ChemInform Abstract: INFLUENCE OF SUBSTRATE TEMPERATURE ON THE MORPHOLOGY OF ALUMINUM GALLIUM ARSENIDE (ALXGA1-XAS) GROWN BY MOLECULAR BEAM EPITAXY

1982 ◽  
Vol 13 (30) ◽  
Author(s):  
H. MORKOC ◽  
T. J. DRUMMOND ◽  
W. KOPP ◽  
R. FISCHER
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Aluminum Gallium Arsenide ◽  
Molecular Beam ◽  
Influence Of Substrate

Influence of substrate temperature on incorporation of magnesium into Zn1-xMgxO layers growth by molecular beam epitaxy

2018 ◽  
Vol 766 ◽  
pp. 398-401
Author(s):  
D. Jarosz ◽  
H. Teisseyre ◽  
M. Stachowicz ◽  
A. Pieniążek ◽  
S. Kret ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Influence Of Substrate

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Effect of As4overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy

1989 ◽  
Vol 55 (10) ◽  
pp. 990-992 ◽  
Author(s):  
J. E. Palmer ◽  
G. Burns ◽  
C. G. Fonstad ◽  
C. V. Thompson
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Initial Growth
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