Status of IR detectors for high operating temperature produced by MOVPE growth of MCT on GaAs substrates

Author(s):  
P. Knowles ◽  
L. Hipwood ◽  
N. Shorrocks ◽  
I. M. Baker ◽  
L. Pillans ◽  
...  
2018 ◽  
Vol 57 (12) ◽  
pp. 1
Author(s):  
Malgorzata Kopytko ◽  
Emilia Gomolka ◽  
Piotr Martyniuk ◽  
Pawel Madejczyk ◽  
Jaroslaw Rutkowski ◽  
...  

2019 ◽  
Vol 97 ◽  
pp. 116-122 ◽  
Author(s):  
Ł. Kubiszyn ◽  
K. Michalczewski ◽  
D. Benyahia ◽  
J. Jureńczyk ◽  
D. Stępień ◽  
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2010 ◽  
Author(s):  
David Billon-Lanfrey ◽  
Philippe Trinolet ◽  
Frédéric Pistone ◽  
Laurent Rubaldo ◽  
Hubert Huet

2010 ◽  
Author(s):  
A. G. U. Perera ◽  
S. G. Matsik ◽  
M. S. Shishodia ◽  
R. C. Jayasinghe ◽  
P. K. D. D. P. Pitigala

2015 ◽  
Vol 23 (4) ◽  
Author(s):  
P. Martyniuk ◽  
W. Gawron ◽  
D. Stępień ◽  
J. Pawluczyk ◽  
A. Kębłowski ◽  
...  

AbstractWe report on the status of long-wave infrared Auger suppressed HgCdTe multilayer structures grown on GaAs substrates designed for high operating temperature condition: 200-300 K exhibiting, detectivity -10


2014 ◽  
Author(s):  
H. Lutz ◽  
R. Breiter ◽  
H. Figgemeier ◽  
T. Schallenberg ◽  
W. Schirmacher ◽  
...  

2010 ◽  
Author(s):  
A. G. Unil Perera ◽  
S. G. Matsik ◽  
M. S. Shishodia ◽  
R. C. Jayasinghe

2018 ◽  
Vol 113 (2) ◽  
pp. 021101 ◽  
Author(s):  
David Z. Ting ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
Sir B. Rafol ◽  
Sam A. Keo ◽  
...  

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