Orientation Effects on the Heteroepitaxial Growth of CdxHg1−xTe on to CdTe and GaAs

1986 ◽  
Vol 90 ◽  
Author(s):  
J Giess ◽  
J S Gough ◽  
S J C Irvine ◽  
J B Mullin ◽  
G W Blackmore
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Growth Conditions ◽  
Preferred Orientation ◽  
Heteroepitaxial Growth ◽  
Orientation Effects ◽  
Gaas Substrates ◽  
Movpe Growth ◽  
Buffer Composition

ABSTRACTFor MOVPE growth of CdTe on to (100) GaAs the orientation of the epitaxial layer is dependent on a combination of the growth conditions and substrate treatment prior to growth, (100) being the preferred orientation. (111) oriented CdTe layers can be grown on to (111) GaAs substrates. The effect of orientation on the choice of buffer composition, electrical properties and the extent of Ga diffusion from the substrate is discussed. Epitaxial CMT layers grown on to suitably buffered GaAs substrates are compared to similar layers grown on to CdTe substrates.

Studies of MOVPE growth conditions for the improvement of GaInAsN on GaAs substrates for 1.3μm laser emission

2003 ◽  
Vol 248 ◽  
pp. 446-450 ◽  
Author(s):  
E. Gouardes ◽  
F. Alexandre ◽  
O. Gauthier-Lafaye ◽  
A. Vuong-Becaert ◽  
V. Colson ◽  
...  
Keyword(s):  
Laser Emission ◽  
Growth Conditions ◽  
Gaas Substrates ◽  
Movpe Growth

SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

2007 ◽  
Vol 556-557 ◽  
pp. 153-156
Author(s):  
Chi Kwon Park ◽  
Gi Sub Lee ◽  
Ju Young Lee ◽  
Myung Ok Kyun ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Light Emission ◽  
Epitaxial Layers ◽  
Current Voltage ◽  
Space Technique ◽  
Sublimation Method ◽  
Device Applications ◽  
P Type ◽  
Surface Morphologies

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.

Temperature Dependent Quasi-Periodic Facetting of AlAs Grown by MBE on (100) GaAs Substrates

1993 ◽  
Vol 312 ◽  
Author(s):  
Richard Mirin ◽  
Mohan Krishnamurthy ◽  
James Ibbetson ◽  
Arthur Gossard ◽  
John English ◽  
...  
Keyword(s):  
Growth Conditions ◽  
High Energy ◽  
High Energy Electron ◽  
Temperature Dependent ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Atomic Force ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Facet Formation

AbstractHigh temperature (≥ 650°C) MBE growth of AlAs and AlAs/GaAs superlattices on (100) GaAs is shown to lead to quasi-periodic facetting. We demonstrate that the facetting is only due to the AlAs layers, and growth of GaAs on top of the facets replanarizes the surface. We show that the roughness between the AlAs and GaAs layers increases with increasing number of periods in the superlattice. The roughness increases to form distinct facets, which rapidly grow at the expense of the (100) surface. Within a few periods of the initial facet formation, the (100) surface has disappeared and only the facet planes are visible in cross-sectional transmission electron micrographs. At this point, the reflection high-energy electron diffraction pattern is spotty, and the specular spot is a distinct chevron. We also show that the facetting becomes more pronounced as the substrate temperature is increased from 620°C to 710°C. Atomic force micrographs show that the valleys enclosed by the facets can be several microns long, but they may also be only several nanometers long, depending on the growth conditions.

Effect of MOVPE growth conditions on AlN films on annealed sputtered AlN templates with nano-striped patterns

2021 ◽  
pp. 126237
Author(s):  
Yukino Iba ◽  
Kanako Shojiki ◽  
Shigeyuki Kuboya ◽  
Kenjiro Uesugi ◽  
Shiyu Xiao ◽  
...  
Keyword(s):  
Growth Conditions ◽  
Movpe Growth

scholarly journals Size Distribution, Mechanical and Electrical Properties of CuO Nanowires Grown by Modified Thermal Oxidation Methods

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1051 ◽  
Author(s):  
Raitis Sondors ◽  
Jelena Kosmaca ◽  
Gunta Kunakova ◽  
Liga Jasulaneca ◽  
Matiss Martins Ramma ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Aspect Ratio ◽  
Electric Field ◽  
Thermal Oxidation ◽  
Size Distribution ◽  
High Aspect Ratio ◽  
Growth Conditions ◽  
Cuo Nanowires ◽  
Young’S Moduli ◽  
Order Of Magnitude

Size distribution, Young’s moduli and electrical resistivity are investigated for CuO nanowires synthesized by different thermal oxidation methods. Oxidation in dry and wet air were applied for synthesis both with and without an external electrical field. An increased yield of high aspect ratio nanowires with diameters below 100 nm is achieved by combining applied electric field and growth conditions with additional water vapour at the first stage of synthesis. Young’s moduli determined from resonance and bending experiments show similar diameter dependencies and increase above 200 GPa for nanowires with diameters narrower than 50 nm. The nanowires synthesized by simple thermal oxidation possess electrical resistivities about one order of magnitude lower than the nanowires synthesized by electric field assisted approach in wet air. The high aspect ratio, mechanical strength and robust electrical properties suggest CuO nanowires as promising candidates for NEMS actuators.

Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth

2009 ◽  
Vol 615-617 ◽  
pp. 113-116 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Hajime Okumura ◽  
Kazuo Arai
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Flow Rate ◽  
Growth Conditions ◽  
Layer Surface ◽  
Specular Surface ◽  
Homoepitaxial Growth ◽  
Angle Difference ◽  
The Face

We have carried out detailed investigations on the influence of the growth conditions and the wafer off angle on the surface morphology of low off angle homoepitaxial growth. We found triangular features to be also serious problems on a 4 degree off 4H-SiC Si-face epitaxial layer surface. The control of the C/Si ratio by controlling the SiH4 flow rate is effective in suppressing the triangular features on 4 degree off Si-face homoepitaxial layer. As regards epitaxial growth on a vicinal off-axis substrate, the small off angle difference of a tenth part of a degree has an influence on the surface morphology of the epitaxial layer. This tendency depends on the face polarity and a C-face can be obtained that has a specular surface with a lower vicinal off angle than a Si-face. By controlling this off angle, a specular surface morphology without a bunched step structure could be obtained on a vicinal off angle 4H-SiC Si-face.

Fabrication and Electrical Properties of Highly Preferred Orientation Mo Thin Film by DC Magnetron Sputtering

2011 ◽  
Vol 40 (9) ◽  
pp. 1342-1345
Author(s):  
王震东 王震东 ◽  
赖珍荃 赖珍荃 ◽  
范定环 范定环 ◽  
徐鹏 徐鹏
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Preferred Orientation ◽  
Dc Magnetron Sputtering
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