Effect of Group V/III Flux Ratio on Lightly Si‐Doped Al x Ga1 − x As Grown by Molecular Beam Epitaxy

1984 ◽  
Vol 131 (11) ◽  
pp. 2630-2633 ◽  
Author(s):  
Y. Nomura ◽  
M. Mannoh ◽  
M. Mihara ◽  
S. Naritsuka ◽  
K. Yamanaka ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Group V ◽  
Si Doped

Effect of group V/III flux ratio on deep electron traps in AlxGa1−xAs (x=0.7) grown by molecular beam epitaxy

1986 ◽  
Vol 49 (13) ◽  
pp. 788-790 ◽  
Author(s):  
T. Hayakawa ◽  
M. Kondo ◽  
T. Suyama ◽  
K. Takahashi ◽  
S. Yamamoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Group V ◽  
Electron Traps

Effect of group V/III flux ratio on the reliability of GaAs/Al0.3Ga0.7As laser diodes prepared by molecular beam epitaxy

1988 ◽  
Vol 52 (4) ◽  
pp. 252-254 ◽  
Author(s):  
T. Hayakawa ◽  
K. Takahashi ◽  
T. Suyama ◽  
M. Kondo ◽  
S. Yamamoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Flux Ratio ◽  
Group V

The effect of As/Ga flux ratio on Si-doped GaAs layers grown by molecular beam epitaxy

1994 ◽  
Vol 135 (3-4) ◽  
pp. 441-446 ◽  
Author(s):  
D.H. Zhang ◽  
K. Radhakrishnan ◽  
S.F. Yoon
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Si Doped

scholarly journals Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

2016 ◽  
Vol 24 (1) ◽  
Author(s):  
D. Benyahia ◽  
Ł. Kubiszyn ◽  
K. Michalczewski ◽  
A. Kębłowski ◽  
P. Martyniuk ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Flux Ratio ◽  
X Ray Diffraction ◽  
Group V

Non-intentionally doped GaSb epilayers were grown by molecular beam epitaxy (MBE) on highly mismatched semi-insulating GaAs substrate (001) with 2 offcut towards [110]. The effects of substrate temperature and the Sb/Ga flux ratio on the crystalline quality, surface morphology and electrical properties were investigated by Nomarski optical microscopy, X-ray diffraction (XRD) and Hall measurements, respectively. Besides, differential Hall was used to investigate the hole concentration behaviour along the GaSb epilayer. It is found that the crystal quality, electrical properties and surface morphology are markedly dependent on the growth temperature and the group V/III flux ratio. Under the optimized parameters, we demonstrate a low hole concentration at very low growth temperature. Unfortunately, the layers grown at low temperature are characterized by wide FWHM and low Hall mobility.

Traps in Si-doped AlxGa1-xN Grown by Molecular Beam Epitaxy on Sapphire Characterized by Deep Level Transient Spectroscopy

2006 ◽  
Vol 955 ◽  
Author(s):  
Mo Ahoujja ◽  
S Elhamri ◽  
M Hogsed ◽  
Y. K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Unknown Origin ◽  
Shallow Donor ◽  
Related Point ◽  
Line Defects ◽  
Si Doped ◽  
Transient Spectroscopy

ABSTRACTDeep levels in Si doped AlxGa1−xN samples, with Al mole fraction in the range of x = 0 to 0.30, grown by radio-frequency plasma activated molecular beam epitaxy on sapphire substrates were characterized by deep level transient spectroscopy (DLTS). DLTS measurements show two significant electron traps, P1 and P2, in AlGaN at all aluminum mole fractions. The electron trap, P2, appears to be a superposition of traps A and B , both of which are observed in GaN grown by various growth techniques and are thought to be related to VGa-shallow donor complexes. Trap P1 is related to line defects and N-related point defects. Both of these traps are distributed throughout the bulk of the epitaxial layer. An additional trap P0 which was observed in Al0.20Ga0.80N and Al0.30Ga0.70N is of unknown origin, but like P1 and P2, it exhibits dislocation-related capture kinetics. The activation energy measured from the conduction band of the defects is found to increase with Al mole content, a behavior consistent with other III-V semiconductors.

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