ◽  
L. Pillans ◽  
...  
Keyword(s):  
Operating Temperature ◽  
Ir Detectors ◽  
High Operating Temperature ◽  
Gaas Substrates ◽  
Movpe Growth

MOVPE Growth of lnSb on GaAs Substrates

2005 ◽  
Author(s):  
R.M. Graham ◽  
N.J. Mason ◽  
P.J. Walker ◽  
R.W. Gedridge
Keyword(s):  
Gaas Substrates ◽  
Movpe Growth

Influence of Growth Parameters on the Properties of InxGa1-xAs Grown on GaAs by OMVPE

1994 ◽  
Vol 340 ◽  
Author(s):  
E. Ernest Van Dyk ◽  
Andrew W. R. Leitch ◽  
Hendrik L. Ehlers
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Atmospheric Pressure ◽  
Growth Parameters ◽  
Gas Composition ◽  
Electrical And Optical Properties ◽  
Gaas Substrates

ABSTRACTInxGa1-xAs epilayers (x < 0.2) have been grown on GaAs substrates by atmospheric pressure OMVPE. The effects of varying the substrate temperature and the gas composition on the properties of the epilayers were investigated. The investigations have shown that higher mobilities were obtained at low growth temperatures (610°C), while optimum optical properties were obtained at higher growth temperatures (690°C). Variation of the AsH3 overpressure yielded optimum electrical and optical properties at a V/III ratio of 50. 77 K mobilities higher than 42 000 cm2/V.s and photoluminescence linewidths as low as 4.4 meV were obtained for x = 0.087 and x = 0.137 epilayers, respectively.

MOVPE growth of spontaneously ordered (GaIn) and (AlIn)P layers lattice matched to GaAs substrates

1997 ◽  
Vol 32 (1) ◽  
pp. 69-82 ◽  
Author(s):  
V. Gottschalch ◽  
R. Franzheld ◽  
I. Pietzonka ◽  
R. Schwabe ◽  
G. Benndorf ◽  
...  
Keyword(s):  
Gaas Substrates ◽  
Movpe Growth ◽  
Lattice Matched

Atmospheric pressure MOVPE growth of high performance polarisation insensitive strain compensated MQW InGaAsP/InGaAs optical amplifier

1995 ◽  
Vol 31 (15) ◽  
pp. 1242-1244 ◽  
Author(s):  
A. Ougazzaden ◽  
E.V.K. Rao ◽  
L. Silvestre ◽  
D. Sigogne ◽  
A. Ramdane ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
High Performance ◽  
Optical Amplifier ◽  
Movpe Growth

SURFACTANT EFFECT OF In ON THE MOVPE GROWTH OF Al- AND N-POLAR AlN

2016 ◽  
Vol 24 (06) ◽  
pp. 1750081
Author(s):  
QINQIN ZHUANG ◽  
JUNYONG KANG ◽  
SHUPING LI ◽  
WEI LIN
Keyword(s):  
Theoretical Calculations ◽  
Growth Conditions ◽  
X Ray ◽  
Force Microscopy ◽  
Surfactant Effect ◽  
Density Of Dislocations ◽  
Atomic Force ◽  
Surface Flatness ◽  
Movpe Growth

Al- and N-polar AlN have been grown by metalorganic vapor phase epitaxy (MOVPE) with the assistance of In dopant and characterized by in situ interferometry, ellipsometry, scanning electron microscopy, atomic force microscopy, and X-ray diffractometry. The growth of Al-polar AlN is faster with smoother surfaces than the N-polar ones, which is explained by theoretical calculations. The surfactant effect of In is confirmed by improving the growth rate and surface flatness without getting into the epilayer. Additionally, In is also favorable for reducing the density of dislocations and improving the crystalline quality, especially that of Al-polar AlN. The results suggest that using In surfactant to grow the Al-polar AlN epilayer leads to a better crystal quality under proper pre-growth treatments, low- and high-temperature AlN growth conditions.

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