Surface migration of group V atoms in GaAsP grown on GaAs channeled substrates by molecular beam epitaxy

2000 ◽  
Vol 18 (3) ◽  
pp. 1549 ◽  
Author(s):  
Y. Tatsuoka ◽  
H. Kamimoto ◽  
T. Kitada ◽  
S. Shimomura ◽  
S. Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group V ◽  
Surface Migration

scholarly journals Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 858-863
Author(s):  
Huajie Chen ◽  
A. R. Smith ◽  
R. M. Feenstra ◽  
D. W. Greve ◽  
J. E. Northrup
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Growth Parameters ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Group V ◽  
Group Iii ◽  
Ingan Alloys

InGaN alloys with indium compositions ranging from 0–40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate

2001 ◽  
Vol 227-228 ◽  
pp. 266-270 ◽  
Author(s):  
Yasuaki Tatsuoka ◽  
Masaya Uemura ◽  
Takahiro Kitada ◽  
Satoshi Shimomura ◽  
Satoshi Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Surface Migration

Study of As and P Incorporation Behavior in GaAsP by Gas-Source Molecular-Beam Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Ex Situ ◽  
Limited Growth ◽  
Group V ◽  
Group Iii ◽  
Gas Source ◽  
Simple Kinetic Model

ABSTRACTA simple kinetic model has been developed to explain the agreement between in situ and ex situ determination of phosphorus composition in GaAs1−xPx (x < 0.4) epilayers grown on GaAs (001) by gas-source molecular-beam epitaxy (GSMBE). The in situ determination is by monitoring the intensity oscillations of reflection high-energy-electron diffraction during group-V-limited growth, and the ex situ determination is by x-ray rocking curve measurement of GaAs1−xPx/GaAs strained-layer superlattices grown under group-III-limited growth condition.

A thermodynamic analysis of the growth of III–V compounds with two volatile group V elements by molecular-beam epitaxy

1998 ◽  
Vol 188 (1-4) ◽  
pp. 69-74 ◽  
Author(s):  
A.Yu Egorov ◽  
A.R Kovsh ◽  
V.M Ustinov ◽  
A.E Zhukov ◽  
P.S Kop'ev ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermodynamic Analysis ◽  
Molecular Beam ◽  
Group V

Reflection High-Energy-Electron Diffraction Study of Inp and InAs (100) In Gas-Source Molecular Beam Epitaxy

1990 ◽  
Vol 216 ◽  
Author(s):  
T. P. Chin ◽  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Electron Diffraction Study ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Group V ◽  
Precise Control ◽  
Gas Source

ABSTRACTInP and InAs (100) were grown by gas-source molecular-beam epitaxy (GSMBE) with arsine, phosphine, and elemental indium. Reflection high-energy-electron diffraction (RHEED) was used to monitor surface reconstructions and growth rates. (2×4) to (2×1) transition was observed on InP (100) as phosphine flow rate increased. (4×2) and (2×4) patterns were observed for In-stabilized and As-stabilized InAs surfaces, respectively. Both group-V and group-rn-induced RHEED oscillations were observed. The group-V surface desorption activation energy were measured to be 0.61 eV for InP and 0.19 eV for InAs. By this growth rate study, we are able to establish a precise control of V/HII atomic ratios in GSMBE of InP and InAs.

Effect of group V/III flux ratio on deep electron traps in AlxGa1−xAs (x=0.7) grown by molecular beam epitaxy

1986 ◽  
Vol 49 (13) ◽  
pp. 788-790 ◽  
Author(s):  
T. Hayakawa ◽  
M. Kondo ◽  
T. Suyama ◽  
K. Takahashi ◽  
S. Yamamoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Group V ◽  
Electron Traps
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