Effect of As4overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy

1989 ◽  
Vol 55 (10) ◽  
pp. 990-992 ◽  
Author(s):  
J. E. Palmer ◽  
G. Burns ◽  
C. G. Fonstad ◽  
C. V. Thompson
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Initial Growth

Initial growth mechanism of AlAs on Si(111) by molecular beam epitaxy

1991 ◽  
Vol 59 (23) ◽  
pp. 2983-2985 ◽  
Author(s):  
T. Kawai ◽  
H. Yonezu ◽  
Y. Yamauchi ◽  
Y. Takano ◽  
K. Pak
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Initial Growth

Study on initial growth process of Si on InP(100) substrate grown by molecular beam epitaxy

1993 ◽  
Vol 131 (3-4) ◽  
pp. 316-322 ◽  
Author(s):  
Hiroyuki Maruyama ◽  
Kangsa Pak ◽  
Kenji Sakakibara ◽  
Hiroo Yonezu ◽  
Yasushi Takano
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Process ◽  
Molecular Beam ◽  
Initial Growth

Germanium/gallium arsenide alloys grown by molecular‐beam epitaxy

1991 ◽  
Vol 69 (1) ◽  
pp. 226-236 ◽  
Author(s):  
R. J. Baird ◽  
H. Holloway ◽  
M. A. Tamor ◽  
M. D. Hurley ◽  
W. C. Vassell
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam
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