Metallorganic vapor phase epitaxy (MOVPE) growth of ZnSe1-xTex on (111) and (001) GaAs substrates

1994 ◽  
Author(s):  
Harald Stanzl ◽  
A. Rosenauer ◽  
Klaus H. Wolf ◽  
Marcus Kastner ◽  
Berthold Hahn ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Gaas Substrates ◽  
Movpe Growth

GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 6A) ◽  
pp. L755-L757 ◽  
Author(s):  
Xiong Zhang ◽  
Koichi Karaki ◽  
Hiroyuki Yaguchi ◽  
Kentaro Onabe ◽  
Yasuhiro Shiraki ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Gaas Substrates

Surface kinetics study of metal-organic vapor phase epitaxy of GaAs 1−y Bi y on offcut and mesa-patterned GaAs substrates

2017 ◽  
Vol 464 ◽  
pp. 39-48 ◽  
Author(s):  
Yingxin Guan ◽  
Kamran Forghani ◽  
Honghyuk Kim ◽  
Susan E. Babcock ◽  
Luke J. Mawst ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Kinetics Study ◽  
Surface Kinetics ◽  
Organic Vapor ◽  
Gaas Substrates ◽  
Metal Organic

Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 42 (Part 1, No. 8) ◽  
pp. 4913-4918 ◽  
Author(s):  
Chin-I Liao ◽  
Kao-Feng Yarn ◽  
Chien-Lien Lin ◽  
Yu-Lu Lin ◽  
Yeong-Her Wang
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Gaas Substrates ◽  
Direct Growth

Optical Investigations of Symmetry Breaking in GaInP2

1990 ◽  
Vol 198 ◽  
Author(s):  
A. Mascarenhas ◽  
Sarah Kurtz ◽  
A. Kibbler ◽  
J.M. Olsonsolar
Keyword(s):  
Band Structure ◽  
Symmetry Breaking ◽  
Experimental Evidence ◽  
Band Gap ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Spontaneous Breaking ◽  
Cubic Symmetry ◽  
Gaas Substrates ◽  
Present Experimental Evidence

ABSTRACTWe present experimental evidence for the spontaneous breaking of cubic symmetry in the band structure of films of Ga0 52 1n0 48P grown by organomeltallic vapor phase epitaxy on (100) GaAs substrates. We show how this effect is related to the spontaneous ordering of the alloy, and its correlation with the anomalous lowering of the band-gap observed in these films.

Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy

1998 ◽  
Vol 37 (Part 2, No. 5B) ◽  
pp. L568-L570 ◽  
Author(s):  
Harutoshi Tsuchiya ◽  
Kenji Sunaba ◽  
Masato Minami ◽  
Takashi Suemasu ◽  
Fumio Hasegawa
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Gaas Substrates ◽  
Cubic Gan
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